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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF11N65K3

Name: STF11N65K3
Brand: STMicroelectronics
SKU: STF11N65K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF11N65K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF11N65K3.pdf

Description:: MOSFET N-CH 650V 11A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:9,139

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Product details

Overview

STF11N65K3 from STMicroelectronics is an N-channel 650 V, 11 A SuperMESH3™ Power MOSFET in TO-220FP package with R_DS(on) ≤ 0.85 Ω, 100% avalanche tested, and integrated gate-source Zener protection. It delivers high dv/dt capability (12 V/ns), low gate charge (42 nC), and improved diode reverse recovery (t_rr = 320 ns) for hard-switched SMPS primary-side switching.

For engineers reviewing the STF11N65K3 datasheet, STF11N65K3 pinout, STF11N65K3 application, or STF11N65K3 equivalent, key selection criteria include its 650 V V_DSS, 35 W P_TOT at T_C = 25 °C, R_thj-case = 3.57 °C/W, Zener-protected gate, and TO-220FP insulated package rated for 2500 V_RMS isolation.

Technical Context

This device uses ST's strip-based SuperMESH3™ layout to reduce R_DS(on) while maintaining robustness against voltage transients. Its internal back-to-back Zener diodes clamp gate-source voltage to ±30 V, eliminating need for external gate protection components.

The MOSFET exhibits optimized dynamic parameters: C_iss = 1180 pF, C_oss = 125 pF, Q_gd/Q_g ratio of ~55%, and fast switching (t_d(on) = 14.5 ns, t_f = 35 ns) under 4.7 Ω gate drive - enabling high-frequency operation in flyback and LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - supports universal-input offline SMPS up to 400 V DC bus with margin.
R_DS(on) max	0.85 Ω @ V_GS = 10 V, I_D = 3.6 A - enables low conduction loss in 11 A continuous applications.
I_D cont	11 A @ T_C = 25 °C - suitable for medium-power primary switches in 150–250 W adapters.
E_AS	212 mJ - withstands unclamped inductive switching stress without failure.
dv/dt	12 V/ns - resists false turn-on in noisy high-dV/dt environments like motor drives.
V_ESD(G-S)	2500 V HBM - ensures robust handling during PCB assembly and system integration.
V_ISO	2500 V_RMS - provides reinforced insulation between leads and heatsink in isolated topologies.

Pinout & Package

TO-220FP package features insulated mounting flange (no heatsink isolation washer required), 3-pin vertical lead frame, and creepage/clearance compliant with IEC 60950-1. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Control input with integrated ±30 V Zener clamping; requires <3 Ω gate resistor for stable switching.
Pin 2 (D)	Drain terminal	Main high-voltage power node; connected to transformer primary or DC bus; electrically tied to insulated flange.
Pin 3 (S)	Source terminal	Power return path and reference for gate drive; common connection point for current sensing and PWM controller feedback.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse EAS = 212 mJ performance across production lot - eliminates need for derating in inductive load circuits.
Extremely high dv/dt capability	12 V/ns rating prevents spurious turn-on during fast voltage transitions in bridge-leg or phase-shifted topologies.
Minimized gate charge	Q_g = 42 nC reduces driver power loss and enables >200 kHz operation with standard gate drivers.
Zener-protected gate	Integrated 30 V bidirectional Zener eliminates external TVS, simplifying layout and improving reliability in industrial environments.
Improved diode reverse recovery	t_rr = 320 ns and Q_rr = 2 µC reduce switching losses and EMI in discontinuous conduction mode (DCM) flyback designs.

Applications

AC-DC Adapters

Industrial SMPS

Use Scenario: 150–250 W universal-input offline flyback converter for medical and test equipment.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer to secondary winding.

Use Value: Low R_DS(on) and fast t_rr reduce total switching + conduction loss, enabling >88% efficiency at full load.

Use Scenario: 200 W half-bridge DC-DC converter in programmable logic controller (PLC) power supply.

IC Role / Device Role / Timing Role: High-side switch in isolated auxiliary rail generation with tight thermal constraints.

Use Value: TO-220FP insulation and R_thj-case = 3.57 °C/W allow direct heatsink mounting without additional isolation hardware.

LED Driver Power Stages

UPS Inverter Stages

Use Scenario: Constant-current buck-boost LED driver for street lighting operating from 277 V AC line.

IC Role / Device Role / Timing Role: Main switching element regulating output current via peak-current-mode control.

Use Value: Avalanche ruggedness ensures reliable operation during LED open-circuit fault events without external snubbers.

Use Scenario: 500 VA online UPS inverter stage converting 360 V DC bus to 230 V AC output.

IC Role / Device Role / Timing Role: Low-side switch in full-bridge output stage driving transformer primary.

Use Value: High dv/dt immunity prevents shoot-through during dead-time transitions in high-noise UPS environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12N65M2	R_DS(on) = 0.75 Ω (lower), but no integrated Zener; requires external gate protection.	Better conduction efficiency, but increased BOM count and layout complexity for gate protection.	Select when gate drive circuit already includes TVS and thermal budget allows tighter R_DS(on).
IPP65R099C7	650 V CoolMOS™ with R_DS(on) = 0.099 Ω, Q_g = 37 nC, but no built-in Zener or 2500 V isolation.	Superior switching efficiency above 100 kHz, but needs external isolation and gate clamping for same safety level.	Select for high-frequency resonant topologies where gate protection and isolation are implemented externally.

Compared with STP12N65M2 and IPP65R099C7, STF11N65K3 trades minor R_DS(on) penalty for integrated Zener protection and certified 2500 V_RMS isolation - reducing design risk and qualification effort in safety-critical industrial power supplies.

Availability

STF11N65K3 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, LED driver power stages, and UPS inverter stages requiring stable component supply and long-term lifecycle support.

Supply support for STF11N65K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The SuperMESH3™ Power MOSFET product line targets high-reliability, high-efficiency offline power conversion - emphasizing avalanche ruggedness, low EMI, and simplified gate-drive design for industrial-grade SMPS.

FAQ

What is the maximum safe operating temperature for STF11N65K3?

The STF11N65K3 has a maximum junction temperature (T_j) of 150 °C and a storage temperature range of –55 to 150 °C. Its R_thj-case is 3.57 °C/W, so with a case temperature of 100 °C, junction temperature remains within spec at 35 W dissipation. Derating begins at 25 °C ambient at 0.28 W/°C.

Does STF11N65K3 require external gate protection?

No. STF11N65K3 integrates bidirectional gate-source Zener diodes with 30 V breakdown voltage (BVGSO), providing inherent protection against ESD (2500 V HBM) and transient overvoltage. External gate TVS is not required unless system-level surge requirements exceed IEC 61000-4-5 Level 4.

Can STF11N65K3 be used in synchronous rectification?

No. STF11N65K3 is an N-channel high-voltage MOSFET optimized for primary-side switching, not low-side synchronous rectification. Its body diode recovery characteristics (t_rr = 320 ns) and R_DS(on) are not optimized for secondary-side conduction; dedicated SR controllers and low-V_DS MOSFETs (e.g., 100 V devices) are recommended instead.

Is STF11N65K3 RoHS and REACH compliant?

Yes. STF11N65K3 is manufactured in STMicroelectronics' ECOPACK®-compliant TO-220FP package, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Full compliance documentation, including substance declarations and test reports, is available via ST's official product page and material declaration portal.

STF11N65K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 850mOhm @ 3.6A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1180 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF11N65K3 FAQ

1.How can I place an order for STF11N65K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF11N65K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF11N65K3 reliable?

The price and inventory of STF11N65K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF11N65K3 is usually 5 days.

3.What payment methods are accepted for STF11N65K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF11N65K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF11N65K3?

STF11N65K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF11N65K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF11N65K3?

For technical support, including STF11N65K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF11N65K3 requirements.

6.How does Aetrix verify that STF11N65K3 is sourced from the original manufacturer or authorized distributors?

All STF11N65K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF11N65K3 meets industry standards.

7.What is the process for return or replacement of STF11N65K3?

All STF11N65K3 units undergo pre-shipment inspection (PSI). If there is an issue with STF11N65K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF11N65K3 part is unused and in its original packaging.

Return procedure for STF11N65K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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