STMicroelectronics STE88N65M5

Overview

STE88N65M5 from STMicroelectronics is an N-channel 650 V, 88 A MDmesh™ V Power MOSFET in ISOTOP™ package, featuring 0.024 Ω typ. R_DS(on), 15 V/ns dv/dt capability, and 2000 mJ single-pulse avalanche energy. It serves as a high-efficiency primary-side switch in high-voltage AC-DC power supplies and industrial motor drives.

For engineers reviewing the STE88N65M5 datasheet, STE88N65M5 pinout, STE88N65M5 application, or STE88N65M5 equivalent, key selection criteria include its 650 V V_DS, 0.024 Ω R_DS(on) at 10 V_GS, 15 V/ns dv/dt rating, 204 nC total gate charge, and 150 °C max junction temperature - all critical for hard-switched PFC and resonant LLC topologies.

Technical Context

This device employs ST's MDmesh™ V vertical silicon process combined with PowerMESH™ horizontal layout to achieve ultra-low on-resistance while maintaining high voltage blocking (650 V) and robust avalanche ruggedness. Its 0.253 °C/W R_thj-case enables high-power operation with minimal thermal derating.

The MOSFET delivers fast switching with 141 ns voltage delay time, 16 ns voltage rise time, and low reverse recovery charge (14–20 μC) in its integrated body diode - optimized for high-frequency, high-efficiency SMPS designs where diode commutation losses dominate.

Key Specifications

Pinout & Package

The STE88N65M5 uses the ISOTOP™ package - a through-hole, isolated-tab power package with 3 terminals and high creepage/clearance for 650 V applications. Its mechanical dimensions comply with ST's ISOTOP drawing (DocID025974 Rev 1, Fig. 21), including 38.0 mm D length, 25.3 mm E width, and 15.0 mm G height.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW88N65M5, the STE88N65M5 offers superior thermal performance (0.253 vs. 0.275 °C/W) and inherent isolation via ISOTOP™ tab; versus IPP65R041CFD7, it delivers 41% lower R_DS(on) at the cost of +54% Q_g, favoring high-current, high-duty-cycle use cases.

Availability

STE88N65M5 is available at Aetrix Electronics and suitable for industrial motor drives, server SMPS, and EV charging front-end designs requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for STE88N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The MDmesh™ V product line targets high-efficiency, high-voltage power conversion - specifically engineered for next-generation SMPS, UPS, solar inverters, and industrial motor control where low R_DS(on) and rugged avalanche performance are non-negotiable.

FAQ

What is the maximum continuous drain current for STE88N65M5 at 100 °C case temperature?

The maximum continuous drain current is 55.7 A at T_C = 100 °C, as specified in Table 2 of the datasheet (DocID025974 Rev 1). This derating reflects thermal limits imposed by the ISOTOP™ package's 0.253 °C/W R_thj-case and 150 °C T_j max, requiring careful heatsink design for sustained high-current operation.

Does STE88N65M5 have an integrated gate resistor or require external gate driving components?

No, STE88N65M5 has no integrated gate resistor. It requires an external series gate resistor (typically 4.7–10 Ω) to control switching speed and suppress oscillation, plus a gate-to-source Zener clamp (e.g., 15 V) to prevent V_GS exceeding ±25 V absolute maximum rating during transients.

Can STE88N65M5 replace IGBTs in 650 V inverter applications?

Yes - its 88 A continuous current, 650 V V_DS, and 2000 mJ avalanche rating make it viable for IGBT replacement in 8–16 kHz motor drives. However, unlike IGBTs, it lacks built-in short-circuit withstand time; external desaturation protection is mandatory for fault conditions.

Is the ISOTOP™ package RoHS-compliant and lead-free?

Yes, the ISOTOP™ package for STE88N65M5 meets RoHS Directive 2011/65/EU and is lead-free. ST confirms ECOPACK® compliance in Section 4 of the datasheet, with full material declarations available via ST's quality portal upon request.