STMicroelectronics STF10LN80K5

Overview

STF10LN80K5 from STMicroelectronics is an N-channel 800 V, 550 mΩ typ. (630 mΩ max.), 8 A MDmesh K5 Power MOSFET in TO-220FP package, featuring ultra-low gate charge (15 nC), 100% avalanche tested, and Zener-protected gate. It delivers high power density for high-voltage switching in industrial SMPS and PFC stages.

For engineers reviewing the STF10LN80K5 datasheet, STF10LN80K5 pinout, STF10LN80K5 application, or STF10LN80K5 equivalent, key selection criteria include its 800 V V_DS, 550 mΩ R_DS(on) at 10 V_GS, 15 nC Q_g, 2.5 kV insulation rating, and 240 mJ E_AS - all critical for rugged, high-efficiency HV converter design.

Technical Context

This device uses ST's proprietary MDmesh K5 vertical structure to simultaneously reduce R_DS(on) and gate charge while maintaining 800 V breakdown. Its 5 Ω/W R_thJC and 2.5 kV isolation support direct heatsink mounting without additional insulation.

The integrated body diode exhibits 350 ns t_rr at 25 °C and 505 ns at 150 °C, with 3.9–5 µC Q_rr, enabling reliable operation in hard-switched PFC and resonant topologies where diode recovery stress is critical.

Key Specifications

Pinout & Package

TO-220FP (Type B) package: insulated backside, single in-line 3-pin configuration with integral heatsink tab. Mounting hole diameter 3.0–3.2 mm; case-to-heatsink thermal resistance optimized for direct metal contact.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW12NK80Z and IPP60R099C7, STF10LN80K5 uniquely combines 800 V rating, 2.5 kV isolation, Zener gate protection, and 100% avalanche testing - making it the only option qualified for safety-critical, high-reliability 400 V AC-input industrial power conversion without design compromises.

Availability

STF10LN80K5 is available at Aetrix Electronics and suitable for industrial SMPS, telecom rectifiers, and PFC boost stages requiring stable component supply, long-lifecycle assurance, and certified high-voltage reliability.

Supply support for STF10LN80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline power conversion in industrial and telecom infrastructure.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF10LN80K5 supports 5 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10993 Rev 4. This derating reflects thermal limits of the TO-220FP package and ensures safe operation within the SOA boundary at elevated temperatures.

Does this MOSFET require external gate protection?

No - the STF10LN80K5 integrates bidirectional Zener protection between gate and source, rated for ±30 V_GS. This eliminates the need for external TVS diodes in typical industrial layouts, provided PCB layout minimizes inductive gate loops.

How is the 2.5 kV insulation rating applied in practice?

The 2.5 kV RMS insulation withstand voltage applies from all three leads (D, G, S) to the external heatsink surface for 1 second at 25 °C. It permits direct metal-to-metal mounting without insulating pads, reducing thermal resistance by ~1.2 °C/W versus insulated mounting.

What is the typical reverse recovery charge of the body diode?

The body diode's reverse recovery charge is 3.9 µC at T_J = 25 °C and 5 µC at T_J = 150 °C, measured under ISD = 8 A, di/dt = 100 A/µs, and VDD = 60 V. These values are critical for estimating commutation loss in hard-switched topologies.