STMicroelectronics STF11N50M2

Overview

STF11N50M2 from STMicroelectronics is an N-channel 500 V, 8 A Power MOSFET in TO-220FP package, fabricated with MDmesh™ M2 technology. It delivers 0.53 Ω max R_DS(on) at V_GS = 10 V, 12 nC total gate charge, and 100% avalanche-tested ruggedness-optimized for high-efficiency AC-DC flyback and PFC stages in industrial power supplies.

For engineers reviewing the STF11N50M2 datasheet, STF11N50M2 pinout, STF11N50M2 application, or STF11N50M2 equivalent, key selection criteria include its 50 V/ns dv/dt ruggedness, 2.5 kV isolation rating, Zener-protected gate, and low C_oss profile enabling hard-switched operation up to 100 kHz with reduced switching loss.

Technical Context

This device employs ST's MDmesh™ M2 strip layout and optimized vertical structure to simultaneously reduce conduction loss (R_DS(on)) and output capacitance (C_oss = 26 pF typ.), enabling higher efficiency in continuous conduction mode (CCM) PFC and resonant LLC topologies. Its 15 V/ns diode recovery dv/dt rating supports fast body diode commutation in bridgeless PFC designs.

The TO-220FP package integrates a thermally isolated tab (pin 2) with 5 °C/W junction-to-case thermal resistance, supporting 25 W continuous dissipation at T_C = 25 °C. The Zener-protected gate withstands ±25 V transient stress, eliminating external gate clamping in noisy industrial environments.

Key Specifications

Pinout & Package

TO-220FP package with isolated metal tab (pin 2), standard 3-pin vertical mounting configuration. Tab is electrically connected to drain (D) and serves as primary heat sink interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP11N50M2, STF11N50M2 trades 3.5 °C/W higher thermal resistance for reinforced insulation and simplified mounting; versus IPP60R099C7, it delivers 3.5× lower Q_g and 25% lower C_oss, making it more efficient in high-frequency, medium-power PFC and flyback applications.

Availability

STF11N50M2 is available at Aetrix Electronics and suitable for industrial AC-DC adapters, server power supplies, and EV onboard charger PFC stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STF11N50M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog/mixed-signal ICs for industrial, automotive, and consumer markets.

The STF11N50M2 belongs to ST's MDmesh™ M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power supplies operating at 65–300 kHz with stringent thermal and ruggedness requirements.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF11N50M2 supports 5 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10177 Rev 3. This derating reflects thermal limitations of the TO-220FP package's 5 °C/W junction-to-case resistance and ensures safe operation within the 150 °C maximum junction temperature limit under sustained load.

Does the TO-220FP package provide electrical isolation between the tab and leads?

Yes-the TO-220FP package features an electrically isolated metal tab (pin 2) rated for 2.5 kV RMS insulation withstand voltage between all three leads and the external heatsink (t = 1 s, T_C = 25 °C). This isolation eliminates the need for insulating pads in safety-critical applications such as medical or industrial power supplies complying with IEC 60950-1 or IEC 62368-1.

How does the Zener-protected gate improve system-level reliability?

The integrated gate Zener diode clamps transient gate-source voltage to ±25 V, preventing oxide breakdown during ESD events or gate driver overshoot. This eliminates reliance on external TVS diodes, reduces PCB area, and avoids failure modes caused by incorrect external component selection or layout-induced parasitic inductance in high-dI/dt gate loops.

Can STF11N50M2 replace STD11N50M2 in existing DPAK-based designs?

No-STF11N50M2 uses TO-220FP packaging with different pinout (G-D-S), thermal characteristics (5 °C/W vs. 1.47 °C/W), and mounting requirements, while STD11N50M2 uses DPAK (TO-252) with G-S-D pinout and surface-mount footprint. Direct replacement requires board redesign, heatsink adaptation, and revalidation of thermal and EMI performance.