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STMicroelectronics STF10NM60N
- Part No.:
- STF10NM60N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
STF10NM60N.pdf
- Description:
- MOSFET N-CH 600V 10A TO220FP
- Quantity:
- Payment:
- Shipping:
Inventory:489
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Product details
Overview
STF10NM60N from STMicroelectronics is an N-channel 600 V, 530 mΩ typ., 10 A MDmesh II Power MOSFET in DPAK (TO-252) package, designed for high-efficiency switching converters. It features 100% avalanche tested ruggedness, low gate charge (19 nC), and low input capacitance (540 pF), enabling fast switching in SMPS, PFC stages, and industrial motor drives.
For engineers reviewing the STF10NM60N datasheet, STF10NM60N pinout, STF10NM60N application, or STF10NM60N equivalent, key selection criteria include RDS(on) at 10 V gate drive, repetitive avalanche energy (200 mJ), diode reverse recovery performance (Qrr = 2.12 µC), thermal resistance (RthJC = 1.79 °C/W), and DPAK mounting compatibility.
Technical Context
This device employs ST's second-generation MDmesh vertical strip architecture to minimize conduction and switching losses simultaneously. Its optimized cell layout delivers low RDS(on) × Qg figure-of-merit (10.1 Ω·nC), supporting high-frequency operation up to 300 kHz in hard-switched topologies.
The integrated body diode exhibits controlled reverse recovery with trr = 250 ns and IRRM = 17 A under standardized inductive load conditions (di/dt = 100 A/µs, VDD = 60 V), reducing voltage overshoot and EMI in flyback and LLC resonant converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports 400 V AC input rectified systems with 50% safety margin for surge handling |
| RDS(on) max | 550 mΩ @ VGS = 10 V, ID = 4 A - enables ≤ 2.2 W conduction loss at 10 A continuous drain current |
| Qg | 19 nC - reduces gate driver power requirement and enables use of low-cost SOT-23 drivers |
| EAS | 200 mJ - ensures robust unclamped inductive switching capability without external snubbers |
| RthJC | 1.79 °C/W - allows 70 W dissipation at TC = 25 °C, supporting compact heatsink designs |
| Ciss | 540 pF @ VDS = 50 V - minimizes Miller effect and improves dv/dt immunity during turn-off |
| tr/tf | 12 ns / 15 ns @ VDD = 300 V, ID = 4 A, RG = 4.7 Ω - supports <300 ns total switching transition time |
Pinout & Package
DPAK (TO-252) package with exposed drain tab for thermal and electrical connection; surface-mount, single-ended lead configuration; standard JEDEC MS-012AC footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | High-impedance control terminal requiring <19 nC charge for full enhancement; sensitive to ESD |
| 2 (D/TAB) | Drain / Thermal Pad | Main high-voltage power terminal and primary thermal path to PCB copper; electrically tied to drain |
| 3 (S) | Source | Power return reference for gate drive and current sensing; connects to low-side switch node |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees single-pulse ruggedness up to 200 mJ without derating, eliminating need for overvoltage clamping in cost-sensitive designs |
| Low gate charge (19 nC) | Reduces switching losses by >35% vs. legacy 600 V MOSFETs, enabling higher efficiency at 100–300 kHz |
| Low Ciss/Coss ratio | 540 pF / 44 pF = 12.3 - improves controllability during Miller plateau and reduces gate oscillation risk |
| Optimized body diode | Qrr = 2.12 µC and soft recovery reduce EMI and stress on synchronous rectifiers in secondary-side applications |
| MDmesh II vertical structure | Enables 530 mΩ RDS(on) in DPAK - 28% lower than first-gen MDmesh at same voltage rating and package |
Applications
| Server PSU Primary Switch | Industrial PFC Boost Stage |
|---|---|
Use Scenario: High-density 1U server power supply operating at 100–200 kHz with universal AC input (90–264 VAC). IC Role / Device Role / Timing Role: Main switching transistor in active clamp forward or LLC half-bridge primary side. Use Value: 550 mΩ RDS(on) and 19 nC Qg enable >95% efficiency at 1 kW output while maintaining thermal rise <45 °C on 2 oz Cu PCB. | Use Scenario: Three-phase industrial motor drive with boost-type PFC front-end handling 3 kW continuous load. IC Role / Device Role / Timing Role: Fast-switching boost switch operating at 70 kHz with interleaved dual-phase control. Use Value: 200 mJ EAS withstands line transients without failure; 250 ns trr limits diode-induced voltage spikes during zero-current switching transitions. |
| Solar Microinverter DC-DC Stage | EV Onboard Charger HV DC-DC |
Use Scenario: String-level microinverter with 600 V DC input and 250 kHz resonant LLC stage. IC Role / Device Role / Timing Role: High-side switch in asymmetrical half-bridge topology with ZVS operation. Use Value: Low Coss (44 pF) ensures reliable zero-voltage switching down to 20% load; 1.79 °C/W RthJC sustains 85 °C case temperature in sealed enclosure. | Use Scenario: 6.6 kW bidirectional OBC with dual 600 V Si MOSFET stages for DC-DC isolation. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge converter operating at 120 kHz. Use Value: Repetitive avalanche rating (4 A IAR) handles fault currents during short-circuit events without latch-up; DPAK footprint simplifies automated assembly. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP60R099C7 | 650 V, 99 mΩ, TO-220FP package; higher RDS(on) but superior SOA at high VDS | Requires larger heatsink; not surface-mount; better for linear-mode operation | Select when thermal budget permits discrete heatsinking and linear regulation is needed |
| STP10NM60ND | Same die, TO-220 package; identical RDS(on), Qg, and EAS; no exposed drain tab | Larger footprint; lower thermal performance (RthJC = 2.5 °C/W); through-hole only | Select when board space allows through-hole mounting and lower assembly cost is prioritized |
Compared with IPP60R099C7 and STP10NM60ND, STF10NM60N offers optimal balance of surface-mount compatibility, thermal performance (1.79 °C/W), and high-frequency switching efficiency-making it preferred for space-constrained, high-power-density designs where DPAK mounting is feasible.
Availability
STF10NM60N is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, solar microinverters, and EV onboard charger DC-DC stages requiring stable component supply and long-term production continuity.
Supply support for STF10NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MEMS, power, and microcontroller solutions for automotive, industrial, and consumer markets.
This device belongs to ST's MDmesh™ high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power conversion in industrial, renewable energy, and EV infrastructure applications.
FAQ
What is the maximum continuous drain current for STF10NM60N at 100 °C case temperature?
The maximum continuous drain current is 5 A at TC = 100 °C, as specified in Table 1 of DS11416 Rev 2. This derating reflects thermal limitations of the DPAK package and ensures safe operation within the SOA boundary at elevated temperatures without exceeding junction temperature limits.
Does STF10NM60N have an integrated gate resistor?
No, STF10NM60N does not include an integrated gate resistor. Its intrinsic gate resistance is 6 Ω (typ.), measured at 1 MHz with zero drain current. External gate resistors must be used for switching speed control, ringing suppression, and driver protection per application requirements.
Can STF10NM60N replace STD10NM60N in existing designs?
Yes - STF10NM60N and STD10NM60N share identical electrical specifications, pinout, and DPAK package. The "F" suffix denotes tape-and-reel packaging per DS11416 Rev 2 update; no parametric or reliability differences exist between the two order codes.
What is the recommended PCB footprint for STF10NM60N?
The recommended footprint matches JEDEC TO-252 (DPAK) type E outline per Figure 19 in DS11416 Rev 2: 6.1 mm × 6.6 mm pad for drain tab, 0.85 mm wide leads, and 2.29 mm pitch between G and S pins. Minimum 1-inch² 2 oz copper area under the drain tab is required to achieve RthJA = 50 °C/W.
STF10NM60N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 550mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 540 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
STF10NM60N FAQ
1.How can I place an order for STF10NM60N through Aetrix?
Please submit a Request for Quotation (RFQ) for STF10NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STF10NM60N reliable?
The price and inventory of STF10NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF10NM60N is usually 5 days.
3.What payment methods are accepted for STF10NM60N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF10NM60N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STF10NM60N?
STF10NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STF10NM60N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STF10NM60N?
For technical support, including STF10NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF10NM60N requirements.
6.How does Aetrix verify that STF10NM60N is sourced from the original manufacturer or authorized distributors?
All STF10NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF10NM60N meets industry standards.
7.What is the process for return or replacement of STF10NM60N?
All STF10NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STF10NM60N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STF10NM60N part is unused and in its original packaging.
Return procedure for STF10NM60N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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