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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STE70NM60

Name: STE70NM60
Brand: STMicroelectronics
SKU: STE70NM60
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STE70NM60

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: ISOTOP

Datasheet:: STE70NM60.pdf

Description:: MOSFET N-CH 600V 70A ISOTOP

Quantity:: RFQ Add To RFQ list

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Inventory:8,387

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Product details

Overview

STE70NM60 from STMicroelectronics is an N-channel 600 V, 70 A Zener-protected MDmesh™ Power MOSFET in ISOTOP package with R_DS(on) = 0.050 Ω (typ), 15 V/ns dv/dt capability, 1.4 J single-pulse avalanche energy, and integrated gate-source Zener diodes for ESD and transient protection-used in high-efficiency, high-voltage AC-DC converters and industrial SMPS.

For engineers reviewing the STE70NM60 datasheet, STE70NM60 pinout, STE70NM60 application, or STE70NM60 equivalent, key selection criteria include its 600 V blocking voltage, 0.050 Ω on-resistance at 10 V_GS, 280 A pulsed drain current, 150 °C max junction temperature, and ISOTOP thermal performance with R_thj-case = 0.2 °C/W.

Technical Context

This MOSFET employs ST's MDmesh™ technology-combining Multiple Drain process and PowerMESH™ horizontal layout-to achieve industry-low R_DS(on) while maintaining robust avalanche ruggedness (30 A repetitive I_AR, 1.4 J E_AS). Its Zener-protected gate structure eliminates need for external gate clamping components.

Dynamic performance is optimized via low input capacitance (C_iss = 7300 pF), low gate charge (Q_g = 178 nC), and fast switching (t_r = 95 ns, t_f = 76 ns) under 470 V/60 A conditions-enabling high-frequency operation in resonant and hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports primary-side switching in universal-input offline SMPS up to 400 V DC bus with margin.
R_DS(on)	0.050 Ω (typ) - enables <1.5 W conduction loss at 70 A continuous drain current (T_C = 25°C).
I_D (cont)	70 A @ T_C = 25°C - delivers high power density in compact heatsinked designs.
E_AS	1.4 J - withstands unclamped inductive switching stress without failure in flyback or LLC resonant converters.
dv/dt	15 V/ns - ensures reliable operation during fast voltage transients in high-noise industrial environments.
Q_g	178 nC - determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers.
R_thj-case	0.2 °C/W - allows >500 W dissipation with modest heatsinking (ΔT = 100°C).

Pinout & Package

The STE70NM60 uses the ISOTOP package-a through-hole, isolated-tab power package with 3 terminals and creepage/clearance optimized for high-voltage safety compliance. Tab is electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, thermally coupled to heatsink	High-current path with low-inductance thermal interface; requires insulated mounting in grounded-chassis systems.
Source	Reference node for gate drive and current sensing	Low-impedance return path; critical for stable gate control and accurate current monitoring in half-bridge configurations.
Gate	Control electrode for channel modulation	Protected by integrated back-to-back Zener diodes (±30 V rating); tolerant of ±6 kV HBM ESD events.

Key Features

Feature	Design Value
MDmesh™ silicon architecture	Delivers 0.050 Ω R_DS(on) at 600 V-30% lower than conventional planar MOSFETs in same package.
Zener-protected gate	Integrated ±30 V gate-source Zeners eliminate need for external TVS, reducing BOM count and PCB area.
Avalanche-rated operation	Rated for 30 A repetitive avalanche current and 1.4 J single-pulse energy-enables robust unclamped inductive switching.
Low C_iss/C_oss ratio	C_iss = 7300 pF, C_oss = 2000 pF - improves zero-voltage switching (ZVS) initiation in resonant converters.
ESD hardness	6 kV HBM (Human Body Model) - meets IEC 61000-4-2 Level 4 for system-level surge immunity during handling and assembly.

Applications

Server PSU Primary Switch

Industrial Motor Drive Inverter

Use Scenario: High-density 3 kW+ server power supplies operating at 100–300 kHz with active clamp or LLC topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling full DC bus voltage (390–400 V) and high peak currents.

Use Value: Low R_DS(on) reduces conduction losses by ~25% vs. legacy 600 V MOSFETs, enabling >96% efficiency at full load.

Use Scenario: 7.5–15 kW variable-frequency drives for pumps, compressors, and conveyors.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 3-phase inverter legs, operating at 8–16 kHz PWM frequency.

Use Value: Avalanche ruggedness and 15 V/ns dv/dt tolerance prevent false triggering and shoot-through during motor cable reflections.

Telecom Rectifier Module

EV Onboard Charger PFC Stage

Use Scenario: -48 V telecom rectifiers with boost PFC and phase-shifted full-bridge DC-DC stages.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side switch in high-frequency DC-DC isolation stage.

Use Value: Low Q_g (178 nC) and fast t_f (76 ns) minimize switching losses at 300–500 kHz, improving power density.

Use Scenario: 6.6 kW bidirectional OBCs using totem-pole PFC with 600 V Si MOSFETs.

IC Role / Device Role / Timing Role: Fast-switching, high-voltage switch in bridgeless PFC leg with zero-voltage turn-on capability.

Use Value: Tight R_DS(on) distribution (0.050–0.055 Ω) ensures balanced current sharing across parallel devices in high-current PFC designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW70NM60FD	Same die, but SuperMESH™-enhanced version with improved E_AS (2.1 J) and lower Q_g (155 nC); TO-247 package.	Higher thermal mass and better heatsink interface; preferred for >100 W continuous dissipation.	Select when higher avalanche energy margin or superior thermal management is required over ISOTOP footprint constraints.
IPP60R099C7	600 V CoolMOS™ C7; R_DS(on) = 0.099 Ω, Q_g = 115 nC, no integrated Zener protection.	Lower gate charge enables faster switching but requires external gate clamping; optimized for >500 kHz operation.	Select for ultra-high-frequency resonant converters where gate drive loss dominates and external protection is acceptable.

Compared with STW70NM60FD and IPP60R099C7, the STE70NM60 offers the lowest on-resistance in ISOTOP form factor with built-in Zener protection-ideal for space-constrained, cost-sensitive industrial SMPS where reliability under voltage transients is critical.

Availability

STE70NM60 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifiers, and EV onboard charger PFC stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for STE70NM60 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, MCU, and sensor solutions for automotive, industrial, and consumer markets.

The MDmesh™ MOSFET product line targets high-efficiency, high-voltage power conversion-specifically engineered to replace older planar technologies in SMPS, UPS, and renewable energy inverters where low R_DS(on) and avalanche ruggedness are essential.

FAQ

What is the maximum safe operating temperature for STE70NM60?

The absolute maximum junction temperature is 150 °C. Operation above this value risks permanent degradation of the silicon and Zener protection structure. Derating begins at T_C = 25°C with a thermal resistance of 0.2 °C/W, meaning sustained 600 W dissipation requires ΔT ≤ 120°C between junction and case-practically limiting continuous power to ~480 W with 100°C case temperature.

Does STE70NM60 require external gate protection?

No. The device integrates back-to-back Zener diodes between gate and source with ±30 V breakdown voltage and 6 kV HBM ESD rating. This eliminates the need for external TVS diodes in most industrial applications, though a small series gate resistor (10–47 Ω) is still recommended to damp ringing and limit peak gate current during fast transitions.

Can STE70NM60 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (confirmed in datasheet Fig. 5) ensures inherent current sharing stability. For reliable paralleling, use matched devices, symmetrical PCB layout, individual gate resistors, and Kelvin-source connections to minimize loop inductance and gate drive skew.

What is the significance of the ISOTOP package for high-voltage isolation?

The ISOTOP package provides reinforced electrical isolation between the drain-connected tab and leads, with creepage and clearance distances exceeding 8 mm-meeting IEC 60950 and IEC 62368 requirements for 600 V working voltage. Its isolated tab allows direct mounting to grounded heatsinks without insulating pads in many Class I safety designs.

STE70NM60 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: ISOTOP

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 55mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 266 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 7300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 600W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: ISOTOP®

STE70NM60 FAQ

1.How can I place an order for STE70NM60 through Aetrix?

Please submit a Request for Quotation (RFQ) for STE70NM60 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STE70NM60 reliable?

The price and inventory of STE70NM60 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STE70NM60 is usually 5 days.

3.What payment methods are accepted for STE70NM60?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STE70NM60 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STE70NM60?

STE70NM60 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STE70NM60 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STE70NM60?

For technical support, including STE70NM60 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STE70NM60 requirements.

6.How does Aetrix verify that STE70NM60 is sourced from the original manufacturer or authorized distributors?

All STE70NM60 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STE70NM60 meets industry standards.

7.What is the process for return or replacement of STE70NM60?

All STE70NM60 units undergo pre-shipment inspection (PSI). If there is an issue with STE70NM60, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STE70NM60 part is unused and in its original packaging.

Return procedure for STE70NM60:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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