STMicroelectronics STF10N80K5

Overview

STF10N80K5 from STMicroelectronics is an N-channel 800 V, 470 mΩ typ. (600 mΩ max), 9 A MDmesh K5 Power MOSFET in TO-220FP package, featuring ultra-low gate charge (22 nC), 100% avalanche tested, and Zener-protected gate. It delivers high power density for high-voltage switching in offline SMPS and industrial motor drives.

For engineers reviewing the STF10N80K5 datasheet, STF10N80K5 pinout, STF10N80K5 application, or STF10N80K5 equivalent, this device is selected for high-efficiency, high-reliability 640 V DC bus switching where low R_DS(on), rugged dv/dt performance (50 V/ns), and repetitive avalanche capability (3 A, 130 mJ) are critical.

Technical Context

This MOSFET uses ST's proprietary MDmesh K5 vertical structure to achieve a FoM (R_DS(on) × Q_g) of ~13.2 Ω·nC, enabling superior efficiency in hard-switched PFC and resonant LLC topologies. Its 2.5 kV RMS insulation withstand voltage supports reinforced isolation in AC-DC front-ends.

The integrated body diode exhibits 370 ns reverse recovery time (T_J = 25 °C) and 4.58 µC Q_rr, with rated source-drain current up to 9 A continuous and 36 A pulsed-enabling synchronous rectification replacement in high-voltage flyback and forward converters.

Key Specifications

Pinout & Package

TO-220FP (Type B) package: insulated plastic case with integral heatsink tab; leads are non-isolated but electrically isolated from heatsink via molded plastic barrier. Mounting hole diameter: 3.0–3.2 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STF12N80K5, STF10N80K5 trades 3 A current headroom and 50 mΩ lower R_DS(on) for reduced gate drive burden and tighter thermal design margins; versus IPP60R099C7, it provides essential 800 V capability and certified avalanche robustness at the cost of higher on-resistance in sub-600 V applications.

Availability

STF10N80K5 is available at Aetrix Electronics and suitable for industrial motor drives, server SMPS, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STF10N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600–800 V offline power conversion systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF10N80K5 supports 6 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10410 Rev 6. This derating reflects thermal limits of the TO-220FP package and ensures safe operation within the SOA boundary at elevated temperatures without exceeding 150 °C junction temperature.

Does the device include an integrated body diode, and what are its key recovery parameters?

Yes, it features a monolithic source-drain diode rated for 9 A continuous and 36 A pulsed current. At T_J = 25 °C, reverse recovery time (t_rr) is 370 ns with 4.58 µC Q_rr and 25 A I_RRM, per Table 7. These values increase to 520 ns and 5.88 µC at 150 °C, confirming usable performance across full industrial temperature range.

Is the TO-220FP package electrically insulated, and what is its isolation voltage rating?

The TO-220FP package provides electrical insulation between all three leads and the heatsink mounting surface, with a guaranteed 2.5 kV RMS insulation withstand voltage (1 s duration, T_C = 25 °C), as defined in Table 1. This qualifies it for reinforced isolation in Class II AC-DC power supplies per IEC 62368-1.

How does the MDmesh K5 technology improve performance over previous generations?

MDmesh K5 reduces specific on-resistance (R_DS(on) × area) by optimizing the vertical trench structure and charge compensation layers. Compared to K3, it achieves ~35% lower R_DS(on) at 800 V and cuts Q_g by ~20%, directly improving figure-of-merit (FoM) to ~13.2 Ω·nC-enabling higher efficiency and power density in compact, high-frequency converters.