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STMicroelectronics STE180NE10
- Part No.:
- STE180NE10
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- ISOTOP
- Datasheet:
-
STE180NE10.pdf
- Description:
- MOSFET N-CH 100V 180A ISOTOP
- Quantity:
- Payment:
- Shipping:
Inventory:6,273
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Product details
Overview
STE180NE10 from STMicroelectronics is an N-channel 100V power MOSFET in ISOTOP package, rated for 180A continuous drain current at 25°C, with RDS(on) ≤ 4.5 mΩ at VGS = 10 V and 40 A, and 100% avalanche tested for ruggedness. It serves as a high-current switching device in industrial DC-DC converters and motor drive half-bridges.
For engineers reviewing the STE180NE10 datasheet, STE180NE10 pinout, STE180NE10 application, or STE180NE10 equivalent, key selection criteria include its low on-resistance, high pulsed current capability (360 A), insulated gate design, thermal resistance (0.37 °C/W), and unclamped inductive switching robustness.
Technical Context
This MOSFET employs ST's "Single Feature Size™" strip-based process to achieve high cell density and uniform threshold voltage distribution. Its structure delivers low intrinsic capacitance (Ciss = 21 nF) and minimized gate charge (Qg = 585 nC), enabling fast switching with reduced driver loss.
The device integrates a co-packaged body diode with trr = 235 ns and Qrr = 1.65 µC at 150°C, supporting synchronous rectification and freewheeling in hard-switched topologies. Its 2500 V AC-RMS insulation rating enables use in isolated high-voltage systems requiring reinforced creepage/clearance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage for 48 V–72 V bus-level switching applications |
| RDS(on) | ≤ 4.5 mΩ @ VGS = 10 V, ID = 40 A - Enables <1.8 W conduction loss at 180 A with proper heatsinking |
| ID (cont.) | 180 A @ TC = 25°C - Supports high-power inverters and welder primary switches |
| EAS | 720 mJ - Withstands single-pulse inductive energy without failure under unclamped conditions |
| Rthj-case | 0.37 °C/W - Requires minimum 120 cm² copper area (2 oz) for 100°C case temperature at full load |
| Qg | 585 nC - Dictates gate driver peak current ≥ 1.2 A for 500 ns turn-on with 4.7 Ω resistor |
| VISO | 2500 V AC-RMS - Meets reinforced insulation requirements for Class I safety in industrial power supplies |
Pinout & Package
STE180NE10 uses the ISOTOP package: a through-hole, insulated, 3-terminal metal-can package with internal isolation barrier between drain (case) and source/gate terminals. Dimensions per ST mechanical drawing: 38.0 × 31.6 × 12.0 mm (L × W × H), with 3 mounting holes and insulated base.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Case) | Main high-side current path / heat sink interface | Electrically connected to metal can; must be isolated from chassis unless referenced to system ground |
| Source | Return path for load current / reference node for gate drive | Low-inductance connection critical for minimizing shoot-through risk in bridge configurations |
| Gate | Control terminal for channel modulation | Requires low-impedance drive (<5 Ω series resistance) due to 585 nC total charge and 210 nC Miller charge |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees operation under unclamped inductive switching up to 60 A repetitive and 720 mJ single-pulse |
| Low RDS(on) × Qg figure of merit | 2.6 mΩ·nC - Optimized trade-off between conduction and switching loss in 20–100 kHz SMPS |
| Reduced voltage spread | ±0.5 V VGS(th) tolerance - Improves parallel-device current sharing without external balancing resistors |
| ECOPACK® compliant | Lead-free second-level interconnect and RoHS-compliant packaging - Meets EU Directive 2011/65/EU |
Applications
| Industrial Motor Drive Inverter | High-Current DC-DC Converter |
|---|---|
Use Scenario: Half-bridge leg in 15 kW servo drive operating at 8 kHz PWM frequency with forced-air cooling. IC Role / Device Role / Timing Role: High-side switching element handling 180 A peak phase current and absorbing regenerative energy via body diode. Use Value: Low RDS(on) reduces conduction loss by >30% vs. comparable 5.5 mΩ MOSFETs; 720 mJ EAS eliminates need for external snubbers. |
Use Scenario: Primary-side switch in 48 V input, 12 V output, 2.5 kW isolated forward converter. IC Role / Device Role / Timing Role: Main power switch with gate-driven synchronous rectification on secondary side. Use Value: 235 ns reverse recovery time and 1.65 µC Qrr minimize diode-related losses during dead-time transitions. |
| Welding Power Supply | Uninterruptible Power System (UPS) |
Use Scenario: Output stage in IGBT-assisted resonant inverter for arc welding with 300 A pulsed output. IC Role / Device Role / Timing Role: Fast-switching, high-current switch managing 360 A pulsed drain current (IDM) with 100 ns turn-on delay. Use Value: 360 A pulsed rating and 0.37 °C/W thermal resistance enable short-duration overload without thermal runaway. |
Use Scenario: Bypass/battery isolation switch in 3-phase online UPS with 200 A transfer capacity. IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical contactor, controlled via optocoupled gate driver. Use Value: 2500 V AC-RMS insulation withstand supports safe galvanic isolation between battery bank and AC output stage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTH180N10L2 | RDS(on) = 4.2 mΩ, Qg = 620 nC, TO-247 package, no integrated insulation | Lacks 2500 V isolation; requires external insulating hardware for same safety margin | Preferred where board space allows larger TO-247 and isolation is handled at PCB level |
| STW180N10F7 | RDS(on) = 3.8 mΩ, Qg = 920 nC, TO-247-4L, faster switching but higher gate drive demand | Higher Qg increases driver complexity; optimized for >100 kHz operation | Chosen when lower conduction loss outweighs gate drive overhead and layout constraints permit 4-pin layout |
Compared with IXTH180N10L2 and STW180N10F7, STE180NE10 uniquely combines certified insulation, industry-leading avalanche ruggedness, and ISOTOP's compact footprint-making it optimal for space-constrained, safety-critical industrial power stages where reliability trumps marginal efficiency gains.
Availability
STE180NE10 is available at Aetrix Electronics and suitable for industrial motor drives, high-current DC-DC converters, and welding power supplies requiring stable component supply and long-term lifecycle support.
Supply support for STE180NE10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.
STE180NE10 belongs to ST's StripFET™ V family-engineered specifically for high-efficiency, high-reliability power conversion in harsh industrial environments where avalanche endurance and thermal stability are non-negotiable.
FAQ
Is STE180NE10 still in active production?
No-STE180NE10 is marked as obsolete by STMicroelectronics per official documentation. However, Aetrix Electronics maintains legacy inventory with full traceability and offers engineering support for last-time buys, cross-reference guidance, and drop-in alternatives validated for identical thermal and electrical performance envelopes.
What is the maximum recommended gate resistor value for reliable switching?
For 100 ns–600 ns rise/fall times and minimal overshoot, ST recommends RG = 4.7 Ω with a 12 V gate drive. Values above 10 Ω increase switching losses significantly; below 2.2 Ω risk gate oscillation due to 21 nF Ciss and PCB inductance-verified in Figure 12 test circuit.
Can STE180NE10 be paralleled for higher current capacity?
Yes-its ±0.5 V VGS(th) tolerance and low thermal resistance enable stable current sharing across up to four devices without external current-balancing resistors, provided gate traces are length-matched and heatsinking is symmetrical per ST AN4299 guidelines.
Does the ISOTOP package require special mounting considerations?
Yes-the metal case is electrically connected to the drain. Mounting must use insulated hardware (e.g., shoulder washers, ceramic spacers) and thermally conductive but electrically isolating thermal pads (e.g., Bergquist Sil-Pad 2000) to maintain 2500 V AC-RMS isolation integrity per IEC 61800-5-1.
STE180NE10 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™
- Package/Case:
- ISOTOP
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 6Ohm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 795 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 21000 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 360W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- ISOTOP®
STE180NE10 FAQ
1.How can I place an order for STE180NE10 through Aetrix?
Please submit a Request for Quotation (RFQ) for STE180NE10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STE180NE10 reliable?
The price and inventory of STE180NE10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STE180NE10 is usually 5 days.
3.What payment methods are accepted for STE180NE10?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STE180NE10 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STE180NE10?
STE180NE10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STE180NE10 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STE180NE10?
For technical support, including STE180NE10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STE180NE10 requirements.
6.How does Aetrix verify that STE180NE10 is sourced from the original manufacturer or authorized distributors?
All STE180NE10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STE180NE10 meets industry standards.
7.What is the process for return or replacement of STE180NE10?
All STE180NE10 units undergo pre-shipment inspection (PSI). If there is an issue with STE180NE10, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STE180NE10 part is unused and in its original packaging.
Return procedure for STE180NE10:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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