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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STD9NM50N-1

Name: STD9NM50N-1
Brand: STMicroelectronics
SKU: STD9NM50N-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD9NM50N-1

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: STD9NM50N-1.pdf

Description:: MOSFET N-CH 500V 5A IPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STD9NM50N-1 from STMicroelectronics is an N-channel 500 V, 7.5 A, 0.47 Ω (typ) MDmesh™ II Power MOSFET in IPAK package, designed for high-efficiency switch-mode power supplies and offline AC-DC converters where low conduction loss and fast switching are critical. It features 100% avalanche tested ruggedness, low gate charge (20 nC), and optimized capacitance profile (Ciss = 570 pF).

For engineers reviewing the STD9NM50N-1 datasheet, STD9NM50N-1 pinout, STD9NM50N-1 application, or STD9NM50N-1 equivalent, key selection criteria include R_DS(on) at 10 V drive, unclamped inductive switching capability (E_AS = 150 mJ), diode recovery performance (t_rr = 280 ns @ T_j = 25°C), and thermal resistance (R_thj-case = 5 °C/W).

Technical Context

This device implements ST's second-generation MDmesh™ vertical superjunction architecture with strip layout, delivering reduced specific on-resistance and gate charge versus first-gen devices. Its 500 V V_DSS rating supports universal-input offline topologies up to 265 V_AC, while the 0.47 Ω typical R_DS(on) enables high-current operation at moderate junction temperatures.

The MOSFET integrates a robust body diode with 7.5 A continuous source-drain current capability and controlled reverse recovery (Q_rr = 2 µC, I_RRM = 14 A), making it suitable for hard-switched flyback and resonant LLC primary-side switching where diode commutation stress must be managed.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - Supports 265 V_AC input rectified to ~375 V_DC with 33% margin for surge and ringing
R_DS(on) (max)	0.56 Ω @ V_GS = 10 V, I_D = 3.7 A - Limits conduction loss to ≤1.95 W at 7.5 A DC
Q_g	20 nC - Enables efficient 100–300 kHz switching with standard gate drivers (e.g., TC442x)
E_AS	150 mJ - Withstands single-pulse inductive energy without failure under worst-case turn-off conditions
t_r/t_f	16 ns / 19 ns @ V_DD = 250 V, R_G = 4.7 Ω - Minimizes switching transition losses in high-frequency SMPS
R_thj-case	5 °C/W - Requires heatsink interface with ≤10 °C/W total thermal resistance to maintain T_j < 150°C at 25 W dissipation
C_iss	570 pF @ V_DS = 50 V - Sets Miller plateau duration and influences gate drive power requirements

Pinout & Package

STD9NM50N-1 uses the IPAK (TO-251) package: three-lead surface-mount variant with isolated drain tab, compatible with DPAK PCB footprints but requiring mechanical anchoring due to leadframe design. Thermal pad is electrically connected to Drain (Pin 1).

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Main current path from drain to channel	Connected to high-voltage DC bus; requires thermal pad soldering to copper pour for heat dissipation
2 (Gate)	Control electrode for channel modulation	High-impedance input (R_g = 6 Ω); sensitive to ESD; requires low-inductance gate loop layout
3 (Source)	Reference node for gate drive and current return	Common node for load current return and gate driver ground; defines local ground reference for control circuitry

Key Features

Feature	Design Value
MDmesh™ II superjunction structure	Reduces R_DS(on) × Q_g figure-of-merit by ~35% vs. first-gen, enabling higher efficiency at 100–500 kHz
100% UIS avalanche rated	Guarantees single-pulse ruggedness up to 150 mJ without derating-eliminates need for external snubbers in flyback clamp circuits
Low C_oss (46 pF) & C_rss (6 pF)	Minimizes Miller effect and dv/dt-induced turn-on risk during high-side switching in half-bridge configurations
Optimized body diode recovery	t_rr = 280 ns and Q_rr = 2 µC at 25°C enable reliable ZVS in LLC and reduce EMI in hard-switched PFC stages
ECOPACK® RoHS-compliant packaging	Lead-free second-level interconnect with JEDEC JESD97 marking-meets industrial and consumer environmental compliance requirements

Applications

Offline Flyback Converter

Industrial AC-DC Power Supply

Use Scenario: Primary-side switch in 30–65 W universal-input flyback for LED drivers and auxiliary power rails.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer via transformer primary winding; operates at 65–130 kHz.

Use Value: Low R_DS(on) reduces conduction loss at peak currents; avalanche rating eliminates need for clamping zener in cost-sensitive designs.

Use Scenario: Main switch in 75–150 W open-frame AC-DC power supply for PLCs and motor drives.

IC Role / Device Role / Timing Role: Primary-side power switch in discontinuous conduction mode (DCM) or quasi-resonant (QR) topology.

Use Value: Fast t_r/t_f and low Q_g enable high-frequency QR operation, shrinking transformer size and improving light-load efficiency.

DC-DC Boost PFC Stage

High-Voltage DC-DC Converter

Use Scenario: Switching element in active boost PFC front-end for 110–240 V_AC inputs feeding 380–400 V_DC bus.

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch operating at 50–100 kHz with fixed-frequency or critical conduction mode control.

Use Value: Low C_iss/C_rss minimizes switching loss and improves power factor correction linearity across wide input range.

Use Scenario: Primary switch in isolated 48 V–400 V DC-DC converter for telecom rectifiers or EV battery chargers.

IC Role / Device Role / Timing Role: Hard-switched or phase-shifted full-bridge primary switch handling up to 7.5 A RMS current.

Use Value: Rugged avalanche capability ensures reliability during bus transients; 500 V rating supports 400 V_DC input with safety margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 500 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NM50N	Same die, TO-220 package; R_thj-case = 1.78 °C/W vs. 5 °C/W; higher ID_cont = 7.5 A @ T_C = 25°C	Better thermal performance in forced-air or heatsink-mounted setups; not surface-mountable	Select when board space allows through-hole mounting and thermal management prioritizes conduction over footprint
FDPF18N50FT	ON Semiconductor SuperFET II; R_DS(on) = 0.48 Ω, Q_g = 22 nC, C_iss = 520 pF; same IPAK package	Similar switching performance but lower E_AS (120 mJ); no 100% UIS test guarantee per datasheet	Choose for cost-sensitive volume production where full avalanche ruggedness is not mandated by safety standards

Compared with STP9NM50N and FDPF18N50FT, STD9NM50N-1 offers superior surface-mount integration and certified avalanche immunity-critical for compact, unheatsinked flyback designs-but trades off thermal resistance and absolute ruggedness margin versus TO-220 alternatives.

Availability

STD9NM50N-1 is available at Aetrix Electronics and suitable for offline flyback converters, industrial AC-DC power supplies, and high-voltage DC-DC converters requiring stable component supply and long-term manufacturability.

Supply support for STD9NM50N-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching applications including server PSUs, LED lighting, and industrial power conversion where low R_DS(on) × Q_g is essential.

FAQ

What is the maximum continuous drain current for STD9NM50N-1 at 100°C case temperature?

The maximum continuous drain current is 5 A at T_C = 100°C, as specified in Table 1 of the datasheet. This derating reflects thermal limits of the IPAK package (R_thj-case = 5 °C/W); operation above this requires active cooling or pulse-width limitation to maintain T_j ≤ 150°C.

Does STD9NM50N-1 have a fully rated avalanche capability, and how is it tested?

Yes-STD9NM50N-1 is 100% tested for unclamped inductive switching (UIS) per JEDEC JESD24-1. Each unit undergoes single-pulse avalanche stress at I_AS = 3 A and E_AS = 150 mJ, ensuring guaranteed ruggedness without screening fallout or derating in production.

Can STD9NM50N-1 replace STD9NM50N in existing designs?

Yes-STD9NM50N-1 and STD9NM50N share identical electrical specifications and IPAK package, differing only in ordering code and tube packaging. Both use the same die and mechanical outline; no layout or thermal redesign is required for substitution.

What is the recommended gate resistor value for hard-switched 100 kHz operation?

A 4.7 Ω gate resistor is validated in the datasheet (Table 6) for 250 V V_DD, 3.7 A I_D, yielding t_r = 16 ns and t_f = 19 ns. For 100 kHz hard-switching, this value balances switching speed against gate drive stability and EMI; values below 3.3 Ω may cause ringing without proper layout.

STD9NM50N-1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 560mOhm @ 3.7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 570 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

STD9NM50N-1 FAQ

1.How can I place an order for STD9NM50N-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD9NM50N-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD9NM50N-1 reliable?

The price and inventory of STD9NM50N-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD9NM50N-1 is usually 5 days.

3.What payment methods are accepted for STD9NM50N-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD9NM50N-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD9NM50N-1?

STD9NM50N-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD9NM50N-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD9NM50N-1?

For technical support, including STD9NM50N-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD9NM50N-1 requirements.

6.How does Aetrix verify that STD9NM50N-1 is sourced from the original manufacturer or authorized distributors?

All STD9NM50N-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD9NM50N-1 meets industry standards.

7.What is the process for return or replacement of STD9NM50N-1?

All STD9NM50N-1 units undergo pre-shipment inspection (PSI). If there is an issue with STD9NM50N-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD9NM50N-1 part is unused and in its original packaging.

Return procedure for STD9NM50N-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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