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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF10NM50N

Name: STF10NM50N
Brand: STMicroelectronics
SKU: STF10NM50N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF10NM50N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF10NM50N.pdf

Description:: MOSFET N-CH 500V 7A TO220FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STF10NM50N from STMicroelectronics is an N-channel 500 V, 7 A, 0.53 Ω MDmesh™ II Power MOSFET in TO-220FP package, designed for high-efficiency switching converters operating at high voltage and moderate current. It features 100% avalanche tested ruggedness, low gate charge (17 nC), and low input capacitance (450 pF), enabling fast switching with reduced driver loss in SMPS and PFC stages.

For engineers reviewing the STF10NM50N datasheet, STF10NM50N pinout, STF10NM50N application, or STF10NM50N equivalent, this device is selected for high-voltage DC-DC conversion, offline flyback/forward topologies, and industrial AC-DC power supplies where R_DS(on), Q_g, and avalanche robustness are critical selection criteria.

Technical Context

This MOSFET employs ST's second-generation MDmesh™ vertical strip architecture to minimize conduction and switching losses simultaneously. Its 500 V V_DSS rating supports operation across universal AC mains (85–265 VAC) with sufficient margin for transient overvoltage handling in unregulated inputs.

The TO-220FP package provides insulated mounting (2500 V RMS isolation) and a thermal resistance of 5 °C/W (junction-to-case), enabling reliable 25 W continuous dissipation at T_C = 25 °C without heatsink derating beyond typical board-level constraints.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - Withstands peak line voltages up to 375 VDC with 33% safety margin in 265 VAC applications.
R_DS(on) max	0.63 Ω @ V_GS = 10 V, I_D = 3.5 A - Enables <1.5 W conduction loss at 7 A continuous drain current.
Q_g	17 nC - Reduces gate drive power and enables use of low-power drivers in high-frequency (>100 kHz) converters.
C_iss	450 pF @ V_DS = 50 V - Low input capacitance minimizes Miller effect and improves switching controllability.
E_AS	143 mJ - Confirmed single-pulse avalanche energy supports unclamped inductive switching in relay drivers and motor control.
T_j max	150 °C - Allows operation in sealed enclosures or high-ambient industrial environments with proper thermal design.
I_D (T_C = 100 °C)	5 A - Specifies usable current derating under sustained case temperatures common in enclosed power supplies.

Pinout & Package

STF10NM50N uses the TO-220FP (Full-Pak) package: insulated plastic housing with metal tab electrically isolated from drain, rated for 2500 V RMS insulation between leads and heat sink. The package has three terminals arranged linearly (Drain–Gate–Source), with Drain connected to the large central tab for efficient thermal transfer while maintaining electrical isolation.

Pin/Terminal	Circuit Role	Design Meaning
Tab (center)	Drain (D)	High-voltage power path terminal; thermally coupled to heatsink but electrically isolated-enables direct mounting without insulator washer.
Lead 1 (left)	Gate (G)	Low-impedance control input requiring ≤10 V drive; gate input resistance is 4.7 Ω, minimizing ringing in high-dV/dt environments.
Lead 3 (right)	Source (S)	Power return node; referenced to ground in low-side switch configurations; source-drain diode V_SD = 1.3 V enables synchronous rectification support.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees robustness against unclamped inductive switching events without derating-critical for relay/snubberless designs.
Low gate charge (Q_g = 17 nC)	Reduces gate driver power consumption and switching transition time, improving efficiency in 65–300 kHz SMPS designs.
Low input capacitance (C_iss = 450 pF)	Minimizes Miller-induced turn-on risk during high dv/dt commutation, enhancing reliability in hard-switched topologies.
MDmesh™ II vertical structure	Delivers industry-leading R_DS(on) × Q_g figure-of-merit (≈8.9 Ω·nC), optimizing trade-off between conduction and switching loss.
Insulated TO-220FP package	Eliminates need for isolating pads or sil-pads when mounting to grounded heatsinks-reducing BOM cost and thermal interface resistance.

Applications

Industrial AC-DC Power Supplies

Server & Telecom SMPS

Use Scenario: Primary-side switch in 150–300 W offline flyback or forward converters with universal AC input.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary; operates at 65–130 kHz with zero-voltage switching assist.

Use Value: 0.53 Ω R_DS(on) limits conduction loss to <2.6 W at 7 A, while 143 mJ E_AS ensures reliability during output short-circuit recovery.

Use Scenario: Active clamp forward or LLC resonant converter primary switch in 48 V telecom rectifiers.

IC Role / Device Role / Timing Role: Main switching element handling 400 V bus voltage; synchronized with controller for precise dead-time control.

Use Value: 17 nC Q_g enables low-loss gate driving with integrated half-bridge drivers, reducing external component count and layout complexity.

LED Driver Power Stages

Industrial Motor Control

Use Scenario: Constant-current buck or buck-boost stage in high-bay LED drivers with 300–400 VDC input.

IC Role / Device Role / Timing Role: Regulating switch modulating average LED current; duty cycle adjusted via PWM or analog dimming interface.

Use Value: 500 V rating accommodates 375 VDC bus with margin for line surges; 1.3 V source-drain diode forward drop supports freewheeling path without external Schottky.

Use Scenario: Low-side switch in 3-phase inverter half-bridge for 1–2 kW BLDC motor drives in HVAC or pumps.

IC Role / Device Role / Timing Role: Ground-referenced switching node controlling phase current flow; driven by isolated gate driver with <100 ns propagation delay.

Use Value: TO-220FP insulation allows direct heatsink mounting on shared chassis ground, simplifying thermal management in compact inverters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NM50N	Same die, TO-220 (non-isolated) package; R_thj-case = 1.79 °C/W vs. 5 °C/W for STF10NM50N.	Requires insulating pad when mounted to grounded heatsink; higher thermal performance but added assembly step.	Select when maximum thermal efficiency is prioritized and isolation can be implemented externally.
FQP10N50CT	500 V, 10 A, R_DS(on) = 0.65 Ω, Q_g = 22 nC; TO-220 package, non-isolated.	Higher gate charge increases driver loss; no avalanche rating specified in datasheet.	Acceptable for cost-sensitive, non-avalanche-critical applications where 10 A rating adds margin.

Compared with STP10NM50N, STF10NM50N trades 3.2 °C/W higher junction-to-case thermal resistance for 2500 V isolation-simplifying mechanical design at modest thermal cost. Versus FQP10N50CT, it offers verified avalanche ruggedness and 29% lower Q_g, making it preferable for high-reliability, high-frequency SMPS.

Availability

STF10NM50N is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server SMPS, and LED driver power stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STF10NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching applications including offline SMPS, PFC circuits, and industrial motor drives.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF10NM50N supports 5 A continuous drain current when the case temperature is maintained at 100 °C, as specified in Table 2 of the datasheet. This derating reflects safe operation within the device's SOA limits and thermal constraints of the TO-220FP package.

Does STF10NM50N require a gate resistor for stability?

Yes-a gate resistor (typically 4.7 Ω, per Figure 17 test circuit) is recommended to dampen parasitic oscillation caused by PCB trace inductance interacting with the device's 4.7 Ω gate input resistance and 450 pF C_iss, especially in high-dv/dt environments above 100 V/ns.

Can STF10NM50N replace STP10NM50N without board changes?

No-while both share identical silicon, STF10NM50N uses TO-220FP (insulated tab) versus STP10NM50N's standard TO-220 (conductive tab). Mechanical mounting, heatsink isolation, and creepage/clearance requirements differ, necessitating layout review before substitution.

What is the significance of the 2500 V RMS insulation rating?

The 2500 V RMS insulation withstand voltage (per Table 2) certifies that all three leads-including the metal tab-can sustain 2500 V RMS for 1 second relative to an external heatsink, enabling safe direct mounting to grounded metal chassis without additional insulation hardware in Class I safety designs.

STF10NM50N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 630mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 450 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF10NM50N FAQ

1.How can I place an order for STF10NM50N through Aetrix?

Please submit a Request for Quotation (RFQ) for STF10NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF10NM50N reliable?

The price and inventory of STF10NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF10NM50N is usually 5 days.

3.What payment methods are accepted for STF10NM50N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF10NM50N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF10NM50N?

STF10NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF10NM50N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF10NM50N?

For technical support, including STF10NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF10NM50N requirements.

6.How does Aetrix verify that STF10NM50N is sourced from the original manufacturer or authorized distributors?

All STF10NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF10NM50N meets industry standards.

7.What is the process for return or replacement of STF10NM50N?

All STF10NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STF10NM50N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF10NM50N part is unused and in its original packaging.

Return procedure for STF10NM50N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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