STMicroelectronics STE40NK90ZD
- Part No.:
- STE40NK90ZD
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- ISOTOP
- Datasheet:
-
STE40NK90ZD.pdf
- Description:
- MOSFET N-CH 900V 40A ISOTOP
- Quantity:
- Payment:

- Shipping:

Inventory:7,724
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STE40NK90ZD from STMicroelectronics is an N-channel SuperFREDMesh™ power MOSFET rated for 900 V drain-source voltage, 0.14 Ω typical RDS(on) at VGS = 10 V and ID = 20 A, 40 A continuous drain current at TC = 25°C, and 600 W total power dissipation - designed for high-current, high-speed switching in welding equipment and industrial SMPS.
For engineers reviewing the STE40NK90ZD datasheet, STE40NK90ZD pinout, STE40NK90ZD application, or STE40NK90ZD equivalent, key selection criteria include its 8 V/ns dv/dt capability, 100% avalanche tested ruggedness, integrated gate-source Zener protection (±30 V rating), low Qg (590 nC), and ISOTOP package thermal performance (Rthj-case = 0.2 °C/W).
Technical Context
This device employs ST's optimized strip-based PowerMESH™ layout enhanced as SuperFREDMesh™ to simultaneously minimize RDS(on) and maximize dv/dt immunity. Its internal structure integrates back-to-back gate-source Zener diodes (VZ = 30 V) for ESD and transient protection without external components.
The MOSFET delivers 1.2 J single-pulse avalanche energy (EAS) at VDD = 35 V and supports unclamped inductive switching with IAR = 40 A. Its source-drain diode exhibits trr = 450 ns and Qrr = 3.6 µC at Tj = 25°C, enabling fast recovery in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 900 V - supports primary-side switching in 400–800 V DC bus applications like industrial welders and HV SMPS. |
| RDS(on) (typ) | 0.14 Ω - enables low conduction loss at 40 A, reducing heatsink requirements in high-power stages. |
| ID (cont, TC=25°C) | 40 A - defines maximum steady-state current under ideal heatsinking conditions. |
| Qg | 590 nC - determines gate drive power and switching speed; compatible with standard 1–2 A peak gate drivers. |
| dv/dt capability | 8 V/ns - ensures robust operation during fast voltage transients in noisy industrial environments. |
| EAS | 1.2 J - quantifies unclamped inductive energy handling without failure, critical for relay/snubberless designs. |
| Rthj-case | 0.2 °C/W - allows direct mounting to heatsink with minimal thermal interface resistance for 600 W dissipation. |
Pinout & Package
Package: ISOTOP - isolated TO-style metal package with four terminals (Drain, Source, Gate, Kelvin Source), rated for 2500 VAC-RMS insulation between all terminals and heatsink. Designed for high-voltage isolation and low-inductance PCB mounting in industrial power modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main high-side current path | Electrically connected to metal tab; must be mounted to insulated heatsink; carries full load current and high dv/dt stress. |
| Source | Power return reference | Primary source terminal for load current return; referenced by gate driver for VGS control. |
| Gate | Control input | High-impedance MOS gate requiring <30 V swing; protected by integrated ±30 V Zener diodes. |
| Kelvin Source | Sense/reference for gate drive | Separate low-noise source connection for accurate gate voltage referencing, minimizing common-source inductance effects. |
Key Features
| Feature | Design Value |
|---|---|
| SuperFREDMesh™ architecture | Optimized strip layout delivering 0.14 Ω RDS(on) while maintaining 8 V/ns dv/dt immunity - balances conduction and switching robustness. |
| 100% avalanche tested | Every unit validated for repetitive and non-repetitive avalanche energy up to 40 A/1.2 J - eliminates screening failures in inductive load circuits. |
| Integrated gate-source Zener protection | Back-to-back 30 V Zeners absorb gate transients and meet 7 kV HBM ESD rating - removes need for external TVS or clamping diodes. |
| Low intrinsic capacitances | Ciss = 25,000 pF, Coss = 1450 pF, Crss = 280 pF - reduces Miller effect and improves controllability in high-frequency switching. |
| Enhanced source-drain diode | trr = 450 ns, Qrr = 3.6 µC at 25°C - enables efficient freewheeling in bridge-leg configurations without snubbers. |
Applications
| Welding Inverter Primary Switch | Industrial HV DC-DC Converter |
|---|---|
Use Scenario: High-duty-cycle switching of 600–800 V DC bus in IGBT-assisted or all-MOSFET welding inverters. IC Role / Device Role / Timing Role: Main high-side power switch operating at 20–50 kHz with hard commutation. Use Value: 0.14 Ω RDS(on) minimizes conduction loss at 40 A; 8 V/ns dv/dt rating prevents false turn-on during rapid bus collapse. | Use Scenario: Isolated step-down conversion in factory automation power supplies feeding PLCs and servo drives. IC Role / Device Role / Timing Role: Primary-side switch in resonant LLC or phase-shifted full-bridge topology. Use Value: 1.2 J EAS withstands transformer leakage inductance spikes; 2500 VAC isolation meets reinforced insulation safety standards. |
| UPS Inverter Output Stage | Induction Heating Half-Bridge |
Use Scenario: Bidirectional power flow control in online double-conversion UPS systems with 400 V DC link. IC Role / Device Role / Timing Role: Synchronous rectifier or active clamp switch in high-efficiency inverter leg. Use Value: Kelvin Source terminal enables precise gate drive referencing, suppressing shoot-through risk during fast transitions. | Use Scenario: Resonant tank switching in 20–100 kW induction heating generators. IC Role / Device Role / Timing Role: High-current half-bridge switch handling pulsed 40 A loads at 10–50 kHz. Use Value: 600 W power rating and 0.2 °C/W Rthj-case support sustained 40 A operation with forced-air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW48N90FD | 900 V, 0.11 Ω RDS(on), 48 A ID, faster tr/tf (75/150 ns), but no Kelvin Source | Lacks Kelvin Source; less suitable for high-di/dt synchronous rectification | Preferred where lower RDS(on) and higher current are prioritized over gate drive precision. |
| IXFH40N90P | 900 V, 0.15 Ω RDS(on), 40 A ID, TO-247 package, no integrated Zener, higher Ciss (32,000 pF) | Requires external gate protection; higher drive loss due to larger input capacitance | Used where legacy TO-247 footprint compatibility is required and Zener integration is handled externally. |
Compared with STW48N90FD and IXFH40N90P, STE40NK90ZD uniquely combines Kelvin Source for noise-immune gate control, integrated ±30 V Zener protection, and ISOTOP isolation - making it optimal for safety-critical, high-reliability welding and UPS inverters where layout simplicity and ruggedness outweigh marginal RDS(on) gains.
Availability
STE40NK90ZD is available at Aetrix Electronics and suitable for welding inverters, industrial HV DC-DC converters, UPS output stages, and induction heating systems requiring stable component supply across multi-year production cycles.
Supply support for STE40NK90ZD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
The SuperFREDMesh™ MOSFET product line targets high-reliability industrial power conversion, emphasizing ruggedness, avalanche tolerance, and integrated protection for demanding hard-switched applications.
FAQ
What is the maximum safe operating temperature for STE40NK90ZD?
The junction temperature must not exceed 150°C under continuous operation. At TC = 100°C, the continuous drain current derates to 25 A. Thermal design must ensure Rthj-amb ≤ 40 °C/W with adequate heatsinking and airflow, especially given its 600 W power dissipation capability at TC = 25°C.
Does STE40NK90ZD require external gate protection?
No - it integrates back-to-back gate-source Zener diodes rated at ±30 V, providing inherent protection against ESD (7 kV HBM) and gate voltage transients. This eliminates the need for external TVS diodes in most industrial layouts, simplifying PCB design and improving reliability in electrically noisy environments.
Can STE40NK90ZD replace older STW40NK90Z in existing designs?
Yes - STE40NK90ZD is a direct drop-in replacement for STW40NK90Z with identical ISOTOP package, pinout, and voltage/current ratings. It offers improved manufacturing repeatability and tighter RDS(on) distribution (0.14 Ω typ vs. 0.16 Ω typ), enabling lower thermal margin requirements without layout changes.
What is the significance of the Kelvin Source terminal in ISOTOP packaging?
The Kelvin Source provides a dedicated low-inductance return path for gate drive circuitry, decoupling power source current from gate reference. This prevents voltage spikes on the gate loop during high-di/dt switching, ensuring stable VGS control and eliminating false turn-on - critical for reliable operation in paralleled or high-frequency bridge configurations.
STE40NK90ZD Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- SuperFREDmesh™
- Package/Case:
- ISOTOP
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 900 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 180mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 826 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 25000 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 600W (Tc)
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- ISOTOP®
STE40NK90ZD FAQ
1.How can I place an order for STE40NK90ZD through Aetrix?
Please submit a Request for Quotation (RFQ) for STE40NK90ZD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STE40NK90ZD reliable?
The price and inventory of STE40NK90ZD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STE40NK90ZD is usually 5 days.
3.What payment methods are accepted for STE40NK90ZD?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STE40NK90ZD transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STE40NK90ZD?
STE40NK90ZD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STE40NK90ZD order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STE40NK90ZD?
For technical support, including STE40NK90ZD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STE40NK90ZD requirements.
6.How does Aetrix verify that STE40NK90ZD is sourced from the original manufacturer or authorized distributors?
All STE40NK90ZD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STE40NK90ZD meets industry standards.
7.What is the process for return or replacement of STE40NK90ZD?
All STE40NK90ZD units undergo pre-shipment inspection (PSI). If there is an issue with STE40NK90ZD, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STE40NK90ZD part is unused and in its original packaging.
Return procedure for STE40NK90ZD:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STE40NK90ZD Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

