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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF10NM60ND

Name: STF10NM60ND
Brand: STMicroelectronics
SKU: STF10NM60ND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF10NM60ND

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF10NM60ND.pdf

Description:: MOSFET N-CH 600V 8A TO220FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STF10NM60ND from STMicroelectronics is an N-channel 600 V, 570 mΩ typ., 8 A FDmesh II Power MOSFET in DPAK (TO-252) package, featuring fast-recovery body diode, 100% avalanche tested operation, and high dv/dt ruggedness up to 40 V/ns. It is engineered for high-efficiency bridge topologies and zero-voltage-switching (ZVS) phase-shift converters in industrial SMPS and server power supplies.

For engineers reviewing the STF10NM60ND datasheet, STF10NM60ND pinout, STF10NM60ND application, or STF10NM60ND equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g = 20 nC, t_rr = 118 ns (T_J = 25 °C), E_AS = 130 mJ, and thermal resistance R_thJC = 1.79 °C/W - all critical for hard-switched and resonant converter reliability and loss optimization.

Technical Context

This FDmesh II device employs a strip-layout vertical structure to simultaneously minimize conduction loss (R_DS(on) = 570 mΩ typ. @ V_GS = 10 V, I_D = 4 A) and switching loss (Q_gd = 11.6 nC, C_iss = 577 pF). Its fast-recovery body diode enables robust freewheeling in half-bridge configurations without external anti-parallel diodes.

The MOSFET supports unclamped inductive switching with guaranteed single-pulse avalanche energy of 130 mJ and repetitive avalanche current of 2.5 A. Its 150 °C maximum junction temperature and 40 V/ns dv/dt rating ensure stable operation under high-speed switching transients in high-density power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 400 V in 3-phase rectified systems with 50% safety margin.
R_DS(on) max	600 mΩ - Limits conduction loss to ≤19.2 W at 8 A continuous drain current (T_C = 25 °C).
Q_g	20 nC - Enables efficient gate driving with low-power controllers; reduces driver IC power dissipation.
t_rr	118 ns - Minimizes reverse recovery loss and voltage overshoot during commutation in bridge legs.
E_AS	130 mJ - Supports reliable operation under transient overloads without derating in ZVS designs.
R_thJC	1.79 °C/W - Allows 70 W power dissipation with ≤125 °C case-to-junction rise, enabling compact heatsink design.
I_D (cont)	8 A @ T_C = 25 °C - Sustains full-load current in TO-252-mounted 100–200 W SMPS without forced air.

Pinout & Package

DPAK (TO-252) package with exposed drain tab for thermal and electrical connection; surface-mount, single-ended lead configuration optimized for PCB heat spreading and low-inductance layout.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Pin 2)	Drain (D)	Primary high-side switching node; electrically and thermally connected to PCB copper pour for low R_thJA.
Pin 1	Gate (G)	Control input requiring <20 nC charge; sensitive to ESD; must be routed away from noisy power traces.
Pin 3	Source (S)	Reference node for gate drive; connects to power ground plane; carries full load current and diode recovery current.

Key Features

Feature	Design Value
Fast-recovery body diode	t_rr = 118 ns, Q_rr = 680 nC - Reduces switching loss and EMI in synchronous rectification and half-bridge freewheeling.
Low gate charge	Q_g = 20 nC - Enables use of low-cost gate drivers (e.g., STMicroelectronics STD4N60M2) without boost circuitry.
High dv/dt ruggedness	40 V/ns - Prevents false turn-on during high-slew-rate transitions in multi-kW inverters and PFC stages.
100% avalanche tested	E_AS = 130 mJ - Guarantees robustness against inductive kickback in motor drives and UPS systems.
FDmesh II technology	R_DS(on) × Q_g = 11.4 Ω·nC - Delivers superior figure-of-merit for high-frequency (>100 kHz) hard-switched topologies.

Applications

Industrial SMPS

Server PSU Half-Bridge

Use Scenario: 1–3 kW telecom rectifiers with active clamp forward or LLC resonant topology.

IC Role / Device Role / Timing Role: High-side primary switch handling 400 V DC bus with ZVS-assisted turn-on and controlled body diode commutation.

Use Value: 118 ns t_rr and 40 V/ns dv/dt rating reduce snubber losses and improve efficiency by ≥0.8% at full load vs. standard 600 V MOSFETs.

Use Scenario: Secondary-side synchronous rectification in 80 PLUS Titanium server PSUs operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Low-side switch with integrated fast body diode replacing discrete Schottky + MOSFET pair.

Use Value: Eliminates external diode, reducing BOM count and PCB area while maintaining <1.5 V forward drop at 8 A (V_SD = 1.5 V).

ZVS Phase-Shift Converter

Motor Drive Inverter Stage

Use Scenario: Isolated DC–DC modules for EV battery chargers requiring soft-switching across 0–100% load range.

IC Role / Device Role / Timing Role: Primary-side lagging-leg switch subjected to high dv/dt and reverse recovery stress during ZVS transition.

Use Value: Guaranteed 130 mJ E_AS and 2.5 A I_AS prevent failure during boundary-mode transitions and startup surges.

Use Scenario: 3-phase inverter stage in HVAC compressors and industrial pumps rated ≤2.2 kW.

IC Role / Device Role / Timing Role: Low-side IGBT replacement in 6–20 kHz PWM inverters, leveraging fast body diode for regenerative braking.

Use Value: 150 °C T_Jmax and 1.79 °C/W R_thJC support continuous 8 A operation with passive cooling in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NM60ND	TO-220 package; identical R_DS(on), Q_g, and avalanche rating; higher R_thJC (1.9 °C/W) and larger footprint.	Better suited for through-hole prototyping and lower-density layouts where heatsink mounting dominates thermal path.	Select when mechanical mounting constraints favor TO-220 or when manual soldering is required.
IPP60R099C7	650 V, 99 mΩ, 30 A; CoolMOS C7 technology; lower R_DS(on) but higher Q_g (51 nC); no specified t_rr or E_AS rating.	Targeted at high-current, high-frequency PFC and resonant converters where conduction loss dominates.	Choose only if system-level efficiency gain from lower R_DS(on) outweighs increased gate drive loss and missing avalanche guarantee.

Compared with STP10NM60ND, STF10NM60ND offers superior thermal performance in space-constrained SMT designs; versus IPP60R099C7, it trades higher R_DS(on) for verified avalanche robustness and faster body diode recovery - critical for hard-switched bridge reliability.

Availability

STF10NM60ND is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, ZVS phase-shift converters, and motor drive inverter stages requiring stable component supply and long-term production continuity.

Supply support for STF10NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs with manufacturing in Europe and Asia.

This device belongs to ST's FDmesh II high-voltage power MOSFET product line, designed specifically for high-efficiency, high-reliability switching in industrial and computing power conversion systems operating up to 600 V.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF10NM60ND supports 5 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS7103 Rev 4. This derating reflects thermal limits of the DPAK package and ensures safe operation within the SOA curve up to 1 ms pulse width.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No - the device specifies ±25 V gate-source voltage rating but operates reliably with 0 V to 10 V gate drive. A negative turn-off voltage is not required; however, a –5 V to –10 V bias improves noise immunity in high-dv/dt environments per Figure 18 test conditions.

How is the fast-recovery body diode characterized in the datasheet?

Body diode performance is defined in Table 7: t_rr = 118 ns (T_J = 25 °C), Q_rr = 680 nC, and I_RRM = 11 A under ISD = 8 A, di/dt = 100 A/µs, VDD = 60 V. These values are measured using the inductive test circuit in Figure 15 and validated across temperature.

Can STF10NM60ND replace STD10NM60ND in existing designs?

Yes - STF10NM60ND and STD10NM60ND share identical electrical specifications, pinout, and DPAK package dimensions per DS7103 Rev 4. The "F" suffix denotes tape-and-reel packaging; both are functionally interchangeable with no layout or thermal redesign needed.

STF10NM60ND Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: FDmesh™ II

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 550mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 540 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF10NM60ND FAQ

1.How can I place an order for STF10NM60ND through Aetrix?

Please submit a Request for Quotation (RFQ) for STF10NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF10NM60ND reliable?

The price and inventory of STF10NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF10NM60ND is usually 5 days.

3.What payment methods are accepted for STF10NM60ND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF10NM60ND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF10NM60ND?

STF10NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF10NM60ND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF10NM60ND?

For technical support, including STF10NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF10NM60ND requirements.

6.How does Aetrix verify that STF10NM60ND is sourced from the original manufacturer or authorized distributors?

All STF10NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF10NM60ND meets industry standards.

7.What is the process for return or replacement of STF10NM60ND?

All STF10NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STF10NM60ND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF10NM60ND part is unused and in its original packaging.

Return procedure for STF10NM60ND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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