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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD95N04

Name: STD95N04
Brand: STMicroelectronics
SKU: STD95N04
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD95N04

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD95N04.pdf

Description:: MOSFET N-CH 40V 80A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:5,226

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Product details

Overview

STD95N04 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET designed for high-current switching in power supplies, motor drives, and DC-DC converters. It features a 40 V drain-source breakdown voltage, 5.4 mΩ typical R_DS(on) at V_GS = 10 V, 80 A continuous drain current at T_C = 25°C, and 110 W total power dissipation - enabling efficient low-voltage, high-current operation in industrial and automotive power stages.

For engineers reviewing the STD95N04 datasheet, STD95N04 pinout, STD95N04 application, or STD95N04 equivalent, key selection considerations include its DPAK package thermal performance (R_thj-case = 1.36 °C/W), avalanche ruggedness (E_AS = 400 mJ), gate charge profile (Q_g = 40 nC), and compatibility with standard-threshold gate drive circuits.

Technical Context

This MOSFET employs ST's STripFET™ III process with Single Feature Size™ strip architecture, delivering high cell density and reduced alignment sensitivity for consistent on-resistance and robust safe operating area. Its design supports unclamped inductive switching with controlled diode recovery (t_rr = 45 ns, Q_rr = 60 nC) and fast switching (t_d(on) = 15 ns, t_f = 15 ns) under 4.7 Ω gate resistance.

The device integrates a built-in source-drain diode rated for 80 A continuous and 320 A pulsed conduction, with V_SD = 1.5 V at I_SD = 80 A and zero gate bias. Thermal design is enabled by its low junction-to-case resistance and ECOPACK® lead-free packaging compliant with JEDEC JESD97.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage before avalanche onset; suitable for 24 V and 36 V nominal bus systems.
R_DS(on)	5.4 mΩ (typ.) at V_GS = 10 V - Enables <1.7 W conduction loss at 80 A, reducing heatsink requirements.
I_D (cont)	80 A at T_C = 25°C - Supports high-current load switching without parallel devices in compact layouts.
E_AS	400 mJ (single-pulse) - Withstands energy transients in inductive loads without failure, critical for relay/motor drive protection.
Q_g	40 nC - Determines gate driver power requirement; enables efficient 100–500 kHz PWM operation with moderate drive strength.
t_r/t_f	50 ns / 15 ns - Fast edge rates reduce switching losses and EMI generation in hard-switched topologies.
R_thj-case	1.36 °C/W - Allows direct mounting to heatsinks for high-power operation without thermal interface material degradation concerns.

Pinout & Package

STD95N04 is housed in a surface-mount DPAK (TO-252) package with three terminals: Gate (G), Drain (D), and Source (S). The drain is connected to the exposed metal tab for low-inductance, high-current path and thermal conduction to the PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives 2–4 V threshold signal; requires ≤40 nC charge for full enhancement; sensitive to ESD (±200 nA leakage).
Drain (D)	High-side current output node	Connected to internal die backside and exposed tab; carries full load current and dissipates heat directly to PCB copper.
Source (S)	Reference node / return path	Common reference for gate drive and current sensing; forms low-impedance return path for 80 A continuous conduction.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse ruggedness up to 400 mJ - eliminates need for external snubbers in inductive switching.
Standard threshold drive	V_GS(th) = 2–4 V - compatible with 3.3 V and 5 V microcontrollers without level-shifting circuitry.
Low gate charge	Q_g = 40 nC - reduces gate driver power loss and enables higher-frequency operation with lower drive IC cost.
ECOPACK® lead-free packaging	Complies with JEDEC JESD97 marking and RoHS/REACH - supports environmentally compliant industrial and automotive manufacturing.

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Rectifier

Use Scenario: High-current BLDC motor phase leg in e-bike controllers or industrial actuators.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology; handles bidirectional freewheeling current via integrated body diode.

Use Value: 5.4 mΩ R_DS(on) minimizes I²R losses during 80 A peak phase current, extending battery runtime and reducing thermal stress.

Use Scenario: Secondary-side synchronous rectification in isolated 12 V → 5 V/3.3 V flyback or forward converters.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; driven by transformer-coupled or controller-synchronized gate signal.

Use Value: 1.5 V V_SD and low Q_rr enable >95% efficiency at 40 A output, outperforming 40 V Schottky diodes in thermal and conduction loss.

Automotive Load Switch

Industrial Power Supply OR-ing

Use Scenario: 24 V battery-powered load management in ADAS camera modules or infotainment subsystems.

IC Role / Device Role / Timing Role: High-side or low-side electronic fuse with overcurrent and short-circuit protection.

Use Value: Avalanche rating and 320 A pulsed ID capability support ISO 7637-2 pulse suppression without external TVS, simplifying BOM.

Use Scenario: Redundant 48 V input OR-ing in telecom rectifier shelves or server PSUs.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET for reverse current blocking and low-loss forward conduction.

Use Value: 40 V V_DSS and 5.4 mΩ R_DS(on) allow use in 36 V nominal systems with margin, while low Q_g ensures fast turn-on for fault isolation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404ZPBF	R_DS(on) = 4.7 mΩ (lower), but V_DSS = 40 V same; Q_g = 131 nC (higher); TO-220 package only	Higher gate drive power required; unsuitable for space-constrained DPAK layouts	Select when lowest conduction loss dominates and board space allows through-hole mounting.
STP95N04	Identical silicon die; differs only in TO-220 package, higher R_thj-amb (62.5 °C/W vs 50 °C/W for DPAK on PCB)	Requires larger heatsink for same power; not suitable for high-density SMT designs	Choose for prototyping or legacy through-hole assembly where thermal mass aids transient handling.

Compared with IRF1404ZPBF and STP95N04, STD95N04 delivers optimal balance of low R_DS(on), moderate Q_g, and DPAK thermal performance - making it preferred for high-efficiency, high-density SMT power stages where gate drive simplicity and PCB thermal management are critical.

Availability

STD95N04 is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and automotive load switches requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for STD95N04 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

STD95N04 belongs to ST's STripFET™ III Power MOSFET product line, engineered for high-current, low-voltage switching in space-constrained and thermally demanding applications such as motor control and power conversion.

FAQ

What is the maximum junction temperature for continuous operation?

The STD95N04 has a specified operating junction temperature range of –55°C to +175°C. For reliable continuous operation, junction temperature must remain below 175°C under worst-case thermal conditions - achievable with proper PCB copper area (≥1 in² 2 oz Cu) and ambient temperature control per its R_thj-pcb = 50 °C/W rating.

Does STD95N04 require a gate resistor for stability?

Yes - a gate resistor (typically 4.7 Ω, as used in characterization tests) is recommended to dampen gate ringing, limit peak gate current, and control switching speed. Without it, parasitic inductance may cause oscillation or overshoot, risking gate oxide damage or EMI compliance failure.

Can STD95N04 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (confirmed in Figure 10) enables current sharing across paralleled devices. However, matched layout symmetry, individual gate resistors, and Kelvin source connections are required to ensure balanced dynamic current distribution and avoid thermal runaway.

Is the body diode suitable for continuous freewheeling?

Yes - the integrated source-drain diode is rated for 80 A continuous forward current (I_SD) at T_C = 25°C and exhibits low V_SD = 1.5 V. Its reverse recovery characteristics (t_rr = 45 ns, Q_rr = 60 nC) support operation in hard-switched freewheeling paths up to ~200 kHz without excessive loss or voltage spikes.

STD95N04 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD95N04 FAQ

1.How can I place an order for STD95N04 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD95N04 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD95N04 reliable?

The price and inventory of STD95N04 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD95N04 is usually 5 days.

3.What payment methods are accepted for STD95N04?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD95N04 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD95N04?

STD95N04 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD95N04 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD95N04?

For technical support, including STD95N04 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD95N04 requirements.

6.How does Aetrix verify that STD95N04 is sourced from the original manufacturer or authorized distributors?

All STD95N04 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD95N04 meets industry standards.

7.What is the process for return or replacement of STD95N04?

All STD95N04 units undergo pre-shipment inspection (PSI). If there is an issue with STD95N04, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD95N04 part is unused and in its original packaging.

Return procedure for STD95N04:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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