STMicroelectronics STD95N4LF3
- Part No.:
- STD95N4LF3
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
STD95N4LF3.pdf
- Description:
- MOSFET N-CH 40V 80A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:5,174
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Product details
Overview
STD95N4LF3 from STMicroelectronics is an N-channel 40 V, 5.0 mΩ typ. logic-level Power MOSFET in DPAK (TO-252) package, rated for 80 A continuous drain current at TC = 25 °C and 110 W total power dissipation. It employs STripFET™ III technology for low RDS(on) and gate charge, enabling high-efficiency switching in automotive load control circuits.
For engineers reviewing the STD95N4LF3 datasheet, STD95N4LF3 pinout, STD95N4LF3 application, or STD95N4LF3 equivalent, key selection criteria include its 100% avalanche-tested ruggedness, 5.0 mΩ RDS(on) at VGS = 10 V, logic-level gate drive compatibility (VGS(th) = 1–2.5 V), and DPAK thermal resistance of 1.36 °C/W junction-to-case.
Technical Context
This MOSFET operates as a unidirectional high-current switch with integrated body diode, optimized for DC-DC conversion, motor control, and automotive solenoid/relay drivers. Its STripFET™ III process delivers low gate charge (Qg = 50 nC typ.) and fast switching (td(on) = 7.5 ns, tf = 11 ns), supporting high-frequency PWM operation up to 100 kHz.
The device features robust safe operating area (SOA) up to 320 A pulsed drain current and 400 mJ single-pulse avalanche energy. Thermal design is enabled by validated junction-to-PCB resistance (50 °C/W on 1 in² FR-4, 2 oz Cu) and explicit derating factor (0.73 W/°C above 25 °C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage for 12 V automotive systems with transient margin |
| RDS(on) max | 6.0 mΩ at VGS = 10 V - Ensures <1.2 W conduction loss at 80 A, critical for thermal management |
| ID cont | 80 A at TC = 25 °C - Supports high-power loads such as HVAC blowers and fuel pumps |
| Qg | 50 nC typ. - Enables efficient gate driving with low-power controllers and reduces switching losses |
| EAS | 400 mJ - Confirmed avalanche ruggedness for inductive load turn-off without snubbers |
| Rthj-case | 1.36 °C/W - Allows direct heatsinking via DPAK tab for compact thermal solutions |
| VGS(th) | 1–2.5 V - Fully enhanced with 3.3 V or 5 V logic-level microcontrollers |
Pinout & Package
The STD95N4LF3 uses a DPAK (TO-252) surface-mount package with exposed drain tab for thermal and electrical connection. The package measures 6.7 mm × 6.7 mm × 2.3 mm and complies with ECOPACK® environmental standards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal requiring ≤±16 V bias; low threshold enables direct MCU drive |
| 2 (D / TAB) | Drain / Exposed Pad | Main high-side current path and primary thermal interface; electrically connected to drain |
| 3 (S) | Source | Reference node for gate drive and current sensing; tied to ground or low-side return |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees 400 mJ single-pulse energy handling without degradation under inductive fault conditions |
| Logic-level gate drive | VGS(th) range (1–2.5 V) ensures full enhancement with standard 3.3 V/5 V digital outputs |
| STripFET™ III process | Reduces RDS(on) × Qg figure-of-merit to 300 mΩ·nC, improving efficiency in hard-switched topologies |
| Low RDS(on) temperature coefficient | RDS(on) increases only ~1.4× from 25 °C to 175 °C, supporting stable current sharing in parallel configurations |
Applications
| Automotive Body Control Module (BCM) | Engine Management System Load Driver |
|---|---|
Use Scenario: Controlling headlight relays, window lift motors, and door lock actuators in 12 V vehicle architectures. IC Role / Device Role: High-side load switch managing up to 80 A peak currents with integrated overcurrent protection via external sense resistor. Use Value: Eliminates need for discrete driver ICs and external flyback diodes due to rugged body diode and avalanche rating. | Use Scenario: Driving fuel injectors, idle air control valves, and EGR solenoids requiring precise PWM timing and high reliability. IC Role / Device Role: Low-loss switching element interfacing directly with engine control unit (ECU) GPIO pins. Use Value: Logic-level gate enables direct connection to 3.3 V microcontrollers; low Qg supports 10–20 kHz PWM without excessive gate drive loss. |
| Industrial DC Motor Starter | 12 V Telecom Power Distribution |
Use Scenario: Starting brushed DC motors in factory automation equipment where surge currents exceed 200 A during stall conditions. IC Role / Device Role: Robust main switch with SOA-rated pulsed current capability and thermal shutdown coordination via PCB copper area. Use Value: 320 A pulsed ID capability and 1.36 °C/W Rthj-case allow short-duration high-torque startup without thermal runaway. | Use Scenario: Hot-swap and load-sharing control in redundant 12 V telecom power shelves with strict inrush and fault response requirements. IC Role / Device Role: OR-ing FET or eFuse replacement with fast turn-off (tf = 11 ns) and controlled dv/dt (8 V/ns) to limit fault propagation. Use Value: Fast switching and low Coss (560 pF) minimize cross-conduction risk during dynamic load transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF3205PBF | RDS(on) = 8.0 mΩ @ 10 V; Qg = 71 nC; no avalanche rating specified | Lacks 100% avalanche testing and has higher conduction + switching losses | Acceptable for non-critical industrial loads where cost is prioritized over ruggedness |
| IXTH80N40L2 | RDS(on) = 5.5 mΩ @ 10 V; Qg = 105 nC; TO-247 package | Larger footprint, higher gate drive power required, but superior thermal performance (Rthj-case = 0.45 °C/W) | Preferred for >150 W continuous operation where board space allows TO-247 mounting |
Compared with IRF3205PBF and IXTH80N40L2, the STD95N4LF3 offers optimal balance of logic-level drive, DPAK compactness, and certified avalanche ruggedness-making it uniquely suited for space-constrained automotive modules requiring field-proven fault tolerance.
Availability
STD95N4LF3 is available at Aetrix Electronics and suitable for automotive body control, engine management, industrial motor control, and telecom power distribution requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for STD95N4LF3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power management technologies with vertical manufacturing capabilities.
The STD95N4LF3 belongs to ST's STripFET™ III Power MOSFET product line, engineered specifically for high-current, high-reliability switching in 12 V automotive systems where logic-level drive, avalanche immunity, and thermal efficiency are mandatory.
FAQ
Is the STD95N4LF3 suitable for high-frequency PWM applications?
Yes. With td(on) = 7.5 ns, tf = 11 ns, and Qg = 50 nC, the STD95N4LF3 supports PWM frequencies up to 100 kHz in buck converters and motor drives. Its low Ciss (2500 pF) and Crss (50 pF) minimize Miller effect, enabling clean gate control with standard 1–2 A drivers.
What is the maximum allowable junction temperature during continuous operation?
The absolute maximum junction temperature is 175 °C, and the device is characterized across –55 °C to 175 °C. For reliable continuous operation at 80 A, thermal design must maintain TJ ≤ 150 °C using the specified Rthj-case = 1.36 °C/W and appropriate heatsinking or PCB copper area.
Does the STD95N4LF3 require a gate resistor for stability?
A gate resistor (typically 4.7 Ω) is recommended to dampen ringing and control dv/dt during switching, especially in high-di/dt inductive loads. The datasheet specifies switching times and SOA curves using RG = 4.7 Ω, confirming its role in achieving specified performance and reliability.
Can the DPAK drain tab be used as both thermal and electrical connection?
Yes. The exposed drain tab (Pin 2) serves dual function: it provides the primary thermal path to the PCB copper pour or heatsink and is electrically connected to the drain terminal. Soldering the tab to a ≥1 in² 2 oz Cu pad achieves the stated Rthj-pcb = 50 °C/W and supports full 110 W power dissipation.
STD95N4LF3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ III
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 70 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2500 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
STD95N4LF3 FAQ
1.How can I place an order for STD95N4LF3 through Aetrix?
Please submit a Request for Quotation (RFQ) for STD95N4LF3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STD95N4LF3 reliable?
The price and inventory of STD95N4LF3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD95N4LF3 is usually 5 days.
3.What payment methods are accepted for STD95N4LF3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD95N4LF3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STD95N4LF3?
STD95N4LF3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STD95N4LF3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STD95N4LF3?
For technical support, including STD95N4LF3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD95N4LF3 requirements.
6.How does Aetrix verify that STD95N4LF3 is sourced from the original manufacturer or authorized distributors?
All STD95N4LF3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD95N4LF3 meets industry standards.
7.What is the process for return or replacement of STD95N4LF3?
All STD95N4LF3 units undergo pre-shipment inspection (PSI). If there is an issue with STD95N4LF3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STD95N4LF3 part is unused and in its original packaging.
Return procedure for STD95N4LF3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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