STMicroelectronics STF10N105K5

Overview

STF10N105K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET using MDmesh K5 technology, rated for 1050 V V_DS, 1.3 Ω max R_DS(on) at 10 V V_GS, and 6 A continuous drain current in TO-220FP package. It features ultra-low gate charge (21.5 nC), Zener-protected gate, and 100% avalanche tested - designed for high-efficiency flyback and resonant converters operating above 800 V DC bus.

For engineers reviewing the STF10N105K5 datasheet, STF10N105K5 pinout, STF10N105K5 application, or STF10N105K5 equivalent, key selection criteria include its 1050 V breakdown voltage, 1.3 Ω on-resistance at 3 A, 21.5 nC total gate charge, 140 mJ single-pulse avalanche energy, and TO-220FP thermal resistance of 0.96 °C/W junction-to-case.

Technical Context

This MOSFET employs ST's proprietary MDmesh K5 vertical superjunction structure to achieve ultra-low R_DS(on) × Q_g figure of merit, enabling high power density in high-voltage switching topologies. Its Zener-protected gate ensures robustness against transient overvoltage during gate drive, while 100% unclamped inductive switching (UIS) testing validates ruggedness under real-world fault conditions.

The device supports fast switching with 19 ns turn-on delay, 8 ns rise time, and 50 ns turn-off delay under 525 V/3 A resistive load conditions. Its source-drain diode exhibits 345 ns reverse recovery time and 3.53 µC Q_rr at 25 °C, making it suitable for quasi-resonant and LLC converters where body diode conduction occurs.

Key Specifications

Pinout & Package

STF10N105K5 is housed in a TO-220FP (Full-Pak) package with insulated tab, enabling direct mounting to heatsinks without isolation hardware. The plastic body isolates the drain-connected tab from the mounting surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Compared with STP10N105K5 and STW10N105K5, STF10N105K5 offers the lowest system-level thermal resistance in compact form factor due to TO-220FP's insulated tab - delivering best-in-class power density for space-constrained 100–250 W industrial power supplies.

Availability

STF10N105K5 is available at Aetrix Electronics and suitable for industrial flyback converters, server PSU hold-up circuits, capacitor-input PFC pre-regulators, and medical X-ray generator switches requiring stable component supply and long lifecycle support.

Supply support for STF10N105K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive ICs with manufacturing in Europe and Asia.

This device belongs to ST's MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for >800 V offline switching applications demanding high efficiency, avalanche ruggedness, and compact thermal design.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF10N105K5 supports 3.78 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10606 Rev 3. This derating reflects thermal limitations of the TO-220FP package, not silicon capability - actual current handling depends on heatsink design and ambient airflow.

Does STF10N105K5 require external gate protection?

No. The device integrates a Zener diode between gate and source, clamping V_GS to ±20 V. This eliminates the need for external gate protection components in typical gate driver circuits, provided the driver output does not exceed ±30 V absolute maximum rating.

How does the TO-220FP package differ electrically from standard TO-220?

The TO-220FP variant features an electrically insulated metal tab (drain-connected) with 2.5 kV RMS isolation rating. Unlike standard TO-220, it allows direct mounting to grounded heatsinks without additional insulating hardware, reducing thermal resistance by ~0.2–0.3 °C/W in practical implementations.

Can STF10N105K5 replace STF10N105K3 in existing designs?

No - STF10N105K3 is a legacy MDmesh K3 device with higher R_DS(on) (1.8 Ω) and Q_g (32 nC). While pin-compatible, substituting STF10N105K5 reduces conduction and switching losses but may require gate driver slew rate verification due to lower input capacitance (545 pF vs. 720 pF).