STMicroelectronics STF100N10F7

Overview

STF100N10F7 from STMicroelectronics is an N-channel 100 V, 8.0 mΩ (max) Power MOSFET in TO-220FP package, rated for 45 A continuous drain current at T_C = 25 °C and 32 A at 100 °C, with 180 A pulsed drain capability and 30 W total power dissipation. It employs STripFET F7 trench-gate technology for low R_DS(on), reduced gate charge (61 nC), and high avalanche ruggedness (400 mJ), targeting high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the STF100N10F7 datasheet, STF100N10F7 pinout, STF100N10F7 application, or STF100N10F7 equivalent, key selection considerations include its 8.0 mΩ on-resistance at 10 V gate drive, 36 pF reverse transfer capacitance for EMI immunity, 1.25 °C/W junction-to-case thermal resistance, and TO-220FP insulated package with 2.5 kV RMS isolation rating.

Technical Context

This device implements a high-density trench-gate structure optimized for switching efficiency: Crss/Ciss ratio of 36/4369 ≈ 0.0082 minimizes Miller-induced turn-on risk, while Qgd/Qg = 13/61 ≈ 21% supports clean hard-switching transitions. Its 100 V V_DS rating and 175 °C max junction temperature enable operation in 48 V industrial bus and automotive 12–48 V systems.

The TO-220FP package integrates an insulated tab (2.5 kV RMS isolation), enabling direct heatsink mounting without insulating pads, and delivers 1.25 °C/W R_thJC - significantly lower than standard TO-220 (1.0 °C/W) due to enhanced thermal path geometry - while maintaining 5 °C/W R_thJA on PCB.

Key Specifications

Pinout & Package

TO-220FP package with insulated tab (2.5 kV RMS isolation), 3-pin configuration, vertical mounting orientation, and integral heatsink interface. Tab is electrically isolated from all leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V Power MOSFET applications.

Compared with STP100N10F7, STF100N10F7 trades 0.25 °C/W higher R_thJC for integrated isolation - eliminating insulator BOM and assembly risk. Versus IRF540N, it delivers 5.5× lower R_DS(on) and guaranteed 400 mJ avalanche capability, enabling higher power density and field reliability.

Availability

STF100N10F7 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and automotive body control modules requiring stable component supply across multi-year production cycles.

Supply support for STF100N10F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STF100N10F7 belongs to the STripFET F7 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 24–48 V industrial and automotive power systems where low conduction loss, fast switching, and ruggedness are mandatory.

FAQ

What is the maximum safe operating area (SOA) for STF100N10F7 at 100 °C case temperature?

At T_C = 100 °C, the continuous drain current is derated to 32 A, and the SOA is limited by R_DS(on) at pulse widths >10 ms. For 100 µs pulses, the device supports up to 180 A at V_DS ≤ 20 V per Figure 3 in DS9291 Rev 6 - verified by ST's SOA curves for TO-220FP package.

Can STF100N10F7 be used in avalanche mode for repetitive operation?

No - the 400 mJ E_AS rating is specified for single-pulse conditions only. Repetitive avalanche operation is not characterized or guaranteed; sustained inductive energy must be clamped externally using TVS diodes or RCD networks per ST application note AN437.

Is the TO-220FP package lead-free and RoHS-compliant?

Yes - STF100N10F7 is manufactured in ECOPACK2-compliant TO-220FP packages, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements, with matte tin plating on leads and halogen-free molding compound.

What is the recommended gate resistor value for 200 kHz hard-switching in a half-bridge configuration?

For 200 kHz operation with UCC27531 driver, a 4.7 Ω gate resistor is validated in ST's reference design (AN5052), achieving 27 ns t_d(on), 40 ns t_r, 46 ns t_d(off), and 15 ns t_f - balancing switching speed, gate oscillation damping, and driver stress.