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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF110N10F7

Name: STF110N10F7
Brand: STMicroelectronics
SKU: STF110N10F7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF110N10F7

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF110N10F7.pdf

Description:: MOSFET N-CH 100V 45A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:5,655

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Product details

Overview

STF110N10F7 from STMicroelectronics is an N-channel 100 V, 5.1 mΩ typ. R_DS(on), 45 A continuous drain current Power MOSFET in TO-220FP package, utilizing STripFET™ VII and DeepGATE™ technology. It delivers ultra-low conduction loss for high-efficiency DC-DC converters and motor drive half-bridges operating at 25–100 °C case temperature.

For engineers reviewing the STF110N10F7 datasheet, STF110N10F7 pinout, STF110N10F7 application, or STF110N10F7 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, 100% avalanche-tested ruggedness, thermal resistance (R_thj-case = 5.00 °C/W), and TO-220FP's insulated tab for simplified heatsinking in isolated topologies.

Technical Context

This MOSFET employs ST's 7th-generation STripFET™ process with a redesigned gate structure to minimize R_DS(on) while maintaining robust safe operating area (SOA) up to 180 A pulsed drain current. Its 100% unclamped inductive switching (UIS) tested EAS of 490 mJ ensures reliability under transient overloads.

The device features low dynamic parameters: C_iss = 5117 pF, Q_g = 72 nC, and fast switching times (t_d(on) = 25 ns, t_f = 21 ns) optimized for hard-switched SMPS and synchronous rectification where gate drive loss and diode recovery are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 48 V bus systems with 2× safety margin against transients.
R_DS(on) typ.	5.1 mΩ @ V_GS = 10 V, I_D = 22.5 A - Enables ≤1.1 W conduction loss at 45 A, reducing heatsink requirements.
I_D cont. @ T_C = 25 °C	45 A - Continuous current rating under ideal heatsink conditions; derates to 32 A at 100 °C case.
EAS	490 mJ - Single-pulse avalanche energy supports robustness in inductive load switching without external snubbers.
R_thj-case	5.00 °C/W - Junction-to-case thermal resistance enables direct mounting to heatsinks with predictable thermal rise.
Q_g	72 nC - Total gate charge determines required gate driver peak current for <100 ns switching transitions.
t_f	21 ns - Fast fall time minimizes overlap loss in bridge configurations, improving efficiency above 100 kHz.

Pinout & Package

STF110N10F7 uses the TO-220FP (Full-Pak) package with insulated tab, enabling electrical isolation between drain and heatsink without additional insulators. The package has three leads: Gate (pin 1), Drain (pin 2), Source (pin 3), with pin 2 connected directly to the metal tab (drain).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; requires ≥±20 V absolute max gate-source voltage; low input capacitance enables efficient driving.
Pin 2	Drain	Main power terminal; electrically connected to insulated metal tab; must be isolated from heatsink unless referenced to same potential.
Pin 3	Source	Power return and reference node; ties to gate drive ground; carries full load current and source-drain diode conduction.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	5.1 mΩ typ. at 10 V drive - Reduces I²R losses by >30% vs. prior-gen 100 V MOSFETs in same package.
100% avalanche tested	490 mJ single-pulse EAS - Guarantees operation under unclamped inductive switching without parameter shift or failure.
STripFET™ VII + DeepGATE™	Optimized cell layout and gate trench geometry - Improves charge balance and reduces Crss/Ciss ratio for stable high-speed switching.
TO-220FP insulated tab	Electrically isolated drain tab - Eliminates need for mica washers or silicone pads in floating heatsink designs.

Applications

DC-DC Converters

Motor Drive Half-Bridges

Use Scenario: Primary-side switch in 48 V input, 12 V output synchronous buck converter operating at 200 kHz.

IC Role / Device Role / Timing Role: High-side power switch handling 45 A continuous current with minimal conduction and switching loss.

Use Value: 5.1 mΩ R_DS(on) limits conduction loss to 10.2 W at full load, enabling compact heatsink design and >95% peak efficiency.

Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge controlling 30 A stall current.

IC Role / Device Role / Timing Role: Synchronous rectifier and PWM-controlled current path with fast turn-off to prevent shoot-through.

Use Value: 21 ns fall time and 72 nC Q_g allow clean 50 kHz PWM edges, reducing cross-conduction risk and MOSFET heating during direction reversal.

Industrial Power Supplies

UPS Output Stages

Use Scenario: Output rectifier in 3 kW telecom rectifier with forced-air cooling and 100 °C ambient requirement.

IC Role / Device Role / Timing Role: Secondary-side synchronous FET replacing Schottky diodes to reduce forward drop and improve thermal margin.

Use Value: R_thj-case = 5.00 °C/W and 175 °C max junction temperature support sustained 32 A operation at 100 °C case, avoiding thermal runaway.

Use Scenario: Inverter leg switch in line-interactive UPS delivering 2 kVA sinusoidal output with battery backup.

IC Role / Device Role / Timing Role: Hard-switched power stage element subjected to repetitive inductive turn-off stress during transfer events.

Use Value: 490 mJ EAS rating withstands worst-case 100 µs inductive spikes without degradation, ensuring long-term field reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	Same die, TO-220 package (non-insulated tab); R_thj-case = 1.00 °C/W; I_D = 110 A cont.	Requires mechanical insulation for heatsink mounting; suited for higher-power, lower-thermal-resistance layouts.	Select when thermal budget allows direct drain-to-heatsink contact and higher continuous current is needed.
IRF540N	Legacy 100 V MOSFET; R_DS(on) = 44 mΩ typ.; no avalanche rating; C_iss = 1500 pF.	Limited to low-frequency (<50 kHz), low-current applications due to higher loss and slower switching.	Only consider for cost-sensitive, non-critical replacements where efficiency and ruggedness are secondary.

Compared with STP110N10F7, STF110N10F7 trades 3.5× higher thermal resistance for electrical isolation and reduced system-level insulation cost; versus IRF540N, it delivers 8.6× lower R_DS(on) and guaranteed avalanche capability-critical for modern high-density power stages.

Availability

STF110N10F7 is available at Aetrix Electronics and suitable for DC-DC converters, motor drive half-bridges, and industrial power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing for production programs.

Supply support for STF110N10F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in space-constrained industrial and telecom infrastructure equipment.

FAQ

What is the maximum gate-source voltage rating for STF110N10F7?

The absolute maximum V_GS is ±20 V, as specified in Table 2 of the datasheet. Exceeding this rating risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to ±18 V with transient suppression, especially in noisy industrial environments where ringing may cause overshoot.

Does STF110N10F7 have an integrated body diode, and what are its key parameters?

Yes, it includes a fast intrinsic body diode rated for 45 A continuous source-drain current (I_SD) and 180 A pulsed (I_SDM). At I_SD = 22.5 A and V_GS = 0 V, forward voltage is 1.2 V typ., with t_rr = 77 ns and Q_rr = 150 nC at T_j = 150 °C-enabling use in synchronous rectification without external diodes.

Can STF110N10F7 be used in parallel configurations?

Yes, its positive temperature coefficient of R_DS(on) (see Figure 13) ensures inherent current sharing across paralleled devices. However, layout symmetry-matched gate drive paths, Kelvin source connections, and identical thermal mounting-is essential to avoid imbalance; derating total current by 15% is recommended for reliability.

Is STF110N10F7 compliant with RoHS and REACH regulations?

Yes, STF110N10F7 is manufactured in ST's ECOPACK®-compliant TO-220FP package, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Full compliance documentation, including substance declarations and test reports, is available via ST's official quality portal.

STF110N10F7 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VII

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 22.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5117 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF110N10F7 FAQ

1.How can I place an order for STF110N10F7 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF110N10F7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF110N10F7 reliable?

The price and inventory of STF110N10F7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF110N10F7 is usually 5 days.

3.What payment methods are accepted for STF110N10F7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF110N10F7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF110N10F7?

STF110N10F7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF110N10F7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF110N10F7?

For technical support, including STF110N10F7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF110N10F7 requirements.

6.How does Aetrix verify that STF110N10F7 is sourced from the original manufacturer or authorized distributors?

All STF110N10F7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF110N10F7 meets industry standards.

7.What is the process for return or replacement of STF110N10F7?

All STF110N10F7 units undergo pre-shipment inspection (PSI). If there is an issue with STF110N10F7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF110N10F7 part is unused and in its original packaging.

Return procedure for STF110N10F7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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