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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF10N62K3

Name: STF10N62K3
Brand: STMicroelectronics
SKU: STF10N62K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF10N62K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF10N62K3.pdf

Description:: MOSFET N-CH 620V 8.4A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:6,290

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Product details

Overview

STF10N62K3 from STMicroelectronics is an N-channel 620 V, 700 mΩ typ., 8.4 A MDmesh K3 Power MOSFET in TO-220FP package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial inverters. It delivers 12 V/ns dv/dt capability, 220 mJ single-pulse avalanche energy, and Zener-protected gate.

For engineers reviewing the STF10N62K3 datasheet, STF10N62K3 pinout, STF10N62K3 application, or STF10N62K3 equivalent, key selection criteria include its 620 V breakdown voltage, low 700 mΩ R_DS(on), 100% avalanche-tested ruggedness, and optimized diode reverse recovery (320 ns trr at 25 °C).

Technical Context

This device employs ST's MDmesh K3 vertical structure with enhanced charge balancing, enabling ultra-low R_DS(on) × Q_g figure-of-merit (700 mΩ × 42 nC) and reduced switching losses. Its Crss of 16 pF and Co(er) of 38 pF support fast, low-noise hard-switching up to 100 kHz.

The integrated Zener-protected gate withstands ±2.5 kV HBM ESD, while the source-drain diode exhibits improved soft recovery (Q_rr = 2 µC, I_RRM = 13 A) and low forward drop (V_SD = 1.5 V @ 8 A), reducing body-diode conduction loss in bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	620 V - supports 400 V AC mains-derived DC bus with 55 % safety margin
R_DS(on) max	750 mΩ - enables <1.5 W conduction loss at 8.4 A continuous drain current
I_D (T_C = 25 °C)	8.4 A - defines thermal design basis for heatsink sizing in TO-220FP mounting
E_AS	220 mJ - ensures robust unclamped inductive switching survival in flyback/PFC circuits
dv/dt rating	12 V/ns - prevents spurious turn-on in high-dV/dt environments like motor drives
Q_g	42 nC - determines gate driver peak current requirement (~1.8 A for 23 ns rise time)
trr	320 ns - limits commutation loss and EMI in synchronous rectification and half-bridge operation

Pinout & Package

TO-220FP package: insulated case, vertical mounting, single heat sink interface. Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S). Case isolation rated at 2.5 kV RMS.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate control input	Zener-protected; requires ≤±30 V drive; 3.5 Ω intrinsic gate resistance affects Miller plateau timing
Pin 2 (D)	High-voltage drain node	Connected to primary-side high-side switch node; carries full 620 V blocking and pulsed 33.6 A current
Pin 3 (S)	Source reference and return path	Serves as power ground reference for gate drive; carries full load current and diode reverse recovery charge

Key Features

Feature	Design Value
100% avalanche tested	Guarantees minimum 220 mJ single-pulse energy handling under unclamped inductive load conditions
Extremely high dv/dt capability	12 V/ns rating prevents false triggering in noisy high-frequency switching nodes
Very low intrinsic capacitance	C_iss = 1250 pF, C_oss = 138 pF - reduces capacitive switching loss and improves efficiency above 65 kHz
Improved diode reverse recovery	Q_rr = 2 µC, t_rr = 320 ns - lowers diode conduction loss and EMI in bridge-leg commutation
Zener-protected gate	Integrated 2.5 kV HBM ESD protection eliminates need for external gate clamping in most designs

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-efficiency 1–3 kW server power supply operating in continuous conduction mode (CCM) with 380–400 V DC bus.

IC Role / Device Role / Timing Role: Primary-side high-side switching element in LLC resonant converter half-bridge configuration.

Use Value: Low R_DS(on) (700 mΩ typ.) minimizes conduction loss at 8.4 A; 620 V rating accommodates 400 V bus + transient overshoot.

Use Scenario: Active boost PFC stage in 1.5 kW industrial motor drive front-end, operating at 70 kHz switching frequency.

IC Role / Device Role / Timing Role: Fast-switching boost switch with critical conduction mode (CrCM) and valley switching.

Use Value: 12 V/ns dv/dt immunity prevents false turn-on during zero-crossing transitions; low Crss (16 pF) reduces Miller-induced delay.

Solar Microinverter DC-DC Stage

EV Onboard Charger HV Isolation Switch

Use Scenario: DC-DC isolated boost stage in 300–600 W photovoltaic microinverter, interfacing panel output to 400 V DC link.

IC Role / Device Role / Timing Role: High-side switch in interleaved flyback topology with synchronous rectification.

Use Value: Optimized diode recovery (Q_rr = 2 µC) reduces body-diode loss during dead-time; 220 mJ E_AS handles inductive energy during fault events.

Use Scenario: High-voltage isolation switch in 6.6 kW bidirectional OBC, disconnecting battery from AC/DC conversion stage during maintenance or fault.

IC Role / Device Role / Timing Role: Static HV contactor replacement with controlled turn-on/off and built-in overvoltage clamping.

Use Value: 2.5 kV insulation withstand voltage isolates battery side from charger circuitry; Zener gate protection ensures reliability in automotive ESD environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10N62K3	Same die, TO-220 (non-FP) package; no internal insulation; R_thJC = 3.33 °C/W vs 4.17 °C/W	Requires external insulator; higher thermal conductivity but lower isolation safety margin	Select when heatsink isolation is handled externally and thermal performance is prioritized over safety certification
IPP60R190C7	600 V, 190 mΩ, 21 A; CoolMOS C7 technology; lower R_DS(on) but lower V_DS rating	Not suitable for 400 V AC-derived 600+ V bus; better for 380 V DC systems with tighter R_DS(on) targets	Select only if system DC bus is ≤550 V and conduction loss dominates over voltage margin requirements

Compared with STP10N62K3, STF10N62K3 trades 0.84 °C/W higher junction-to-case thermal resistance for 2.5 kV isolation and simplified mounting; versus IPP60R190C7, it provides 20 V higher blocking with 3.9× higher R_DS(on), making it optimal for cost-sensitive 620 V applications where ruggedness outweighs ultra-low conduction loss.

Availability

STF10N62K3 is available at Aetrix Electronics and suitable for offline SMPS, industrial PFC modules, solar microinverter DC-DC stages, and EV onboard charger isolation circuits requiring stable component supply and long-lifecycle support.

Supply support for STF10N62K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.

The MDmesh K3 product line was engineered specifically for high-voltage, high-efficiency switching in industrial power supplies and renewable energy converters, emphasizing avalanche ruggedness and dynamic performance over raw current density.

FAQ

What is the maximum safe operating temperature for STF10N62K3?

The STF10N62K3 has a specified operating junction temperature range of –55 °C to 150 °C. Its R_thJC is 4.17 °C/W, so at 30 W total power dissipation and 25 °C case temperature, junction temperature reaches 150.1 °C - thus derating is required above 25 °C case. Thermal design must ensure T_J stays ≤150 °C under worst-case load and ambient conditions.

Can STF10N62K3 be used in synchronous rectification?

No - STF10N62K3 is an N-channel high-side switch optimized for hard-switched topologies, not synchronous rectification. Its body diode recovery (320 ns trr) is fast for a 620 V MOSFET but lacks the ultra-soft recovery and low V_SD (<0.8 V) required for efficient SR. Dedicated SR controllers paired with logic-level 100–200 V MOSFETs are recommended instead.

Does STF10N62K3 require a gate resistor for stability?

Yes - a gate resistor (typically 4.7–10 Ω) is required to dampen ringing caused by gate loop inductance interacting with C_iss (1250 pF) and R_g (3.5 Ω). Without it, parasitic oscillation during Miller plateau can cause shoot-through or localized overheating. Layout must minimize gate trace length and use Kelvin source connection for high-current stability.

Is STF10N62K3 RoHS and REACH compliant?

Yes - STF10N62K3 is manufactured in ST's ECOPACK2-compliant process and meets RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The TO-220FP package uses lead-free terminations and halogen-free molding compound, with full compliance documentation available via ST's quality portal.

STF10N62K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 620 V

Current - Continuous Drain (Id) @ 25°C:: 8.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 750mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1250 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF10N62K3 FAQ

1.How can I place an order for STF10N62K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF10N62K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF10N62K3 reliable?

The price and inventory of STF10N62K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF10N62K3 is usually 5 days.

3.What payment methods are accepted for STF10N62K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF10N62K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF10N62K3?

STF10N62K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF10N62K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF10N62K3?

For technical support, including STF10N62K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF10N62K3 requirements.

6.How does Aetrix verify that STF10N62K3 is sourced from the original manufacturer or authorized distributors?

All STF10N62K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF10N62K3 meets industry standards.

7.What is the process for return or replacement of STF10N62K3?

All STF10N62K3 units undergo pre-shipment inspection (PSI). If there is an issue with STF10N62K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF10N62K3 part is unused and in its original packaging.

Return procedure for STF10N62K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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