Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF10P6F6

Name: STF10P6F6
Brand: STMicroelectronics
SKU: STF10P6F6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STF10P6F6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF10P6F6.pdf

Description:: MOSFET P-CH 60V 10A TO220FP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,224

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STF10P6F6 from STMicroelectronics is a P-channel -60 V, 0.13 Ω typ., -10 A Power MOSFET in TO-220FP package, fabricated using STripFET™ F6 trench-gate technology. It serves as a high-efficiency high-side switch in DC-DC converters and motor control circuits, delivering low conduction loss (R_DS(on) = 0.13 Ω @ V_GS = -10 V), high avalanche ruggedness (E_AS = 80 mJ), and low gate charge (Q_g = 6.4 nC).

For engineers reviewing the STF10P6F6 datasheet, STF10P6F6 pinout, STF10P6F6 application, or STF10P6F6 equivalent, this page provides verified electrical specifications, thermal performance data, package mechanical details, real-world switching behavior (t_d(on) = 64 ns, t_f = 3.7 ns), and validated alternative options for industrial power switching designs.

Technical Context

This device operates as a normally-off P-channel enhancement-mode MOSFET with gate threshold voltage V_GS(th) = -2 to -4 V and absolute maximum drain-source voltage of -60 V. Its STripFET™ F6 process enables low R_DS(on) while maintaining robust safe operating area (SOA) up to 100 µs at T_C = 25 °C.

The TO-220FP package features an isolated tab (V_ISO = 2500 V RMS), thermal resistance R_thj-case = 5 °C/W, and junction temperature limit of 175 °C. Dynamic parameters include C_iss = 340 pF, C_oss = 40 pF, and Q_gd = 1.7 nC - enabling fast, low-loss switching in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum blocking voltage for high-side switch configurations in 48 V systems
R_DS(on) max	0.16 Ω @ V_GS = -10 V - Confirmed worst-case on-resistance ensuring ≤1.6 W conduction loss at -10 A
I_D continuous	-10 A @ T_C = 25 °C - Continuous current rating under heatsink-cooled conditions
E_AS	80 mJ - Single-pulse avalanche energy supporting unclamped inductive switching reliability
Q_g	6.4 nC - Total gate charge enabling efficient drive with standard logic-level gate drivers
t_f	3.7 ns - Fast fall time minimizing switching transition losses in high-frequency SMPS
R_thj-case	5 °C/W - Verified thermal resistance from junction to case, critical for heatsink sizing

Pinout & Package

STF10P6F6 uses the TO-220FP package with isolated tab (pin 1 = Gate, pin 2 = Drain, pin 3 = Source). The insulated mounting tab allows direct heatsink attachment without electrical isolation hardware.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Gate	Control terminal requiring ≤±20 V gate-source voltage; low Q_g reduces driver power demand
2 (Center)	Drain	Main power output node; connected to load or supply rail; rated for -60 V blocking
3 (Right)	Source	Reference node for gate drive; tied to system ground or floating return in high-side configuration
Tab (Back)	Drain (isolated)	Electrically isolated drain connection (2500 V RMS) for direct heatsink mounting without insulator

Key Features

Feature	Design Value
Very low R_DS(on)	0.13 Ω typ. @ V_GS = -10 V reduces conduction loss by >30% vs. prior-generation P-channel MOSFETs
Low gate charge	Q_g = 6.4 nC enables <1 µs turn-on with 10 mA gate driver, lowering drive circuit complexity
High avalanche ruggedness	E_AS = 80 mJ supports reliable operation during inductive load transients without external snubbers
Isolated TO-220FP package	2500 V RMS insulation withstand voltage eliminates need for mica washers or silicone pads in heatsink mounting
STripFET™ F6 trench gate	Optimized cell structure improves figure-of-merit (R_DS(on) × Q_g) by 25% over F5 technology

Applications

Industrial Motor Control

Telecom DC-DC Converters

Use Scenario: High-side switch in H-bridge motor drivers for 24–48 V brushed DC motors.

IC Role / Device Role / Timing Role: P-channel power switch controlling current flow to motor winding during forward phase.

Use Value: Low R_DS(on) minimizes I²R heating at 10 A peak, while avalanche rating handles back-EMF spikes up to 80 mJ.

Use Scenario: Synchronous rectifier or primary-side switch in isolated 48 V input telecom power supplies.

IC Role / Device Role / Timing Role: High-voltage P-channel switch in active clamp or flyback primary stage.

Use Value: 60 V rating accommodates 48 V nominal + 20% surge; fast t_f = 3.7 ns reduces switching loss at 300 kHz operation.

Automotive Body Control

LED Driver Circuits

Use Scenario: Load switch for interior lighting or HVAC actuators in 12 V/24 V vehicle subsystems.

IC Role / Device Role / Timing Role: High-side power distribution switch with reverse polarity protection.

Use Value: -60 V V_DS withstands load dump transients (ISO 7637-2 Pulse 5a); low Q_g ensures clean turn-off during EMI-sensitive operation.

Use Scenario: Constant-current LED string switch in architectural or signage lighting with dimming control.

IC Role / Device Role / Timing Role: PWM-controlled high-side current regulator for multi-LED arrays.

Use Value: Tight R_DS(on) tolerance (0.13–0.16 Ω) ensures consistent current sharing across parallel strings; SOA supports 100% duty cycle operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540NPbF	R_DS(on) = 0.2 Ω max @ V_GS = -10 V; Q_g = 80 nC; TO-220 (non-isolated tab)	Larger conduction loss (+55%) and slower switching due to higher Q_g; requires insulating hardware for heatsink mounting	Select when legacy footprint compatibility is required and lower switching frequency (<50 kHz) permits higher Q_g penalty
IXTP10P60P	R_DS(on) = 0.75 Ω max @ V_GS = -10 V; V_DS = -600 V; TO-220 (non-isolated)	Higher voltage rating but significantly higher on-resistance; unsuitable for low-loss 48 V applications	Choose only for high-voltage industrial AC-DC front-end stages where 600 V blocking is mandatory

Compared with IRF9540NPbF and IXTP10P60P, STF10P6F6 delivers superior efficiency in 48 V systems via its 0.13 Ω R_DS(on), 6.4 nC Q_g, and isolated TO-220FP package - reducing both conduction loss and thermal management complexity.

Availability

STF10P6F6 is available at Aetrix Electronics and suitable for industrial motor control, telecom DC-DC converters, and automotive body electronics requiring stable component supply and long-term manufacturability.

Supply support for STF10P6F6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STF10P6F6 belongs to the STripFET™ F6 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power switching in space-constrained industrial and telecom power systems.

FAQ

What is the maximum continuous drain current for STF10P6F6 at 100 °C case temperature?

The maximum continuous drain current I_D for STF10P6F6 is -7.2 A at T_C = 100 °C, as specified in Table 2 of the official datasheet (DocID022967 Rev 5). This derating reflects thermal limits of the TO-220FP package and must be used for heatsink design when ambient temperatures exceed 75 °C.

Does STF10P6F6 require a gate resistor for safe operation?

Yes - a gate resistor (typically 10–47 Ω) is recommended to dampen ringing and control dV/dt during switching. The device's low Q_g (6.4 nC) and fast t_f (3.7 ns) make it susceptible to oscillation without proper gate drive impedance, especially in high-di/dt motor control applications.

Can STF10P6F6 replace STD10P6F6 in a DPAK-based PCB layout?

No - STF10P6F6 uses TO-220FP packaging while STD10P6F6 uses DPAK (TO-252). Their footprints, thermal vias, and mounting methods are incompatible. Direct replacement would require PCB redesign, including new pad layout, heatsink interface, and clearance for the larger TO-220FP outline.

What is the source-drain diode forward voltage at -5 A?

The source-drain diode forward voltage V_SD is -1.1 V at I_SD = -5 A and V_GS = 0 V, per Table 7 in the datasheet. This value is measured with the device in its native P-channel configuration, where the intrinsic body diode conducts from source to drain under reverse bias.

STF10P6F6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VI

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 340 pF @ 48 V

FET Feature:: -

Power Dissipation (Max):: 20W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF10P6F6 FAQ

1.How can I place an order for STF10P6F6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF10P6F6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF10P6F6 reliable?

The price and inventory of STF10P6F6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF10P6F6 is usually 5 days.

3.What payment methods are accepted for STF10P6F6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF10P6F6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF10P6F6?

STF10P6F6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF10P6F6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF10P6F6?

For technical support, including STF10P6F6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF10P6F6 requirements.

6.How does Aetrix verify that STF10P6F6 is sourced from the original manufacturer or authorized distributors?

All STF10P6F6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF10P6F6 meets industry standards.

7.What is the process for return or replacement of STF10P6F6?

All STF10P6F6 units undergo pre-shipment inspection (PSI). If there is an issue with STF10P6F6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF10P6F6 part is unused and in its original packaging.

Return procedure for STF10P6F6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…