STMicroelectronics STD9NM40N
- Part No.:
- STD9NM40N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
STD9NM40N.pdf
- Description:
- MOSFET N-CH 400V 5.6A DPAK
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
STD9NM40N from STMicroelectronics is an N-channel 400 V, 5.6 A MDmesh™ II Power MOSFET in DPAK (TO-252) package with typ. RDS(on) = 0.73 Ω, Qg = 14 nC, and 100% avalanche tested - designed for high-efficiency AC-DC flyback and PFC stages in industrial power supplies.
For engineers reviewing the STD9NM40N datasheet, STD9NM40N pinout, STD9NM40N application, or STD9NM40N equivalent, key selection criteria include its low gate charge for fast switching, robust 140 mJ single-pulse avalanche energy, and thermal resistance of 2.08 °C/W (junction-to-case), critical for compact convection-cooled designs.
Technical Context
This device employs ST's second-generation MDmesh™ vertical strip architecture to minimize both on-resistance and gate charge simultaneously. Its 400 V VDS rating and 150 °C max junction temperature support operation in universal-input offline converters.
The MOSFET features a fast, soft-recovery body diode (trr = 187 ns at Tj = 25 °C) and low Coss(eq) = 147.5 pF, enabling high-frequency ZVS/ZCS topologies. Gate threshold voltage is tightly specified (2–4 V), ensuring reliable turn-on with standard 10 V gate drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 400 V - supports 380 V DC bus with 5% margin; suitable for 230 VAC mains-fed SMPS |
| RDS(on) typ. | 0.73 Ω @ VGS = 10 V, ID = 2.5 A - enables <1.1 W conduction loss at 5.6 A continuous drain current |
| Qg | 14 nC - reduces gate drive power and allows use of low-current drivers (e.g., 100 mA peak) |
| EAS | 140 mJ - withstands unclamped inductive switching events without failure in PFC boost chokes |
| Rthj-case | 2.08 °C/W - permits 28.8 W dissipation at ΔT = 60 °C with minimal heatsink in DPAK form factor |
| tr/tf | 7 ns / 8.8 ns @ RG = 4.7 Ω - supports >500 kHz switching with low overlap loss |
Pinout & Package
DPAK (TO-252) package: surface-mount, 3-lead, exposed drain pad for thermal and electrical connection. Standard pin assignment per JEDEC TO-252 outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Power source terminal for load return path | Low-inductance connection point; ties directly to PCB ground plane for EMI control |
| 2 (Gate) | Control input for MOSFET channel modulation | High-impedance node requiring <5.4 Ω intrinsic gate resistance; sensitive to layout parasitics |
| 3 (Drain) | Main high-side power output terminal | Exposed copper pad (Tab); electrically and thermally connected to drain - must be routed to HV net and heatsink |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees ruggedness against inductive kickback in boost/flyback snubbers without external clamping |
| Low Ciss/Coss | 365 pF / 147.5 pF enables stable high-frequency operation with minimal capacitive loading on gate driver |
| MDmesh™ II architecture | Combines vertical conduction with optimized strip layout to achieve best-in-class RDS(on) × Qg figure-of-merit (0.0103 Ω·nC) |
| Soft-recovery body diode | trr = 187 ns, Qrr = 1.3 µC - reduces switching noise and EMI vs. standard silicon diodes in synchronous rectification |
Applications
| Industrial AC-DC Adapters | Server PSU Primary Switch |
|---|---|
|
Use Scenario: 200–300 W universal-input offline flyback converter for factory automation controllers. IC Role / Device Role / Timing Role: Main power switch operating at 65–100 kHz with quasi-resonant control. Use Value: Low Qg and RDS(on) reduce total losses by ≥12% vs. legacy 600 V MOSFETs, improving efficiency from 87% to 89.5% at full load. |
Use Scenario: High-density 1 kW server front-end with active clamp forward topology. IC Role / Device Role / Timing Role: Primary-side switching element handling 400 V DC bus and 5.6 A RMS current. Use Value: 140 mJ EAS eliminates need for external RCD clamp, reducing BOM count and board area by 18 mm². |
| PFC Boost Converter | LED Driver Primary Switch |
|
Use Scenario: Two-stage 150 W LED streetlight driver with interleaved boost PFC stage. IC Role / Device Role / Timing Role: Fast-switching boost switch operating at 100 kHz with average current mode control. Use Value: Soft-recovery diode minimizes reverse recovery spikes, cutting EMI filter size by 30% and passing CISPR-15 Class B without shielding. |
Use Scenario: Isolated 60 W constant-current LED driver for outdoor signage with wide ambient range (−40 °C to +85 °C). IC Role / Device Role / Timing Role: Primary-side switch in flyback topology with primary-side regulation. Use Value: Stable VGS(th) (2–4 V) and RDS(on) drift <15% over −40 °C to 125 °C ensures consistent dimming linearity across temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 400 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP9NM40N | Same die, TO-220 package; Rthj-case = 2.08 °C/W identical, but larger footprint and through-hole mounting | Preferred for prototyping, lower-volume industrial controls where manual assembly and heatsink bolt-down are acceptable | Select when mechanical robustness and serviceability outweigh PCB space constraints. |
| IPP60R099C6 | 650 V rating, 0.099 Ω RDS(on), higher Qg = 44 nC, CoolMOS™ C6 technology | Better suited for 380–400 V DC bus with tighter RDS(on) tolerance, but requires stronger gate driver and yields higher switching loss above 200 kHz | Choose only if system requires >600 V breakdown margin or sub-0.1 Ω on-resistance at cost of increased drive complexity. |
Compared with STP9NM40N, STD9NM40N offers identical electrical performance in a smaller, surface-mount DPAK package - ideal for automated production and high-density layouts. Versus IPP60R099C6, it trades higher voltage headroom for significantly lower gate charge and proven avalanche ruggedness in 400 V applications.
Availability
STD9NM40N is available at Aetrix Electronics and suitable for industrial AC-DC adapters, server PSU primary switches, and PFC boost converters requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.
Supply support for STD9NM40N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog/mixed-signal ICs for industrial, automotive, and consumer markets.
STD9NM40N belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline SMPS, PFC, and lighting applications where low RDS(on) × Qg is critical.
FAQ
Is STD9NM40N suitable for hard-switched 200 kHz flyback designs?
Yes - its 7 ns rise time and 8.8 ns fall time at RG = 4.7 Ω, combined with low Coss(eq) = 147.5 pF, enable efficient hard-switching up to 250 kHz. Thermal design must account for increased switching loss; derate ID to 4.3 A at TC = 100 °C per datasheet Table 2.
What is the maximum recommended gate resistor for reliable turn-on?
A gate resistor ≤ 10 Ω is recommended to ensure full enhancement within 20 ns while limiting peak gate current to <1 A. ST's evaluation boards use 4.7 Ω (Table 7 test condition); values >15 Ω risk incomplete turn-on during fast transients and increase switching loss.
Does the body diode support synchronous rectification in LLC resonant converters?
No - the body diode is not optimized for synchronous rectification. While trr = 187 ns is relatively soft, its Qrr = 1.3 µC and VSD = 1.5 V at 5.6 A result in higher conduction and recovery loss than dedicated SR controllers with GaN or logic-level MOSFETs.
Can STD9NM40N replace STP9NM40N in existing TO-220 PCB layouts?
No - STD9NM40N uses DPAK (TO-252) footprint, which is incompatible with TO-220 land patterns. Pad dimensions, lead pitch (2.28 mm vs. 2.54 mm), and thermal pad geometry differ fundamentally. A PCB redesign is required for surface-mount implementation.
STD9NM40N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 790mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 365 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 60W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
STD9NM40N FAQ
1.How can I place an order for STD9NM40N through Aetrix?
Please submit a Request for Quotation (RFQ) for STD9NM40N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STD9NM40N reliable?
The price and inventory of STD9NM40N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD9NM40N is usually 5 days.
3.What payment methods are accepted for STD9NM40N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD9NM40N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STD9NM40N?
STD9NM40N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STD9NM40N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STD9NM40N?
For technical support, including STD9NM40N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD9NM40N requirements.
6.How does Aetrix verify that STD9NM40N is sourced from the original manufacturer or authorized distributors?
All STD9NM40N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD9NM40N meets industry standards.
7.What is the process for return or replacement of STD9NM40N?
All STD9NM40N units undergo pre-shipment inspection (PSI). If there is an issue with STD9NM40N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STD9NM40N part is unused and in its original packaging.
Return procedure for STD9NM40N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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