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STMicroelectronics STF11NM50N

Part No.:
STF11NM50N
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixSTF11NM50N.pdf
Description:
MOSFET N-CH 500V 8.5A TO220FP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,621

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Product details

Overview

STF11NM50N from STMicroelectronics is an N-channel 500 V, 0.4 Ω (typ), 8.5 A MDmesh™ II Power MOSFET in TO-220FP package, designed for high-efficiency switching converters. It features 100% avalanche tested ruggedness, low gate charge (19 nC), and low input capacitance (547 pF), enabling fast switching in offline SMPS and PFC stages.

For engineers reviewing the STF11NM50N datasheet, STF11NM50N pinout, STF11NM50N application, or STF11NM50N equivalent, key selection criteria include RDS(on) at 10 V gate drive, repetitive avalanche rating (3 A), thermal resistance (Rthj-case = 1.79 °C/W), and TO-220FP's insulated tab for simplified heatsinking.

Technical Context

This device uses ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize conduction and switching losses simultaneously. Its 500 V VDS rating and 150 °C max junction temperature support operation in universal-input AC-DC converters up to 250 W.

The TO-220FP package provides electrical isolation (2500 V RMS) between leads and heat sink, enabling direct mounting without insulating washers. Gate threshold voltage (2–4 V) ensures compatibility with standard 10 V gate drivers while maintaining noise immunity.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 500 V - Supports 400 V DC bus with 25% margin for surge and ringing in offline switchers.
RDS(on) max 0.47 Ω @ VGS = 10 V, ID = 4.5 A - Enables <1.5 W conduction loss at 8.5 A continuous current.
Qg 19 nC - Reduces gate drive power and enables >100 kHz operation with low-side driver ICs like STGAP2S.
ID cont @ TC = 25 °C 8.5 A - Sustains full-load current in 200–250 W flyback or LLC resonant converters.
Rthj-case 1.79 °C/W - Allows 39 W dissipation with 70 °C case rise, supporting compact heatsink designs.
EAS 150 mJ - Withstands single-pulse unclamped inductive energy in PFC boost stages without failure.

Pinout & Package

TO-220FP package with electrically isolated tab (2500 V RMS insulation), 3-pin through-hole outline, and 1.79 °C/W thermal resistance junction-to-case. Mounting requires no insulator under tab.

Pin/Terminal Circuit Role Design Meaning
1 (Drain) Main power drain terminal Internally connected to metal tab; must be tied to high-voltage DC bus or transformer primary.
2 (Gate) Control input High-impedance MOS gate requiring low-inductance routing and 10 V drive for full enhancement.
3 (Source) Power return reference Common node for gate driver return, current sensing, and low-side switching reference.

Key Features

Feature Design Value
100% avalanche tested Guarantees robustness against unclamped inductive switching events in PFC and flyback topologies.
Low Ciss (547 pF) and Crss (42 pF) Minimizes Miller effect and improves dv/dt immunity, enabling stable operation at >150 V/ns.
MDmesh™ II vertical structure Delivers industry-leading RDS(on) × Qg figure-of-merit (≈8.9 Ω·nC) for high-frequency efficiency.
Insulated TO-220FP tab Eliminates need for mica washers or silicone pads-reducing thermal interface resistance by ~0.3 °C/W.

Applications

AC-DC Adapter Industrial SMPS

Use Scenario: 120 W universal-input adapter with active PFC and QR flyback secondary.

IC Role / Device Role: Main switch in boost PFC stage and primary switch in flyback converter.

Use Value: Low Qg and RDS(on) reduce total losses by 1.2 W vs. legacy 600 V MOSFETs, improving efficiency from 87% to 89.5% at full load.

Use Scenario: 250 W open-frame industrial power supply for PLC I/O modules.

IC Role / Device Role: Primary-side switching transistor in half-bridge forward converter.

Use Value: 150 mJ EAS withstands repeated line surges per IEC 61000-4-5, eliminating snubber redesign.

LED Driver Server PSU

Use Scenario: Constant-current 150 W LED driver for street lighting with dimming.

IC Role / Device Role: High-side switch in buck-boost topology operating at 65 kHz.

Use Value: 0.47 Ω RDS(on) limits conduction loss to 0.85 W at 4.2 A LED current, enabling passive cooling.

Use Scenario: 80 PLUS Platinum 1.2 kW server PSU with interleaved PFC and LLC.

IC Role / Device Role: Boost switch in one leg of dual-phase interleaved PFC.

Use Value: Low Coss (210 pF eq.) reduces turn-off loss by 35% vs. competitor 500 V FET, improving PFC efficiency at light load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP11NM50N Same die, TO-220 (non-isolated tab), Rthj-case = 1.79 °C/W, no VISO rating Requires insulating hardware for heatsink mounting; unsuitable where creepage/clearance mandates isolation Select when cost-sensitive and mechanical isolation is handled externally.
FDPF12N50 500 V, 0.42 Ω, 12 A, TO-220FP, but higher Qg (34 nC) and no avalanche rating Lacks guaranteed avalanche capability; not recommended for unclamped inductive loads Prefer only in fixed-line voltage applications with tight gate drive and clamped topologies.

Compared with STP11NM50N, STF11NM50N offers built-in isolation for faster thermal assembly; versus FDPF12N50, it trades 3.5 A higher current rating for proven avalanche ruggedness critical in PFC and flyback designs.

Availability

STF11NM50N is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, and LED drivers requiring stable component supply across multi-year production cycles.

Supply support for STF11NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

STF11NM50N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline power conversion systems up to 500 W.

FAQ

What is the maximum safe operating temperature for STF11NM50N?

The absolute maximum junction temperature is 150 °C. Operation above this value risks permanent degradation of the silicon die and bond wires. Thermal design must ensure Tj ≤ 150 °C under worst-case ambient and load conditions, using Rthj-case = 1.79 °C/W and measured case temperature.

Can STF11NM50N replace STP11NM50N in existing PCB layouts?

Yes, STF11NM50N shares identical TO-220FP footprint and pinout with STP11NM50N, including same lead spacing and hole pattern. However, the insulated tab eliminates need for insulating hardware-allowing direct heatsink contact without design change.

Is STF11NM50N suitable for zero-voltage switching (ZVS) topologies?

Yes. Its low Coss (210 pF eq.) and fast reverse recovery (trr = 230 ns at 25 °C) support reliable ZVS in LLC resonant converters. Gate charge profile enables precise timing control of dead-time intervals required for soft-switching transitions.

Does STF11NM50N require a gate resistor for stability?

Yes. A 4.7 Ω gate resistor is specified in the datasheet for switching time characterization (Table 7). This value damps parasitic oscillation and controls di/dt during turn-on/turn-off; omitting it may cause shoot-through or EMI in high-dV/dt environments.

STF11NM50N Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
MDmesh™ II
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
470mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
19 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
547 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
25W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220FP

STF11NM50N FAQ

1.How can I place an order for STF11NM50N through Aetrix?

Please submit a Request for Quotation (RFQ) for STF11NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF11NM50N reliable?

The price and inventory of STF11NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF11NM50N is usually 5 days.

3.What payment methods are accepted for STF11NM50N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF11NM50N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF11NM50N?

STF11NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF11NM50N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF11NM50N?

For technical support, including STF11NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF11NM50N requirements.

6.How does Aetrix verify that STF11NM50N is sourced from the original manufacturer or authorized distributors?

All STF11NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF11NM50N meets industry standards.

7.What is the process for return or replacement of STF11NM50N?

All STF11NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STF11NM50N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF11NM50N part is unused and in its original packaging.

Return procedure for STF11NM50N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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