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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STE48NM60

Name: STE48NM60
Brand: STMicroelectronics
SKU: STE48NM60
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STE48NM60

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: ISOTOP

Datasheet:: STE48NM60.pdf

Description:: MOSFET N-CH 650V 48A ISOTOP

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Product details

Overview

STE48NM60 from STMicroelectronics is an N-channel 650 V, 48 A, 0.09 Ω (typ.) MDmesh™ superjunction MOSFET in ISOTOP package, designed for high-voltage hard-switched PFC and main switch stages in industrial SMPS. It delivers 15 V/ns dv/dt capability, 850 mJ single-pulse avalanche energy, and is 100% avalanche tested.

For engineers reviewing the STE48NM60 datasheet, STE48NM60 pinout, STE48NM60 application, or STE48NM60 equivalent, this device is selected for high-efficiency, high-power-density offline converters where ruggedness, low conduction loss, and fast switching dynamics are critical.

Technical Context

This MOSFET employs ST's MDmesh™ technology-combining Multiple Drain process with PowerMESH™ horizontal layout-to achieve ultra-low R_DS(on) while maintaining high voltage blocking (600 V min. V_(BR)DSS) and robust unclamped inductive switching performance. Its 1.4 Ω gate input resistance and 96 nC total gate charge support efficient gate drive design in 50–100 kHz hard-switching topologies.

The device features a fast body diode with 508 ns reverse recovery time (T_j = 25°C), 1.5 V forward voltage at 45 A, and tight thermal resistance (R_thj-case = 0.28 °C/W), enabling high-power operation with minimal heatsink footprint in TO-247-compatible ISOTOP mounting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V min. - supports 400 V DC bus designs with ≥50% voltage margin against transients
R_DS(on) (typ.)	0.09 Ω @ V_GS = 10 V, I_D = 22.5 A - enables <1.0 W conduction loss at 30 A continuous current
I_D (cont., T_C = 25°C)	48 A - rated for high-current primary-side switching in >1 kW power supplies
E_AS	850 mJ - withstands repetitive unclamped inductive energy without failure in PFC choke or LLC resonant tank faults
dv/dt rating	15 V/ns - ensures reliable operation under fast voltage transients in high-frequency bridge configurations
Q_g	96 nC - defines gate drive power requirement (~1.9 mW per MHz at 10 V swing) for optimized switching speed vs. EMI trade-off
R_thj-case	0.28 °C/W - allows 450 W dissipation at ≤25°C case temperature, supporting forced-air-cooled 2–3 kW designs

Pinout & Package

The STE48NM60 uses the ISOTOP package-a through-hole, isolated-tab variant of TO-247 with reinforced creepage/clearance and 2500 V_AC insulation rating-designed for high-voltage safety compliance in industrial mains-connected equipment.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector / heat sink interface	Electrically isolated metal tab carries full drain current and serves as primary thermal path; requires insulating washer when mounted to grounded heatsink
Source	Reference node for gate control and current return	Low-inductance source connection essential for stable gate drive and minimizing shoot-through risk in half-bridge layouts
Gate	Control terminal for channel modulation	High-impedance input (1.4 Ω typical) requiring low-ESR gate resistor (4.7 Ω typical) to damp ringing and control dV/dt during turn-on/off

Key Features

Feature	Design Value
MDmesh™ superjunction architecture	Enables 0.09 Ω R_DS(on) at 600 V rating-reducing conduction loss by ~35% vs. planar MOSFETs in same package
100% unclamped inductive avalanche tested	Guarantees robustness in real-world overvoltage events without derating, eliminating need for external snubbers in many PFC designs
Low C_iss/C_oss (3800 pF / 1250 pF)	Reduces capacitive switching losses and improves ZVS/ZCS feasibility in resonant topologies operating above 100 kHz
Fast body diode (t_rr = 508 ns)	Minimizes reverse recovery losses and EMI generation in synchronous rectification or freewheeling paths
ISOTOP isolation (2500 V_AC)	Meets IEC 62368-1 reinforced insulation requirements for primary-to-secondary barrier without additional creepage extenders

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switch in 1–3 kW open-frame AC/DC front-end with active PFC + LLC resonant converter.

IC Role / Device Role / Timing Role: High-voltage, high-current hard-switched main switch handling 400 V DC bus and 48 A peak currents.

Use Value: Low R_DS(on) and high avalanche energy reduce thermal stress and eliminate need for parallel devices in 2 kW designs.

Use Scenario: Main switch in 48 V intermediate bus converter (IBC) with 380 V input, operating at 100–200 kHz.

IC Role / Device Role / Timing Role: Fast-switching, low-Q_g MOSFET enabling high efficiency at elevated frequencies while maintaining safe SOA margins.

Use Value: 96 nC Q_g and 15 V/ns dv/dt allow clean turn-off with minimal gate drive loss and reduced EMI filtering burden.

Motor Drive Inverters

Renewable Energy Converters

Use Scenario: Upper-leg switch in 3-phase inverter for HVAC compressors (≤10 kW), operating with 600 V DC link.

IC Role / Device Role / Timing Role: Rugged switching element subjected to repetitive inductive load transients and bus overvoltage spikes.

Use Value: 100% avalanche testing and 850 mJ E_AS ensure field reliability without external clamping circuits.

Use Scenario: DC-link switch in string inverters for solar PV systems (600–1000 V DC input), exposed to lightning-induced surges.

IC Role / Device Role / Timing Role: High-voltage isolation switch with reinforced insulation barrier between PV array and grid interface.

Use Value: ISOTOP package provides 2500 V_AC isolation, meeting IEC 62109 safety requirements for photovoltaic inverters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48NM60	Same die, TO-247 package (non-isolated tab); R_DS(on) identical, but no 2500 V_AC isolation	Requires external isolation for reinforced insulation; lower cost where creepage/clearance is managed externally	Select when board-level isolation is already implemented and thermal coupling to heatsink is prioritized over safety certification simplicity
IPP60R099C6	Infineon CoolMOS™ C6; 600 V, 0.099 Ω, 43 A; lower Q_g (72 nC) but lower avalanche rating (E_AS = 520 mJ)	Higher switching efficiency at >200 kHz, but less margin in fault conditions requiring high-energy clamping	Select for high-frequency ZVS designs where gate drive loss dominates, and system-level protection handles rare avalanche events

Compared with STW48NM60 and IPP60R099C6, STE48NM60 uniquely combines certified isolation, full avalanche ruggedness, and industry-leading R_DS(on) in one package-making it optimal for safety-critical, high-reliability industrial power stages where certification overhead and field failure risk must be minimized.

Availability

STE48NM60 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, motor drive inverters, and renewable energy converters requiring stable component supply and long-term design continuity.

Supply support for STE48NM60 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs with vertical manufacturing and broad industrial IP portfolio.

The MDmesh™ MOSFET product line was engineered specifically for high-efficiency, high-voltage power conversion-targeting 1–10 kW industrial SMPS, UPS, and renewable energy systems where low R_DS(on), avalanche robustness, and thermal performance are decisive.

FAQ

Is STE48NM60 still in active production?

No-STE48NM60 is marked "Obsolete Product(s)" in the official STMicroelectronics datasheet (Rev. 2, March 2005). It is no longer manufactured or supported by ST. Aetrix Electronics offers limited legacy stock with full traceability for repair, maintenance, and end-of-life design continuity programs.

What is the maximum recommended gate-source voltage?

The absolute maximum gate-source voltage is ±30 V. Operation above ±20 V risks permanent gate oxide damage. For reliable switching, V_GS should be maintained between +10 V (for full enhancement) and –5 V to –10 V (for fast, noise-immune turn-off), per ST's application guidelines for MDmesh™ devices.

Can STE48NM60 replace STW48NM60 in existing PCB layouts?

No-STE48NM60 uses the ISOTOP package with different mechanical dimensions and isolated tab geometry versus the standard TO-247 of STW48NM60. Mounting holes, creepage distances, and heatsink interface are incompatible; board redesign is required to accommodate ISOTOP's larger footprint and reinforced isolation structure.

Does STE48NM60 require a negative gate drive for reliable turn-off?

Not strictly required, but strongly recommended. With V_GS(th) spanning 3–5 V and high dv/dt immunity (15 V/ns), a –5 V to –10 V turn-off bias suppresses Miller-induced false turn-on in high-side or bridge configurations, especially under high di/dt load conditions common in motor drives and PFC circuits.

STE48NM60 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: ISOTOP

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 48A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 110mOhm @ 22.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 134 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 450W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: ISOTOP®

STE48NM60 FAQ

1.How can I place an order for STE48NM60 through Aetrix?

Please submit a Request for Quotation (RFQ) for STE48NM60 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STE48NM60 reliable?

The price and inventory of STE48NM60 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STE48NM60 is usually 5 days.

3.What payment methods are accepted for STE48NM60?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STE48NM60 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STE48NM60?

STE48NM60 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STE48NM60 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STE48NM60?

For technical support, including STE48NM60 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STE48NM60 requirements.

6.How does Aetrix verify that STE48NM60 is sourced from the original manufacturer or authorized distributors?

All STE48NM60 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STE48NM60 meets industry standards.

7.What is the process for return or replacement of STE48NM60?

All STE48NM60 units undergo pre-shipment inspection (PSI). If there is an issue with STE48NM60, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STE48NM60 part is unused and in its original packaging.

Return procedure for STE48NM60:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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