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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD9NM50N

Name: STD9NM50N
Brand: STMicroelectronics
SKU: STD9NM50N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD9NM50N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD9NM50N.pdf

Description:: MOSFET N-CH 500V 5A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STD9NM50N from STMicroelectronics is an AEC-Q101 qualified N-channel 500 V, 730 mΩ typ. (790 mΩ max), 5 A continuous drain current Power MOSFET in DPAK (TO-252) package, featuring 14 nC total gate charge and 364 pF input capacitance. It employs MDmesh™ II vertical strip architecture for high-efficiency switching in automotive and industrial DC-DC converters.

For engineers reviewing the STD9NM50N datasheet, STD9NM50N pinout, STD9NM50N application, or STD9NM50N equivalent, key selection criteria include avalanche ruggedness (140 mJ EAS), low R_DS(on) temperature coefficient, 15 V/ns dv/dt immunity, and integrated source-drain diode with 187 ns trr at TJ = 25 °C.

Technical Context

This MOSFET uses ST's second-generation MDmesh™ technology, combining a vertical drift region with optimized strip layout to minimize conduction and switching losses simultaneously. Its low C_iss/C_oss ratio (364 pF / 33 pF) and 5.4 Ω intrinsic gate resistance support fast, controllable turn-on/turn-off transitions under hard-switching conditions.

The device integrates a robust body diode rated for 5 A continuous and 20 A pulsed source-drain current, with reverse recovery charge of 1.3 µC at 25 °C and 1.5 µC at 150 °C. Its 2.78 °C/W junction-to-case thermal resistance enables high-power operation when mounted on PCB copper areas per JEDEC standards.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports 400 V bus designs with 25% margin for voltage transients
R_DS(on) max	790 mΩ @ V_GS = 10 V, I_D = 2.5 A - defines conduction loss at rated current
I_D cont	5 A @ T_C = 25 °C - usable continuous current with adequate heatsinking
Q_g	14 nC - determines gate drive power and switching speed in PWM stages
E_AS	140 mJ - enables unclamped inductive switching without failure under defined test conditions
C_iss	364 pF - impacts high-frequency gate drive impedance and Miller effect sensitivity
T_J range	–55 to 150 °C - certified for under-hood automotive environments per AEC-Q101

Pinout & Package

Package: DPAK (TO-252), surface-mount, single-ended heat dissipation via exposed drain tab (pin 2/TAB). Standard JEDEC outline with 2.286 mm pitch between gate and source pins.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤ ±25 V drive; 5.4 Ω internal gate resistance limits ringing
2 (TAB/D)	Drain (exposed pad)	Main high-side power path; electrically connected to case; primary thermal conduction path
3 (S)	Source	Reference node for gate drive; carries full load current; connects to ground or low-side return

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications including engine control and lighting modules
100% avalanche tested	Each unit undergoes unclamped inductive switching stress to guarantee E_AS ≥ 140 mJ
Low C_iss and Q_g	Reduces gate driver losses and enables >100 kHz operation in isolated flyback and LLC topologies
MDmesh™ II architecture	Delivers 25% lower R_DS(on) × Q_g figure-of-merit vs. first-gen MDmesh devices
Low gate input resistance	5.4 Ω intrinsic R_g suppresses parasitic oscillation without external gate resistor in many layouts

Applications

Automotive LED Headlamp Driver

Industrial AC-DC PFC Stage

Use Scenario: High-side switch controlling 40 W LED arrays in adaptive driving beam systems with PWM dimming up to 2 kHz.

IC Role / Device Role / Timing Role: Main power switch in buck-derived constant-current regulator; handles 350–450 V DC link with 5 A peak load.

Use Value: AEC-Q101 rating ensures reliability over 15-year vehicle life; 140 mJ EAS withstands load dump transients without snubber.

Use Scenario: Boost switch in active PFC front-end for 1 kW industrial power supply operating at 65 kHz.

IC Role / Device Role / Timing Role: High-voltage switching element in continuous conduction mode (CCM) boost converter; switches 400 V DC bus.

Use Value: Low R_DS(on) (730 mΩ typ.) minimizes conduction loss at 5 A RMS; 364 pF C_iss reduces gate drive burden.

Telecom DC-DC Brick Converter

EV Onboard Charger Auxiliary Supply

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter for telecom shelf management units.

IC Role / Device Role / Timing Role: 500 V-rated switch handling reflected output voltage spikes during synchronous rectification transitions.

Use Value: 15 V/ns dv/dt immunity prevents false turn-on during fast voltage transitions; low Q_gd (7 nC) improves cross-conduction margin.

Use Scenario: High-side switch in auxiliary 12 V/3 A SMPS supplying MCU and gate drivers inside EV onboard chargers.

IC Role / Device Role / Timing Role: Isolated flyback primary switch operating from 450 V DC link derived from AC rectification.

Use Value: 2.78 °C/W R_thJC allows direct mounting to aluminum heatsink; 187 ns trr enables zero-voltage switching (ZVS) assist.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 500 V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK50ZFP	Higher R_DS(on) (900 mΩ max), Zener-protected gate, TO-220FP package	Limited to lower-frequency (<50 kHz), non-automotive applications due to no AEC-Q101 rating	Select when cost-sensitive, non-automotive designs require through-hole mounting and gate protection
IXTP50N10P	Lower V_DS (100 V), higher I_D (50 A), TO-220 package, no avalanche rating	Only suitable for low-voltage DC-DC; cannot replace in 400 V bus applications	Not a functional substitute - use only in <120 V systems where high current dominates design priority

Compared with STP9NK50ZFP and IXTP50N10P, STD9NM50N uniquely delivers AEC-Q101 compliance, DPAK thermal performance, and verified 140 mJ avalanche energy - making it the sole choice for automotive-grade 500 V switching where reliability and package efficiency are co-critical.

Availability

STD9NM50N is available at Aetrix Electronics and suitable for automotive LED drivers, industrial PFC stages, telecom DC-DC bricks, and EV auxiliary power supplies requiring stable component supply across extended product lifecycles.

Supply support for STD9NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STD9NM50N belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in automotive and industrial power conversion where low R_DS(on) × Q_g and ruggedness are mandatory.

FAQ

What is the maximum safe operating temperature for STD9NM50N?

The junction temperature must not exceed 150 °C under steady-state operation. With R_thJC = 2.78 °C/W, maintaining T_C ≤ 110 °C ensures T_J stays within limit at 5 A continuous current. Derating is required above 100 °C case temperature per datasheet Figure 1 (SOA curve).

Does STD9NM50N require a gate resistor in typical applications?

Yes - although its intrinsic gate resistance is 5.4 Ω, a discrete 5–10 Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance and prevent spurious turn-on during fast dv/dt events. Layout-dependent; verify with oscilloscope measurement of V_GS overshoot.

Can STD9NM50N be used in synchronous rectification configurations?

No - it is an N-channel high-side switch, not optimized for low-voltage synchronous rectification. Its body diode has 1.5 V forward drop and 187 ns recovery time, making it unsuitable as a secondary-side rectifier. Use dedicated low-V_F, fast-recovery Schottky or logic-level MOSFETs instead.

Is the drain tab (pin 2) electrically isolated from other pins?

No - the exposed drain tab (pin 2) is electrically connected to the drain terminal and must be insulated from the heatsink using a thermally conductive but electrically isolating pad (e.g., silicone-based insulator with <1 kV dielectric strength) when mounted to a grounded metal surface.

STD9NM50N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 790mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 570 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD9NM50N FAQ

1.How can I place an order for STD9NM50N through Aetrix?

Please submit a Request for Quotation (RFQ) for STD9NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD9NM50N reliable?

The price and inventory of STD9NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD9NM50N is usually 5 days.

3.What payment methods are accepted for STD9NM50N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD9NM50N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD9NM50N?

STD9NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD9NM50N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD9NM50N?

For technical support, including STD9NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD9NM50N requirements.

6.How does Aetrix verify that STD9NM50N is sourced from the original manufacturer or authorized distributors?

All STD9NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD9NM50N meets industry standards.

7.What is the process for return or replacement of STD9NM50N?

All STD9NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STD9NM50N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD9NM50N part is unused and in its original packaging.

Return procedure for STD9NM50N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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