STMicroelectronics STF10NK50Z
- Part No.:
- STF10NK50Z
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
STF10NK50Z.pdf
- Description:
- MOSFET N-CH 500V 9A TO220FP
- Quantity:
- Payment:

- Shipping:

Inventory:6,347
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Product details
Overview
STF10NK50Z from STMicroelectronics is an N-channel enhancement-mode Zener-protected SuperMESH™ power MOSFET in TO-220FP package, rated for 500 V VDSS, 9 A continuous drain current at TC = 25°C, and 0.55 Ω typical RDS(on). It integrates gate-source Zener diodes for ESD and transient protection and is optimized for high-speed, high-current switching in offline SMPS and PFC stages.
For engineers reviewing the STF10NK50Z datasheet, STF10NK50Z pinout, STF10NK50Z application, or STF10NK50Z equivalent, key selection criteria include its 4.5 V gate threshold voltage, 39.2 nC total gate charge, 100% avalanche tested ruggedness, built-in Zener protection, and TO-220FP thermal resistance of 4.2 °C/W (junction-to-case).
Technical Context
This MOSFET employs ST's strip-based SuperMESH™ layout to minimize RDS(on) while maximizing dv/dt immunity (4.5 V/ns) and reducing intrinsic capacitances-Ciss = 1219 pF, Coss = 159 pF, Crss = 40 pF. Its internal gate-source Zener diodes clamp VGS to ±30 V, eliminating need for external protection.
Designed for unclamped inductive switching, it delivers 230 mJ single-pulse avalanche energy (EAS) at Tj = 25°C with IAR = 9 A, and supports fast switching via low Qgd/Qg ratio (20.7/39.2 nC), enabling efficient hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 500 V - Withstands full mains-referenced DC bus in 400 V AC input offline converters without breakdown |
| RDS(on) (typ) | 0.55 Ω @ VGS = 10 V, ID = 4.5 A - Enables <1 W conduction loss at 9 A, supporting compact heatsink design |
| ID (cont) | 9 A @ TC = 25°C - Sustains peak load currents in 100–200 W PFC and adapter primary switches |
| Qg | 39.2 nC @ VDD = 400 V, ID = 9 A - Determines gate driver power requirement and switching speed in hard-switched circuits |
| dv/dt capability | 4.5 V/ns - Resists false turn-on during high-slew-rate voltage transients in bridge-leg and flyback configurations |
| EAS | 230 mJ - Absorbs inductive energy during overcurrent events without failure, reducing need for snubbers |
| Tj range | −55 to +150 °C - Supports operation in sealed industrial enclosures and high-ambient lighting ballasts |
Pinout & Package
STF10NK50Z uses the TO-220FP (Full-Pak) package: insulated plastic case with integral heat sink tab, 3-pin vertical lead frame, and creepage/clearance optimized for 2500 VDC isolation. Mounting hole enables direct PCB heatsinking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Receives 10 V logic-level drive; protected by integrated ±30 V Zener diode to prevent oxide rupture |
| 2 (Drain) | High-side power output | Connected to DC bus or transformer primary; carries full switched current and withstands 500 V blocking |
| 3 (Source) | Power return / reference node | Serves as local ground for gate drive; source-drain diode enables freewheeling in buck/PFC configurations |
Key Features
| Feature | Design Value |
|---|---|
| Zener-protected gate | Integrated back-to-back Zeners clamp VGS to ±30 V, eliminating external TVS and reducing BOM count |
| 100% avalanche tested | Each unit validated for repetitive and non-repetitive avalanche stress up to IAR = 9 A, ensuring field reliability |
| Low gate charge | Qg = 39.2 nC and Qgd/Qg = 53% enable faster switching with lower driver losses than standard 500 V MOSFETs |
| High dv/dt immunity | 4.5 V/ns rating prevents spurious turn-on during fast voltage transitions in half-bridge and LLC resonant circuits |
| SuperMESH™ layout | Optimized strip geometry reduces RDS(on) by ~25% vs prior PowerMESH™ generation while maintaining SOA integrity |
Applications
| Offline AC-DC Adapters | Active PFC Circuits |
|---|---|
Use Scenario: 65–150 W universal-input wall adapters with active clamp or quasi-resonant flyback topology. IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400 V DC bus and 9 A peak current at 65–135 kHz. Use Value: Low RDS(on) and 230 mJ EAS reduce conduction loss and improve surge immunity during line dips and overloads. | Use Scenario: Boost-type active PFC stage in LED drivers and industrial power supplies operating at 50–100 kHz. IC Role / Device Role / Timing Role: Fast-switching boost switch managing 9 A average current and 500 V blocking under varying load conditions. Use Value: High dv/dt immunity and low Coss (159 pF) minimize switching loss and EMI generation during zero-voltage transition. |
| Electronic Ballasts | Industrial Motor Drives |
Use Scenario: High-frequency fluorescent lamp ballasts requiring robust 500 V switching at 25–65 kHz with high reliability. IC Role / Device Role / Timing Role: Half-bridge upper switch driving resonant tank; subjected to repeated avalanche stress during lamp ignition. Use Value: 100% avalanche testing and −55 to +150 °C Tj range ensure long-term operation in thermally constrained fixtures. | Use Scenario: Low-power (<500 W) BLDC motor inverters in pumps, fans, and HVAC systems with 230 V AC input. IC Role / Device Role / Timing Role: Phase-leg switch in 3-phase inverter, handling 9 A RMS current and commutation-induced voltage spikes. Use Value: Integrated gate Zener and 4.2 °C/W Rth(j-c) allow direct heatsink mounting and eliminate gate protection components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP10NK50Z | TO-220 (non-isolated); higher PTOT = 125 W; Rth(j-c) = 1.0 °C/W | Requires external insulator for chassis-grounded heatsinks; better for high-power, forced-air-cooled designs | Select when thermal budget allows larger heatsink and isolation is managed externally |
| FDPF10N50 | ON Semiconductor FDmesh™; RDS(on) = 0.65 Ω; Qg = 42 nC; no integrated Zener | Lacks gate protection; requires external gate clamp; slightly higher conduction loss | Choose only if gate drive includes discrete clamping and system-level ESD protection is already implemented |
Compared with STP10NK50Z, STF10NK50Z trades 95 W dissipation headroom for built-in isolation and simplified mechanical integration; versus FDPF10N50, it offers superior ruggedness and reduced component count at the cost of marginally higher RDS(on).
Availability
STF10NK50Z is available at Aetrix Electronics and suitable for offline AC-DC adapters, active PFC modules, and electronic ballasts requiring stable component supply across extended production lifecycles.
Supply support for STF10NK50Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering silicon solutions for automotive, industrial, power, and consumer markets since 1987.
The SuperMESH™ MOSFET product line targets high-efficiency, high-reliability offline power conversion-specifically engineered to replace legacy planar devices in SMPS, PFC, and lighting with improved RDS(on), dv/dt immunity, and avalanche ruggedness.
FAQ
What is the maximum safe gate-source voltage for STF10NK50Z?
The absolute maximum VGS is ±30 V, enforced by integrated back-to-back Zener diodes. Operation beyond this risks permanent gate oxide damage. Gate drive must be referenced to source, and floating gate drivers require careful layout to avoid exceeding this limit during transients.
Can STF10NK50Z replace STP10NK50Z in existing designs?
Yes, but with thermal and mounting considerations: STF10NK50Z has TO-220FP insulation (2500 VDC isolation) and lower PTOT (30 W vs 125 W). It fits same footprint but requires verification of junction temperature rise and gate drive compatibility due to identical electrical specs.
Does STF10NK50Z require an external gate resistor for stability?
A gate resistor (typically 4.7–22 Ω) is recommended to dampen ringing and control dV/dt during switching. The device's low Qgd/Qg ratio makes it less prone to oscillation, but layout parasitics and driver impedance still necessitate empirical tuning per application.
Is STF10NK50Z compliant with RoHS and REACH regulations?
Yes-STF10NK50Z is manufactured in ECOPACK®-compliant TO-220FP packaging with lead-free second-level interconnect, fully conforming to RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, as confirmed in ST's official documentation dated September 2005.
STF10NK50Z Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- SuperMESH™
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 700mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 39.2 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1219 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 30W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
STF10NK50Z FAQ
1.How can I place an order for STF10NK50Z through Aetrix?
Please submit a Request for Quotation (RFQ) for STF10NK50Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STF10NK50Z reliable?
The price and inventory of STF10NK50Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF10NK50Z is usually 5 days.
3.What payment methods are accepted for STF10NK50Z?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF10NK50Z transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STF10NK50Z?
STF10NK50Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STF10NK50Z order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STF10NK50Z?
For technical support, including STF10NK50Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF10NK50Z requirements.
6.How does Aetrix verify that STF10NK50Z is sourced from the original manufacturer or authorized distributors?
All STF10NK50Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF10NK50Z meets industry standards.
7.What is the process for return or replacement of STF10NK50Z?
All STF10NK50Z units undergo pre-shipment inspection (PSI). If there is an issue with STF10NK50Z, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STF10NK50Z part is unused and in its original packaging.
Return procedure for STF10NK50Z:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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