STMicroelectronics STD95N2LH5
- Part No.:
- STD95N2LH5
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
STD95N2LH5.pdf
- Description:
- MOSFET N-CH 25V 80A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:3,013
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Product details
Overview
STD95N2LH5 from STMicroelectronics is an N-channel 25 V, 80 A Power MOSFET in DPAK package with RDS(on) ≤ 0.0045 Ω at VGS = 10 V and 40 A, optimized for high-efficiency switching in DC-DC converters and motor control stages. Its low gate charge (Qg = 13.4 nC) and high avalanche energy (EAS = 165 mJ) support robust hard-switching operation in automotive body electronics.
For engineers reviewing the STD95N2LH5 datasheet, STD95N2LH5 pinout, STD95N2LH5 application, or STD95N2LH5 equivalent, key selection criteria include on-resistance at 5 V gate drive (0.005–0.006 Ω), thermal resistance junction-to-case (2.14 °C/W), safe operating area limits, and DPAK tape-and-reel packaging compatibility with automated SMT assembly.
Technical Context
This STripFET™ V MOSFET uses trench-gate silicon technology to minimize conduction and switching losses simultaneously. Its RDS(on) × Qg figure of merit is benchmarked against industry standards for 25 V power switches, enabling high-frequency operation up to 500 kHz in synchronous buck converters.
The device features enhanced avalanche ruggedness (165 mJ single-pulse) and a gate threshold voltage of 1 V (min), supporting logic-level drive from 3.3 V and 5 V microcontrollers. Its source-drain diode exhibits trr = 32.4 ns and Qrr = 27.1 nC under 80 A, 20 V, 100 A/µs conditions - critical for minimizing commutation loss in half-bridge topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V maximum drain-source voltage - defines safe blocking capability in 12 V and 24 V automotive and industrial bus applications. |
| RDS(on) max | 0.0045 Ω at VGS = 10 V, ID = 40 A - enables <1.8 W conduction loss at 80 A continuous current with proper heatsinking. |
| ID cont | 80 A at TC = 25°C - supports high-current load switching without derating in compact PCB layouts with copper pour cooling. |
| Qg | 13.4 nC total gate charge - reduces gate driver power demand and allows use of low-cost 1-A peak drivers in 100–300 kHz SMPS designs. |
| EAS | 165 mJ single-pulse avalanche energy - ensures reliable operation during inductive turn-off transients in motor drives and solenoid controls. |
| Rthj-case | 2.14 °C/W - permits 33 W dissipation at ΔT = 70°C, matching standard DPAK thermal pads on 2 oz copper with 2-in² footprint. |
Pinout & Package
DPAK (TO-252) package: surface-mount, 3-terminal, single-die configuration with exposed drain pad for thermal and electrical connection. Standard JEDEC MO-238 outline, compatible with IPC-7351B footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Power return path and gate reference | Connected to PCB ground plane; carries full load current and defines local VGS reference for stable switching. |
| 2 (Gate) | Control input | High-impedance MOSFET gate requiring <13.4 nC charge; sensitive to ESD and layout-induced ringing without RC snubbing. |
| 3 (Drain) | Power input / high-side switch node | Exposed metal pad tied to internal die drain; must be soldered to large copper area for thermal and current handling. |
Key Features
| Feature | Design Value |
|---|---|
| STripFET™ V trench architecture | Enables sub-4.5 mΩ RDS(on) in DPAK while maintaining >160 mJ avalanche rating - eliminates need for parallel devices in 60–100 A systems. |
| Low Qg/RDS(on) ratio | 2.98 nC/mΩ - improves efficiency in high-frequency switching (>250 kHz) by reducing both switching and conduction loss components. |
| Logic-level gate threshold | VGS(th) = 1.0–2.5 V - ensures full enhancement with 3.3 V MCU GPIOs, eliminating level-shifter requirements in battery-powered controllers. |
| Enhanced SOA at TC = 100°C | 67 A continuous rating - maintains usable current capacity in sealed enclosures or high-ambient environments without forced air. |
Applications
| Automotive Body Control Module | Industrial DC Motor Driver |
|---|---|
Use Scenario: High-side load switching for headlights, fans, and window lifters in 12 V vehicle electrical systems. IC Role / Device Role / Timing Role: N-channel high-side switch controlled via gate driver IC; operates in on/off mode with <10 µs switching transitions. Use Value: 0.0045 Ω RDS(on) limits voltage drop to <360 mV at 80 A, reducing heat generation and enabling smaller heatsinks than alternatives. |
Use Scenario: Half-bridge leg in 24 V brushed DC motor H-bridge for factory automation actuators. IC Role / Device Role / Timing Role: Low-side switching element with fast turn-on (tr = 38 ns) and controlled fall time (tf = 7 ns) to minimize shoot-through risk. Use Value: 165 mJ avalanche energy withstands inductive kickback during PWM commutation without external clamping diodes. |
| Server VRM High-Current Phase | Telecom DC-DC Converter |
Use Scenario: Synchronous rectifier in multiphase 3.3 V/50 A CPU core supply with 500 kHz switching frequency. IC Role / Device Role / Timing Role: Bottom-FET in buck converter; driven by dedicated gate driver with 10 V gate bias and 4.7 Ω series resistor. Use Value: 13.4 nC Qg enables <1.3 W gate drive loss per phase at 500 kHz - critical for achieving >95% efficiency at full load. |
Use Scenario: Primary-side switch in isolated 48 V to 12 V telecom brick with active clamp forward topology. IC Role / Device Role / Timing Role: Main power switch subjected to unclamped inductive stress during reset; requires robust avalanche immunity. Use Value: 2.14 °C/W Rthj-case allows direct mounting to aluminum chassis, eliminating discrete heatsink and saving 12 mm² board area. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 25 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 4.0 mΩ (typ), Qg = 15.5 nC, TO-252 package, no specified EAS rating | Lacks documented avalanche ruggedness; unsuitable for inductive loads without external protection | Prefer STD95N2LH5 where unclamped inductive switching occurs (e.g., motor drives). |
| DMT6006LPS-13 | RDS(on) = 4.2 mΩ (max), Qg = 12.5 nC, DPAK, rated for 175°C Tj but lower ID (60 A) | Lower continuous current rating limits use in >60 A steady-state applications | Choose STD95N2LH5 when 80 A continuous current and 175°C operation are required. |
Compared with IRF7470PBF and DMT6006LPS-13, STD95N2LH5 uniquely combines 80 A current rating, 165 mJ avalanche energy, and 0.0045 Ω RDS(on) in DPAK - making it the only option qualified for high-reliability 24 V industrial motor control without derating or paralleling.
Availability
STD95N2LH5 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor drives, server VRMs, and telecom DC-DC converters requiring stable component supply across multi-year production cycles.
Supply support for STD95N2LH5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.
STD95N2LH5 belongs to ST's STripFET™ V Power MOSFET product line, engineered specifically for high-current, high-efficiency switching in 12–48 V systems where low RDS(on), fast switching, and avalanche robustness are co-critical.
FAQ
Is STD95N2LH5 suitable for 3.3 V logic-level gate drive?
Yes. With a gate threshold voltage (VGS(th)) of 1.0–2.5 V and guaranteed enhancement at VGS = 4.5 V, STD95N2LH5 fully turns on using 3.3 V microcontroller outputs. However, RDS(on) increases to 0.005–0.006 Ω at VGS = 5 V, so thermal design must account for ~15% higher conduction loss versus 10 V drive.
What is the maximum PCB copper area needed for thermal performance at 80 A?
For continuous 80 A operation at TC = 25°C, a minimum 200 mm² (20 mm × 10 mm) 2-oz copper pour connected to the exposed drain pad is required. This achieves the specified Rthj-case = 2.14 °C/W and limits junction temperature to 125°C with 70°C ambient rise.
Does STD95N2LH5 require a gate resistor for stability?
Yes. A 4.7 Ω series gate resistor is recommended per the datasheet switching test circuit (Figure 17) to dampen ringing caused by gate-drain capacitance (Crss = 67 pF) and PCB inductance. Omitting it risks oscillation above 100 MHz and unreliable turn-on/turn-off timing.
Can STD95N2LH5 replace STP95N2LH5 in existing TO-220 designs?
No. STD95N2LH5 is DPAK (surface-mount), while STP95N2LH5 is TO-220 (through-hole). They share identical electrical specs but differ in thermal path, mounting method, and PCB footprint. Direct replacement requires redesigning the layout, thermal pad, and assembly process - not a drop-in swap.
STD95N2LH5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ V
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.5mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13.4 nC @ 5 V
- Vgs (Max):
- ±22V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1817 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 70W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
STD95N2LH5 FAQ
1.How can I place an order for STD95N2LH5 through Aetrix?
Please submit a Request for Quotation (RFQ) for STD95N2LH5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STD95N2LH5 reliable?
The price and inventory of STD95N2LH5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD95N2LH5 is usually 5 days.
3.What payment methods are accepted for STD95N2LH5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD95N2LH5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STD95N2LH5?
STD95N2LH5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STD95N2LH5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STD95N2LH5?
For technical support, including STD95N2LH5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD95N2LH5 requirements.
6.How does Aetrix verify that STD95N2LH5 is sourced from the original manufacturer or authorized distributors?
All STD95N2LH5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD95N2LH5 meets industry standards.
7.What is the process for return or replacement of STD95N2LH5?
All STD95N2LH5 units undergo pre-shipment inspection (PSI). If there is an issue with STD95N2LH5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STD95N2LH5 part is unused and in its original packaging.
Return procedure for STD95N2LH5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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