STMicroelectronics STE140NF20D

Overview

STE140NF20D from STMicroelectronics is an N-channel 200 V, 140 A Power MOSFET in ISOTOP package with STripFET™ II process and integrated fast-recovery body diode. It delivers 10 mΩ typical R_DS(on), 25 V/ns dv/dt capability, and 800 mJ single-pulse avalanche energy - optimized for hard-switching SMPS, motor drives, and UPS inverters.

For engineers reviewing the STE140NF20D datasheet, STE140NF20D pinout, STE140NF20D application, or STE140NF20D equivalent, key selection criteria include its 140 A continuous drain current at T_C = 25 °C, 500 W total dissipation, 100% avalanche-tested ruggedness, and low 338 nC total gate charge for high-efficiency switching control.

Technical Context

This device uses ST's STripFET™ II process to minimize input capacitance (C_iss = 11100 pF) and gate charge, enabling fast switching with t_r = 218 ns and t_f = 250 ns under 100 V/70 A resistive load conditions. Its intrinsic fast body diode supports zero-voltage transition in resonant topologies.

The ISOTOP package provides 0.25 °C/W junction-to-case thermal resistance and 2500 V_AC-RMS insulation withstand voltage, supporting high-voltage isolation in industrial power stages. Avalanche rating (E_AS = 800 mJ) and 25 V/ns dv/dt immunity ensure robust operation in inductive switching environments.

Key Specifications

Pinout & Package

The STE140NF20D is housed in an ISOTOP package - a through-hole, isolated metal-can package with three terminals: Drain (case), Source (pin 1), and Gate (pin 2). The metal case serves as the Drain connection and provides electrical isolation up to 2500 V_AC-RMS.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-voltage power switching applications.

Compared with IXFH140N20X3 and IRFP4668PBF, the STE140NF20D offers superior diode performance and isolation integrity (2500 V_AC) in ISOTOP, making it optimal for safety-critical industrial inverters where internal diode reliability and creepage distance matter.

Availability

STE140NF20D is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and server power supply designs requiring stable component supply and long-term production continuity.

Supply support for STE140NF20D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The STE140NF20D belongs to ST's STripFET™ II Power MOSFET product line - engineered specifically for high-efficiency, high-reliability switching in industrial power conversion systems demanding ruggedness and thermal stability.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STE140NF20D supports 88 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the ISOTOP package and ensures safe operation within the SOA curve under sustained high-power conditions.

Does the STE140NF20D require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage (V_GS(th)) of 2–4 V and is fully enhanced at V_GS = 10 V. A gate drive of 0 V is sufficient for turn-off; applying –5 V is unnecessary and not recommended per absolute maximum ratings (±20 V).

Can the ISOTOP package be mounted directly to a heatsink without isolation hardware?

No. The metal case is electrically connected to the Drain terminal. Mounting must use insulating thermal pads or mica washers with appropriate dielectric strength (≥2500 V_AC-RMS) to maintain isolation integrity and prevent short circuits in floating topologies.

How does the 100% avalanche testing impact design margin in unclamped inductive switching?

Each unit undergoes single-pulse avalanche stress to guarantee minimum E_AS = 800 mJ. This eliminates statistical variation in ruggedness, allowing designers to rely on worst-case energy absorption without derating - critical for protection against transformer saturation or load dump events.