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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STE250NS10

Name: STE250NS10
Brand: STMicroelectronics
SKU: STE250NS10
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STE250NS10

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: ISOTOP

Datasheet:: STE250NS10.pdf

Description:: MOSFET N-CH 100V 220A ISOTOP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STE250NS10 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in ISOTOP package, rated for 100 V drain-source voltage, 0.0045 Ω typical R_DS(on) at V_GS = 10 V, 220 A continuous drain current at T_C = 25°C, and 500 W total power dissipation - designed for high-current DC-DC conversion, motor drive half-bridges, and industrial switching inverters.

For engineers reviewing the STE250NS10 datasheet, STE250NS10 pinout, STE250NS10 application, or STE250NS10 equivalent, key selection criteria include its 100% avalanche-tested ruggedness, low gate charge (900 nC), fast switching (t_d(off) ≤ 1100 ns), and thermal resistance junction-to-case of 0.25 °C/W - critical for high-reliability power stage design.

Technical Context

This device employs ST's StripFET™ III process with single-feature-size strip geometry to achieve high cell density and low on-resistance while maintaining robust unclamped inductive switching capability. Its 220 A repetitive avalanche rating and 800 mJ single-pulse E_AS support operation under transient overloads without external snubbers.

The ISOTOP package provides direct metal-to-heatsink mounting via M4 screws, enabling low thermal impedance (R_thj-case/heatsink ≤ 0.05 °C/W) and high-current conduction through three isolated terminals: Drain (case), Source (pin), and Gate (pin). The integrated source-drain diode exhibits t_rr = 200 ns and Q_rr = 1.35 µC at 150°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - maximum blocking voltage before avalanche onset; supports 48 V and 72 V bus systems with margin.
R_DS(on)	0.0045 Ω (typ) at V_GS = 10 V - enables <1 W conduction loss at 15 A, critical for efficiency in high-current SMPS.
I_D (cont)	220 A at T_C = 25°C - defines maximum steady-state current with case temperature monitoring.
Q_g	900 nC - determines gate driver power requirement and switching speed trade-off in hard-switched topologies.
E_AS	800 mJ - quantifies energy-handling capability during unclamped inductive turn-off; eliminates need for external clamping in many motor drives.
R_thj-case	0.25 °C/W - sets minimum heatsink thermal resistance required to maintain T_j ≤ 150°C at full power.
t_r/t_f	110/300 ns - defines minimum dead-time requirements and EMI generation profile in bridge configurations.

Pinout & Package

The STE250NS10 uses the ISOTOP package: a through-hole, insulated-metal-base power package with three terminals - Drain connected to the metal tab (electrically active), Source and Gate on insulated pins - optimized for direct heatsink mounting and high-voltage isolation (2500 V_DC).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Metal Tab)	Main high-side current path / Heat transfer interface	Electrically active drain node; must be isolated from heatsink unless referenced to system ground; primary thermal path.
Source (Pin 1)	Reference node for gate drive and current sensing	Low-inductance connection point for source return; used for Kelvin sensing in precision current control designs.
Gate (Pin 2)	Control electrode for channel modulation	High-impedance input requiring <900 nC charge; sensitive to dv/dt-induced turn-on; requires gate resistor ≥4.7 Ω for stable switching.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees reliable operation under unclamped inductive switching stress up to 220 A, reducing need for external protection circuits.
Standard threshold drive (V_GS(th) = 2–4 V)	Compatible with 5 V and 3.3 V logic-level gate drivers without level-shifting, simplifying control-stage design.
Low R_DS(on) × Q_g figure-of-merit	Enables high-efficiency, high-frequency operation in synchronous rectifiers and LLC resonant converters.
ISOTOP mechanical footprint	Provides 45 mm² contact area and ≤5 nH lead inductance - minimizes parasitic oscillation and improves thermal coupling to heatsink.

Applications

Industrial Motor Drives

High-Power DC-DC Converters

Use Scenario: Three-phase inverter stages in HVAC compressors and industrial pumps operating at 48–72 V DC bus.

IC Role / Device Role / Timing Role: High-side and low-side switching element in IGBT/MOSFET half-bridge modules handling 15–30 kW output.

Use Value: 220 A continuous current and 800 mJ avalanche energy enable robust operation during stall and overload conditions without derating.

Use Scenario: Primary-side switch in isolated 1–3 kW telecom and server PSUs using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Main power switch subjected to ZVS transitions and high dv/dt stress (>3.5 V/ns).

Use Value: Low C_oss (4.3 nF) and Crss (1.2 nF) reduce switching losses and improve ZVS range; 0.25 °C/W R_thj-case maintains junction temperature below 135°C at full load.

Uninterruptible Power Supplies

Welding Equipment Inverters

Use Scenario: Bidirectional buck-boost stage in online UPS systems managing battery charging and AC inversion simultaneously.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in dual-function power stage with reverse conduction demands.

Use Value: Integrated source-drain diode with 1.5 V forward drop and 200 ns t_rr supports efficient bidirectional current flow without discrete antiparallel diodes.

Use Scenario: Output inverter stage in IGBT-based arc welding machines requiring pulsed 500–800 A peak currents.

IC Role / Device Role / Timing Role: Fast-switching, high-current switch in resonant inverter driving transformer-coupled secondary.

Use Value: 880 A pulsed drain current rating (I_DM) and 300 µs pulse capability allow sustained arc initiation and regulation without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH220N10L2	R_DS(on) = 0.0038 Ω (lower), Q_g = 1150 nC (higher), TO-247 package	Higher peak current but larger footprint and no integrated insulation; requires external isolation bushings	Preferred where lower conduction loss dominates over gate drive complexity and board space.
IRFP4368PBF	R_DS(on) = 0.0042 Ω, Q_g = 1020 nC, TO-247AC package, non-avalanche-rated	Lacks 100% avalanche testing; requires external RCD clamp in inductive switching	Suitable for resistive or lightly inductive loads where cost sensitivity outweighs ruggedness requirements.

Compared with IXTH220N10L2 and IRFP4368PBF, the STE250NS10 offers superior thermal integration via ISOTOP mounting, guaranteed avalanche robustness, and lower gate charge - making it optimal for space-constrained, high-reliability industrial inverters where heatsink coupling and transient immunity are prioritized over minimal R_DS(on).

Availability

STE250NS10 is available at Aetrix Electronics and suitable for industrial motor drives, high-power DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-lifecycle support.

Supply support for STE250NS10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.

The STE250NS10 belongs to ST's StripFET™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in industrial automation and energy infrastructure applications where thermal performance and ruggedness are non-negotiable.

FAQ

Is the STE250NS10 RoHS-compliant and halogen-free?

Yes. The STE250NS10 meets RoHS Directive 2011/65/EU and is manufactured in ST's ECOPACK®-compliant ISOTOP package, which is both lead-free and halogen-free per IEC 61249-2-21. Full compliance documentation is available in ST's official product change notifications and material declarations.

What is the maximum recommended gate resistor value for reliable switching?

For stable operation with minimal ringing and dv/dt-induced turn-on, ST recommends R_G = 4.7 Ω (as used in datasheet test conditions). Values above 10 Ω increase switching time and losses; values below 2.2 Ω risk gate oscillation and overshoot, especially with >10 cm PCB traces between driver and MOSFET.

Can the STE250NS10 be used in parallel configurations?

Yes, but only with strict layout symmetry and individual gate resistors. Due to positive temperature coefficient of R_DS(on), paralleling is thermally self-balancing; however, mismatched trace inductance or gate drive skew can cause current imbalance. ST recommends ≤5% R_DS(on) matching and Kelvin source connections for >2 devices.

Does the ISOTOP package require thermal grease when mounted to a heatsink?

Yes. ST specifies use of thermal interface material (TIM) with ≤0.15 °C·in²/W thermal resistance (e.g., Dow Corning TC-5630 or equivalent). Direct metal-to-metal contact without TIM increases R_thj-heatsink beyond the specified 0.05 °C/W, risking junction overheating even with nominal heatsink performance.

STE250NS10 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: ISOTOP

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 220A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 125A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 900 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 31000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 500W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: ISOTOP®

STE250NS10 FAQ

1.How can I place an order for STE250NS10 through Aetrix?

Please submit a Request for Quotation (RFQ) for STE250NS10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STE250NS10 reliable?

The price and inventory of STE250NS10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STE250NS10 is usually 5 days.

3.What payment methods are accepted for STE250NS10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STE250NS10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STE250NS10?

STE250NS10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STE250NS10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STE250NS10?

For technical support, including STE250NS10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STE250NS10 requirements.

6.How does Aetrix verify that STE250NS10 is sourced from the original manufacturer or authorized distributors?

All STE250NS10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STE250NS10 meets industry standards.

7.What is the process for return or replacement of STE250NS10?

All STE250NS10 units undergo pre-shipment inspection (PSI). If there is an issue with STE250NS10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STE250NS10 part is unused and in its original packaging.

Return procedure for STE250NS10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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