STMicroelectronics STF11N65M5

Overview

STF11N65M5 from STMicroelectronics is an N-channel 650 V, 430 mΩ typ., 9 A MDmesh M5 Power MOSFET in TO-220FP package, optimized for high-efficiency switching power supplies and PFC stages. It delivers low conduction loss, fast switching with 17 nC total gate charge, and robust 100% avalanche-rated operation up to 2 A repetitive current.

For engineers reviewing the STF11N65M5 datasheet, STF11N65M5 pinout, STF11N65M5 application, or STF11N65M5 equivalent, key selection criteria include R_DS(on) at 10 V drive, diode recovery performance (t_rr = 232 ns), thermal resistance (R_thJC = 1.47 °C/W), and safe operating area under 400 V inductive loads.

Technical Context

This device employs ST's MDmesh M5 vertical superjunction process combined with PowerMESH horizontal layout, enabling ultra-low R_DS(on) while maintaining high voltage blocking (650 V) and low gate charge (17 nC). Its integrated body diode exhibits 232 ns reverse recovery time and 2 µC Q_rr at T_j = 25 °C.

The TO-220FP package provides isolated mounting via insulated tab (V_ISO = 2.5 kV RMS), with junction-to-case thermal resistance of 1.47 °C/W - critical for thermally constrained industrial SMPS designs operating at 100 °C case temperature.

Key Specifications

Pinout & Package

STF11N65M5 uses the TO-220FP (Type B) package with insulated tab, enabling direct mounting to grounded heat sinks without electrical isolation hardware. The plastic body isolates the metal tab from all leads, rated for 2.5 kV RMS insulation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 650 V power MOSFET applications.

Compared with STF11N65M5, STP11N65M5 offers identical electrical performance but demands additional isolation hardware, whereas IPD95R1K2P7 trades higher conduction loss for lower gate drive demand and enhanced noise immunity - making STF11N65M5 optimal for cost-sensitive, thermally constrained 100–200 kHz industrial SMPS.

Availability

STF11N65M5 is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, solar microinverters, and EV onboard chargers requiring stable component supply and long-term industrial lifecycle support.

Supply support for STF11N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

The MDmesh M5 product line targets high-efficiency AC-DC and DC-DC conversion systems, emphasizing low R_DS(on), fast switching, and rugged avalanche performance for mission-critical power infrastructure.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF11N65M5 supports 5.6 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS8920 Rev 4. This value is limited by junction temperature (T_J ≤ 150 °C) and reflects real-world derating in thermally constrained enclosures without forced airflow.

Does STF11N65M5 require a gate resistor for stability?

Yes - a 4.7 Ω gate resistor is used in the official switching time test circuit (Figure 20, DS8920), yielding t_d(v) = 23 ns and t_f(i) = 13.5 ns. Lower values increase switching speed but risk gate oscillation; higher values reduce EMI but raise switching losses proportionally to Q_g × f_sw.

Can STF11N65M5 replace STP11N65M5 in existing TO-220 footprints?

No - STF11N65M5 uses TO-220FP (insulated tab) with different lead spacing and mounting hole alignment versus TO-220 (non-isolated tab). Mechanical compatibility is not guaranteed; PCB redesign is required to accommodate the insulated tab's height and thermal pad clearance.

What is the typical reverse recovery charge of the integrated body diode?

The typical reverse recovery charge (Q_rr) is 2 µC at I_SD = 9 A, di/dt = 100 A/µs, and V_DD = 100 V (Table 7, DS8920 Rev 4). At 150 °C junction temperature, Q_rr increases to 2.8 µC, directly impacting turn-on loss in hard-switched topologies.