STMicroelectronics STF10N60DM2

Overview

STF10N60DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM2 fast-recovery diode series, rated at 600 V V_DS, 440 mΩ typ. R_DS(on), and 8 A continuous drain current at T_C = 25 °C. It integrates a Zener-protected gate and features extremely low Q_g (15 nC) and C_iss (529 pF), enabling high-frequency switching in bridge topologies and ZVS phase-shift converters.

For engineers reviewing the STF10N60DM2 datasheet, STF10N60DM2 pinout, STF10N60DM2 application, or STF10N60DM2 equivalent, key selection criteria include its 90 ns trr, 40 V/ns diode dv/dt ruggedness, 100% avalanche-tested reliability, and TO-220FP insulated package with 2.5 kV RMS isolation rating.

Technical Context

This MOSFET employs ST's MDmesh DM2 silicon technology to simultaneously minimize conduction loss (via ultra-low R_DS(on)) and switching loss (via fast-recovery body diode with Q_rr = 225 nC at 25 °C). Its gate structure delivers low input capacitance and high dv/dt immunity-50 V/ns MOSFET ruggedness under V_DD ≤ 480 V conditions.

The integrated body diode is optimized for hard-switched and resonant topologies: trr remains stable up to 190 ns at T_J = 150 °C, and E_AS = 300 mJ ensures robust unclamped inductive switching capability without external snubbers.

Key Specifications

Pinout & Package

Supplied in TO-220FP (Type B) package: insulated plastic case with integral heatsink mounting flange, 2.5 kV RMS isolation rating, and footprint compatible with standard TO-220 heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STF10N60DM6 and IPP60R099C7, STF10N60DM2 delivers optimal balance of low gate charge, proven fast-recovery diode integration, and cost-effective TO-220FP packaging-making it ideal for mid-power telecom and server PSUs where reliability and ease of implementation are prioritized over marginal efficiency gains.

Availability

STF10N60DM2 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, ZVS phase-shift converters, and telecom rectifier modules requiring stable component supply and long-term lifecycle support.

Supply support for STF10N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The MDmesh DM2 product line targets high-efficiency AC-DC and DC-DC conversion, specifically engineered to replace older superjunction MOSFETs in demanding resonant and phase-shifted topologies while maintaining robustness and manufacturability.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF10N60DM2 supports 5 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS11668 Rev 2. This derating reflects thermal limits of the TO-220FP package with R_thJC = 5 °C/W; actual achievable current depends on heatsink performance and ambient conditions.

Does the body diode require external snubbering in hard-switched bridge applications?

No external snubber is required for typical hard-switched operation due to the device's 90 ns trr and 40 V/ns diode dv/dt rating. However, in high-di/dt (>500 A/µs) or high-V_DD (>400 V) conditions, a small RC network across D–S may further suppress ringing per Figure 15 test circuit guidelines.

Can STF10N60DM2 be used as a direct replacement for STF10N60M2?

No-it is not a drop-in replacement. While both share the same package and voltage rating, STF10N60DM2 has significantly lower Q_rr (225 nC vs. 1200 nC) and trr (90 ns vs. 250 ns), requiring gate drive timing adjustments. Its lower R_DS(on) also increases peak current stress during turn-on if gate resistance is unchanged.

What is the safe operating area (SOA) limitation at 10 ms pulse width?

At t_p = 10 ms, the SOA is limited by R_DS(on) to approximately 4 A at 400 V V_DS, as shown in Figure 1. This reflects thermal constraints rather than avalanche or breakdown limits, and operation must remain within the bounded curve to avoid secondary breakdown or thermal runaway.