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STMicroelectronics STD9N40M2

Part No.:
STD9N40M2
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixSTD9N40M2.pdf
Description:
MOSFET N-CH 400V 6A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,019

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Product details

Overview

STD9N40M2 from STMicroelectronics is an N-channel 400 V, 0.59 Ω typ. (0.8 Ω max), 6 A MDmesh™ M2 Power MOSFET in DPAK (TO-252) package, optimized for high-efficiency flyback and PFC converters operating up to 150 °C junction temperature with 100% avalanche testing and Zener gate protection.

For engineers reviewing the STD9N40M2 datasheet, STD9N40M2 pinout, STD9N40M2 application, or STD9N40M2 equivalent, this device's low Qg (8.8 nC), low Coss eq. (94 pF), rugged dv/dt capability (50 V/ns), and integrated source-drain diode with 208 ns trr at 25 °C are critical for hard-switched SMPS design validation.

Technical Context

This MOSFET employs ST's MDmesh™ M2 strip-based vertical structure to achieve low RDS(on) while maintaining high voltage blocking (400 V V(BR)DSS) and excellent switching trade-offs. Its gate threshold voltage (2–4 V) ensures compatibility with standard 10 V gate drivers, and its 150 °C max Tj rating supports compact thermal designs.

The device features a Zener-protected gate, 100% unclamped inductive switching (UIS) tested to 2.5 A/148 mJ, and a source-drain diode with 1.6 V forward drop at 6 A - enabling self-commutated operation in quasi-resonant topologies without external freewheeling diodes.

Key Specifications

Parameter Value and Actual Design Meaning
V(BR)DSS 400 V - guarantees reliable blocking in 380 VAC input PFC stages with margin against line surges
RDS(on) max 0.8 Ω @ VGS = 10 V, ID = 3 A - enables <1.8 W conduction loss at 6 A continuous drain current
Qg 8.8 nC - reduces gate drive power and allows use of low-power controllers like L6562A
Coss eq. 94 pF @ 0–320 V - minimizes turn-off energy loss and improves light-load efficiency in flyback converters
dv/dt ruggedness 50 V/ns - sustains fast voltage transients during hard switching without spurious turn-on
EAS 148 mJ @ Tj = 25 °C - provides robustness against inductive energy spikes in offline SMPS
trr 208 ns @ ISD = 6 A, di/dt = 100 A/µs - limits reverse recovery loss and EMI in discontinuous conduction mode

Pinout & Package

DPAK (TO-252) package with exposed drain tab (Pin 2) for enhanced thermal dissipation; thermally efficient layout compatible with 1-inch² FR-4 PCB (Rthj-pcb = 50 °C/W).

Pin/Terminal Circuit Role Design Meaning
Pin 1 (G) Gate Control terminal accepting 0–10 V logic-level signals; Zener-protected to ±25 V
Pin 2 (D) Drain Main high-side switching node; electrically connected to exposed metal tab for heatsinking
Pin 3 (S) Source Power return path and reference for gate drive; forms cathode of integrated body diode

Key Features

Feature Design Value
MDmesh™ M2 technology Enables 0.59 Ω RDS(on) at 400 V rating - 30% lower on-resistance than prior-generation DPAK MOSFETs
Low Coss profile 94 pF equivalent output capacitance - reduces turn-off switching loss by >40% vs. comparable 400 V devices
100% UIS tested Validated to 2.5 A repetitive avalanche current - eliminates need for external snubbers in cost-sensitive adapters
Zener gate protection Integrated ±25 V clamp - prevents gate oxide damage during layout parasitic coupling or hot-plug events
Optimized body diode 208 ns trr and 11.5 A IRRM - supports quasi-resonant operation without external diode in 65 W+ chargers

Applications

AC-DC Adapters LED Driver Power Stages

Use Scenario: 65 W universal-input flyback converter for laptop adapters.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer into transformer.

Use Value: Low Qg and Coss eq. enable >90% efficiency at 230 VAC full load while meeting EN55022 Class B EMI limits.

Use Scenario: Isolated buck-boost LED driver for street lighting (30–120 V output).

IC Role / Device Role / Timing Role: Main switching element in primary-side regulated topology with integrated current sensing.

Use Value: 150 °C Tj rating and 100% avalanche test allow derating-free operation in sealed outdoor enclosures.

PFC Pre-regulators Industrial SMPS

Use Scenario: Continuous conduction mode (CCM) boost PFC stage in 300 W server PSU.

IC Role / Device Role / Timing Role: High-side switch synchronizing with AC line zero-crossing for sinusoidal input current shaping.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during high di/dt transitions in boost diode recovery.

Use Scenario: Auxiliary 24 V/5 A standby supply in programmable logic controller (PLC) power system.

IC Role / Device Role / Timing Role: Primary-side switch in self-oscillating flyback delivering isolated bias rails.

Use Value: Integrated Zener gate protection and -55 °C to 150 °C operating range ensure reliability across industrial ambient extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP9NK40Z 400 V, 0.85 Ω max, 9 A, TO-220 package; higher RDS(on), no Zener gate protection Larger footprint and higher thermal resistance (Rthj-case = 1.5 °C/W) limit use in space-constrained designs Prefer when board-level heatsinking is available and gate drive robustness is less critical
FQP4N40 400 V, 1.6 Ω max, 4 A, TO-220; no avalanche rating, no Coss optimization Higher switching losses and untested UIS performance restrict use to low-frequency (<65 kHz), non-critical applications Select only for legacy cost-sensitive designs where efficiency and ruggedness are secondary

Compared with STP9NK40Z and FQP4N40, STD9N40M2 delivers superior efficiency via lower Qg and Coss, guaranteed avalanche robustness for field reliability, and DPAK thermal integration - making it optimal for modern compact, high-density SMPS.

Availability

STD9N40M2 is available at Aetrix Electronics and suitable for AC-DC adapters, LED driver power stages, and PFC pre-regulators requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for STD9N40M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STD9N40M2 belongs to ST's MDmesh™ M2 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline SMPS in space- and thermal-constrained applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD9N40M2 supports 3.8 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS10114 Rev 3. This derating reflects thermal limitations of the DPAK package and must be applied in thermal design calculations using Rthj-case = 2.08 °C/W.

Does this MOSFET include integrated gate protection?

Yes - STD9N40M2 integrates a Zener diode between gate and source, rated for ±25 V, providing overvoltage protection against ESD and layout-induced transients. This is explicitly stated in the "Features" section and confirmed in Table 4 (IGSS specification).

Can STD9N40M2 replace older 400 V MOSFETs in existing designs?

Direct replacement is feasible only if the original part shares identical DPAK pinout, gate threshold (2–4 V), and thermal interface. STD9N40M2's lower RDS(on) and Qg may require gate resistor adjustment to control dV/dt and prevent oscillation in legacy layouts.

What is the typical reverse recovery time of the body diode?

The body diode's typical reverse recovery time (trr) is 208 ns under conditions of ISD = 6 A, di/dt = 100 A/µs, and VDD = 60 V at Tj = 25 °C, per Table 7 in DS10114 Rev 3. At 150 °C, trr increases to 264 ns due to carrier lifetime effects.

STD9N40M2 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
MDmesh™ II Plus
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
400 V
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
800mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
8.8 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
270 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
60W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

STD9N40M2 FAQ

1.How can I place an order for STD9N40M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD9N40M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD9N40M2 reliable?

The price and inventory of STD9N40M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD9N40M2 is usually 5 days.

3.What payment methods are accepted for STD9N40M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD9N40M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD9N40M2?

STD9N40M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD9N40M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD9N40M2?

For technical support, including STD9N40M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD9N40M2 requirements.

6.How does Aetrix verify that STD9N40M2 is sourced from the original manufacturer or authorized distributors?

All STD9N40M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD9N40M2 meets industry standards.

7.What is the process for return or replacement of STD9N40M2?

All STD9N40M2 units undergo pre-shipment inspection (PSI). If there is an issue with STD9N40M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD9N40M2 part is unused and in its original packaging.

Return procedure for STD9N40M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STD9N40M2 Tags

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