Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STE26NA90

Name: STE26NA90
Brand: STMicroelectronics
SKU: STE26NA90
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STE26NA90

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: ISOTOP

Datasheet:: STE26NA90.pdf

Description:: MOSFET N-CH 900V 26A ISOTOP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,972

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STE26NA90 from STMicroelectronics is a high-voltage N-channel fast power MOSFET in ISOTOP package, rated for 900 V V_DSS, 26 A continuous drain current at T_c = 25 °C, and typ. R_DS(on) = 0.25 Ω at V_GS = 10 V. It features 100% avalanche tested ruggedness, low intrinsic capacitance (C_iss = 13.6 nF typ), and minimized gate charge (Q_g = 470 nC typ), enabling high-efficiency, high-speed switching in industrial SMPS and welding inverters.

For engineers reviewing the STE26NA90 datasheet, STE26NA90 pinout, STE26NA90 application, or STE26NA90 equivalent, key selection criteria include its 900 V blocking capability, 0.25 Ω on-resistance at 10 V gate drive, 450 W power dissipation at T_c = 25 °C, 13 A repetitive avalanche current rating, and ISOTOP thermal performance with R_thj-case = 0.27 °C/W.

Technical Context

This MOSFET employs a planar vertical structure optimized for unclamped inductive switching (UIS) robustness and low gate-charge-driven switching losses. Its 900 V V_DSS rating supports high-bus applications like 600 V DC-link welders and UPS inverters, while the 0.25 Ω R_DS(on) ensures low conduction loss at 26 A ID.

The device integrates a fast, soft-recovery body diode (t_rr = 1.3 µs typ, Q_rr = 38 µC typ) and exhibits low output capacitance (C_oss = 1130 pF typ), reducing turn-off energy and improving hard-switching efficiency in resonant and phase-shifted topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	900 V - Enables use in 600–800 V DC bus systems without derating.
R_DS(on) max	0.3 Ω - Ensures ≤19.7 W conduction loss at 26 A, critical for thermal management in high-current SMPS.
I_D (cont, T_c=25°C)	26 A - Supports high-output-power converters up to ~10 kW with forced-air cooling.
Q_g	470 nC - Determines gate driver power requirement; compatible with standard 2 A peak drivers.
C_iss	13.6 nF - Low input capacitance enables faster voltage slew rate and reduced Miller effect.
E_AS	3000 mJ - Confirmed single-pulse avalanche energy allows reliable operation under transient overloads.
R_thj-case	0.27 °C/W - Enables junction temperature control below 150 °C with modest heatsinking (e.g., 0.5 °C/W sink).

Pinout & Package

STE26NA90 uses the ISOTOP (Isolated TO-220 variant) package: metal tab isolated from drain, with three terminals-Drain (tab), Source (pin 1), Gate (pin 2). The insulated case allows direct mounting to heatsink without insulator, simplifying thermal design in high-voltage isolation applications.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path	Electrically isolated metal tab; carries full load current and serves as primary thermal path to heatsink.
Source (Pin 1)	Reference node for gate drive and current sensing	Low-inductance connection point for source return; used for Kelvin sensing in precision current monitoring.
Gate (Pin 2)	Control terminal for channel conduction	High-impedance input requiring <470 nC total charge; sensitive to ESD and requires gate resistor (4.7 Ω typical) for controlled switching.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees UIS reliability up to 13 A repetitive avalanche current and 3000 mJ single-pulse energy.
Low C_oss (1130 pF typ)	Reduces turn-off switching loss and improves ZVS/ZCS transition margin in resonant converters.
Soft-recovery body diode	t_rr = 1.3 µs and low Q_rr = 38 µC minimize voltage overshoot and EMI during freewheeling.
±30 V gate rating	Supports robust gate drive design with 15 V ±10% bias, tolerating transient coupling in noisy industrial environments.
ISOTOP insulation	2500 V AC RMS isolation between tab and pins enables safe mounting on floating heatsinks in high-voltage topologies.

Applications

Welding Inverter Primary Switch

UPS DC-AC Inverter Stage

Use Scenario: High-frequency (20–50 kHz) hard-switched H-bridge in IGBT-replacement arc welding inverters handling 30–50 kW peak power.

IC Role / Device Role / Timing Role: Main high-side switching element in full-bridge topology; operates with 40 ns turn-on delay and 73 ns rise time at 450 V bus.

Use Value: 0.25 Ω R_DS(on) reduces conduction loss by ~35% vs. comparable 900 V Si devices, improving thermal headroom at 100% duty cycle.

Use Scenario: Three-phase inverter stage in online double-conversion UPS systems delivering clean 230 VAC from 750 V DC bus.

IC Role / Device Role / Timing Role: Fast-switching power switch in phase-leg configuration; leverages low Q_g (470 nC) for efficient 16 kHz PWM with minimal gate driver loss.

Use Value: 2500 V isolation rating eliminates need for thermal pad insulation, simplifying heatsink assembly and reducing thermal resistance by 0.15 °C/W.

Industrial Motor Drive Output Stage

High-Voltage SMPS Primary Switch

Use Scenario: 15–30 kW variable-frequency drive output stage powering induction motors in pump/compressor systems.

IC Role / Device Role / Timing Role: High-current, high-dV/dt switching device in six-pack module replacement; handles 104 A pulsed current with 150 °C T_j limit.

Use Value: 13 A repetitive avalanche rating protects against motor stall-induced inductive kickback without external snubbers.

Use Scenario: Forward or half-bridge primary switch in telecom rectifiers and industrial DC supplies operating from 400–800 V DC input.

IC Role / Device Role / Timing Role: High-efficiency main switch with low C_iss/C_oss ratio enabling >94% efficiency at 25 kHz switching frequency.

Use Value: 0.27 °C/W R_thj-case allows 450 W dissipation with compact heatsink, supporting high power density (>10 W/in³) designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK90Z	Same V_DSS (900 V), higher R_DS(on) (0.42 Ω), lower I_D (20 A), Zener-protected gate	Lower current capability; suited for lower-power (<6 kW) SMPS where gate protection outweighs on-loss penalty	Select when enhanced gate ESD immunity is prioritized over conduction loss.
IXTH26N90L2	900 V, 0.27 Ω R_DS(on), 26 A, TO-247 package, no integrated diode softness data	Non-isolated package requires insulator; lacks published t_rr/Q_rr specs, limiting use in diode-commutated topologies	Prefer for non-isolated heatsink layouts where body diode recovery is not critical.

Compared with STW20NK90Z and IXTH26N90L2, STE26NA90 uniquely combines ISOTOP isolation, soft-recovery diode, and lowest R_DS(on) among 900 V/26 A discrete MOSFETs-making it optimal for high-reliability, high-power-density industrial inverters requiring both safety isolation and low-loss switching.

Availability

STE26NA90 is available at Aetrix Electronics and suitable for welding inverters, uninterruptible power supplies, and industrial motor drives requiring stable component supply and long-term industrial lifecycle support.

Supply support for STE26NA90 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, microcontroller, and sensor solutions for industrial, automotive, and consumer markets.

The STE26NA90 belongs to ST's "Power MOSFETs – High Voltage" product line, engineered specifically for rugged, high-efficiency switching in industrial power conversion systems operating above 600 V DC bus.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 4.7 Ω gate resistor is specified in the datasheet for switching tests (td(on), tr, etc.) and balances speed against ringing and gate driver stress. Using >10 Ω increases switching time and losses; <2.2 Ω risks overshoot and excessive peak gate current. For 26 A operation, ensure gate driver delivers ≥2 A peak current into this impedance.

Can STE26NA90 replace IGBTs in 900 V welding inverters?

Yes-its 900 V V_DSS, 26 A current rating, and 450 W power dissipation match typical IGBT requirements in 30–50 kW welding inverters. Its lower conduction loss (vs. IGBT V_CE(sat)) and faster switching reduce overall system losses, though gate drive must be optimized for MOSFET voltage-control characteristics.

Is the ISOTOP package compatible with standard TO-220 heatsinks?

Yes-the ISOTOP mechanical outline matches TO-220 footprint (31.7 mm × 25.5 mm), but the metal tab is electrically isolated. Standard TO-220 heatsinks can be used directly without insulating pads, provided mounting torque (1.2–1.5 N·m) and thermal grease (0.05 °C/W R_thc-h) are applied per datasheet spec.

Does STE26NA90 support synchronous rectification?

No-it is a unidirectional N-channel MOSFET with an integral body diode optimized for freewheeling, not bidirectional conduction. Its body diode has soft recovery (t_rr = 1.3 µs), but lacks the low V_SD and symmetric R_DS(on) needed for true synchronous rectifier operation in LLC or forward converters.

STE26NA90 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: ISOTOP

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 900 V

Current - Continuous Drain (Id) @ 25°C:: 26A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 300mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 3.75V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 660 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1770 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 450W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: ISOTOP®

STE26NA90 FAQ

1.How can I place an order for STE26NA90 through Aetrix?

Please submit a Request for Quotation (RFQ) for STE26NA90 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STE26NA90 reliable?

The price and inventory of STE26NA90 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STE26NA90 is usually 5 days.

3.What payment methods are accepted for STE26NA90?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STE26NA90 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STE26NA90?

STE26NA90 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STE26NA90 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STE26NA90?

For technical support, including STE26NA90 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STE26NA90 requirements.

6.How does Aetrix verify that STE26NA90 is sourced from the original manufacturer or authorized distributors?

All STE26NA90 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STE26NA90 meets industry standards.

7.What is the process for return or replacement of STE26NA90?

All STE26NA90 units undergo pre-shipment inspection (PSI). If there is an issue with STE26NA90, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STE26NA90 part is unused and in its original packaging.

Return procedure for STE26NA90:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…