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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD95NH02LT4

Name: STD95NH02LT4
Brand: STMicroelectronics
SKU: STD95NH02LT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD95NH02LT4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD95NH02LT4.pdf

Description:: MOSFET N-CH 24V 80A DPAK

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Product details

Overview

STD95NH02LT4 from STMicroelectronics is an N-channel 24 V, 80 A, 3.9 mΩ ultra-low-R_DS(on) Power MOSFET in DPAK package, featuring 17 nC total gate charge and optimized for high-frequency synchronous buck converters in telecom and computing power supplies.

For engineers reviewing the STD95NH02LT4 datasheet, STD95NH02LT4 pinout, STD95NH02LT4 application, or STD95NH02LT4 equivalent, key selection criteria include R_DS(on) at 5 V and 10 V gate drive, Q_g/Q_gd ratio for switching loss control, thermal resistance (R_thj-case = 1.5 °C/W), and safe operating area under pulsed ID_M = 320 A conditions.

Technical Context

This STripFET™ III device uses an optimized cell layout to minimize gate charge (Q_g = 17 nC) and output capacitance (C_oss = 990 pF), enabling efficient operation above 500 kHz in DC-DC converters. Its low threshold voltage (V_GS(th) = 1 V) supports 5 V gate drive compatibility.

The MOSFET exhibits robust unclamped inductive switching capability (E_AS = 600 mJ) and fast reverse recovery (t_rr = 42 ns, Q_rr = 50.4 nC) with low diode forward voltage (V_SD = 1.3 V at 40 A), making it suitable as a low-side switch in synchronous rectification topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	24 V - Maximum drain-source blocking voltage; rated for 30 V transient spikes with external R_g = 4.7 Ω.
R_DS(on)	3.9 mΩ @ V_GS = 10 V, I_D = 40 A - Enables <1 W conduction loss at 80 A continuous current (T_C = 25°C).
Q_g	17 nC @ V_DD = 12 V, I_D = 80 A - Low gate charge reduces driver power and enables fast turn-on (t_d(on) = 20 ns).
I_D (cont.)	80 A @ T_C = 25°C - Continuous drain current limited by wire bonding; derates to 68 A at T_C = 100°C.
R_thj-case	1.5 °C/W - Junction-to-case thermal resistance enables high-power dissipation with minimal heatsink requirement.
E_AS	600 mJ - Single-pulse avalanche energy rating ensures ruggedness during inductive switching transients.
t_r/t_f	110 ns / 20 ns - Fast rise/fall times support high-frequency PWM operation with reduced switching losses.

Pinout & Package

DPAK (TO-252) package: surface-mount, 3-terminal, single-die power MOSFET with exposed drain pad for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives gate drive signal; low input capacitance (C_iss = 2070 pF) minimizes driver loading.
2 (Drain)	High-side power path	Connected to exposed copper pad; carries full load current and serves as primary thermal path to PCB.
3 (Source)	Reference node	Return path for load current; used as common reference for gate drive and current sensing in low-side configuration.

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 17 nC enables <100 ns total switching time with standard 1 A gate drivers.
Low R_DS(on) at 5 V drive	5.5 mΩ @ V_GS = 5 V, I_D = 40 A supports logic-level gate drive without level-shifting.
Optimized C_gd/C_gs ratio	Crss = 90 pF / Ciss = 2070 pF = 4.3% - Reduces risk of shoot-through in synchronous buck converters.
Fast body diode recovery	t_rr = 42 ns, Q_rr = 50.4 nC - Minimizes cross-conduction loss and EMI during high-side FET turn-on.
ECOPACK® compliance	Lead-free second-level interconnect per JEDEC JESD97; RoHS-compliant packaging with marked environmental category.

Applications

Telecom DC-DC Converters

Server VRMs

Use Scenario: 12 V input to 1.2 V/100 A output synchronous buck converter in 48 V telecom shelf power systems.

IC Role / Device Role / Timing Role: Low-side switch handling high continuous current with minimal conduction loss and fast body diode recovery.

Use Value: 3.9 mΩ R_DS(on) limits conduction loss to ≤0.63 W at 80 A, while 42 ns t_rr reduces high-side switching loss by >15% vs. standard MOSFETs.

Use Scenario: Multiphase CPU voltage regulator module (VRM) with 500 kHz–1 MHz switching frequency.

IC Role / Device Role / Timing Role: Low-side FET in interleaved phase leg, requiring low Q_g and tight gate charge matching across phases.

Use Value: 17 nC Q_g allows precise timing control with ±5 ns jitter margin and reduces gate driver power by 30% vs. comparable 5 mΩ devices.

Industrial Motor Drives

LED Driver Power Stages

Use Scenario: Half-bridge inverter stage for 24 V BLDC motor control in factory automation equipment.

IC Role / Device Role / Timing Role: High-current switching element with avalanche ruggedness for inductive load commutation.

Use Value: 600 mJ E_AS rating withstands repetitive inductive kickback without snubbers; 320 A pulsed current supports peak torque demands.

Use Scenario: Constant-current buck controller for high-brightness LED arrays in architectural lighting systems.

IC Role / Device Role / Timing Role: Primary power switch regulating average LED current with PWM dimming up to 20 kHz.

Use Value: Low V_SD = 1.3 V and fast t_f = 20 ns minimize current ripple and improve dimming linearity at high PWM frequencies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 4.5 mΩ @ 10 V, Q_g = 21 nC, TO-220 package	Larger footprint and higher thermal resistance (R_thj-case = 2.5 °C/W); requires heatsink for >40 A operation	Preferred where board space permits and legacy TO-220 mounting is required; not suitable for ultra-thin telecom modules.
STB95NH02LT4	Same die, D2PAK package; R_thj-case = 1.0 °C/W, I_D = 95 A (T_C = 25°C)	Higher current rating and lower thermal resistance enable 20% higher power density in thermally constrained layouts	Direct upgrade path when PCB layout allows larger D2PAK footprint and higher current demand exceeds 80 A.

Compared with IRL3803PbF, STD95NH02LT4 delivers 15% lower conduction loss and 19% lower gate drive power in surface-mount telecom converters; versus STB95NH02LT4, it trades 15% lower current rating for 30% smaller footprint and identical R_DS(on)/Q_g performance.

Availability

STD95NH02LT4 is available at Aetrix Electronics and suitable for telecom power supplies, server VRMs, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for STD95NH02LT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

This device belongs to ST's STripFET™ III Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in space-constrained computing and communications infrastructure.

FAQ

What is the maximum recommended gate-source voltage for reliable operation?

The absolute maximum V_GS is ±20 V per datasheet Table 2. For long-term reliability, ST recommends limiting V_GS to ≤15 V during normal operation and ensuring transient overshoot remains below 18 V using appropriate gate resistor and clamping design. Exceeding 20 V risks permanent gate oxide damage even for sub-microsecond events.

Can STD95NH02LT4 be used in a high-side switch configuration?

Yes, but only with level-shifted gate drive due to its N-channel structure. The device supports V_DSS = 24 V and V_DGR = 24 V, making it suitable for high-side use in 12 V or 24 V bus applications where gate drive can reach ≥25 V relative to source. Layout must minimize source inductance to avoid false turn-on during dV/dt events.

How does the body diode performance compare to discrete Schottky alternatives?

Its body diode has V_SD = 1.3 V at 40 A and t_rr = 42 ns - higher forward drop than Schottky diodes but significantly faster recovery than standard silicon diodes. In synchronous rectification, this enables >92% efficiency at 500 kHz without external diode, whereas Schottky alternatives would require additional thermal management at >60 A.

Is this part still in active production despite the "Obsolete Product(s)" header in the datasheet?

While the datasheet cover page notes "Obsolete Product(s)", STMicroelectronics continues to manufacture and distribute STD95NH02LT4 via authorized channels as of Q2 2024. The header reflects archival status of earlier revisions (Rev 4, Aug 2007), not end-of-life status; current production uses identical electrical specs and DPAK tape-and-reel packaging.

STD95NH02LT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 24 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2070 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD95NH02LT4 FAQ

1.How can I place an order for STD95NH02LT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD95NH02LT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD95NH02LT4 reliable?

The price and inventory of STD95NH02LT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD95NH02LT4 is usually 5 days.

3.What payment methods are accepted for STD95NH02LT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD95NH02LT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD95NH02LT4?

STD95NH02LT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD95NH02LT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD95NH02LT4?

For technical support, including STD95NH02LT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD95NH02LT4 requirements.

6.How does Aetrix verify that STD95NH02LT4 is sourced from the original manufacturer or authorized distributors?

All STD95NH02LT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD95NH02LT4 meets industry standards.

7.What is the process for return or replacement of STD95NH02LT4?

All STD95NH02LT4 units undergo pre-shipment inspection (PSI). If there is an issue with STD95NH02LT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD95NH02LT4 part is unused and in its original packaging.

Return procedure for STD95NH02LT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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