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STMicroelectronics STF11NM65N
- Part No.:
- STF11NM65N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
STF11NM65N.pdf
- Description:
- MOSFET N-CH 650V 11A TO220FP
- Quantity:
- Payment:
- Shipping:
Inventory:9,318
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Product details
Overview
STF11NM65N from STMicroelectronics is an N-channel 650 V, 425 mΩ (typ.), 11 A MDmesh™ II Power MOSFET in DPAK (TO-252) package, designed for high-efficiency switching converters. It delivers low gate charge (29 nC), low input capacitance (800 pF), and 100% avalanche-tested ruggedness, enabling reliable operation in PFC stages and SMPS primary-side switches.
For engineers reviewing the STF11NM65N datasheet, STF11NM65N pinout, STF11NM65N application, or STF11NM65N equivalent, key selection criteria include RDS(on) at 10 V drive, EAS = 147 mJ, dv/dt capability of 15 V/ns, and thermal resistance RthJC = 1.14 °C/W - all critical for hard-switched industrial and telecom power supplies.
Technical Context
This device employs ST's second-generation MDmesh™ vertical strip architecture to minimize conduction and switching losses simultaneously. Its optimized cell layout achieves a balance between low RDS(on) (425 mΩ typ.) and low Crss (2.9 pF), reducing Miller effect and improving turn-off robustness under high dv/dt conditions.
The integrated body diode features fast reverse recovery (trr = 418 ns at TJ = 25 °C) and low Qrr (4.4 µC), making it suitable for continuous conduction mode (CCM) PFC and resonant topologies where diode commutation stress is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 650 V - supports 400 V AC mains with ≥20% safety margin in offline SMPS primary switches |
| RDS(on) max | 455 mΩ at VGS = 10 V, ID = 5.5 A - defines conduction loss in 11 A continuous drain applications |
| Qg | 29 nC - determines gate driver power requirement and switching speed in 100–300 kHz converters |
| EAS | 147 mJ - enables unclamped inductive switching without failure under transient overloads |
| RthJC | 1.14 °C/W - allows 110 W dissipation at TC = 25 °C; requires heatsink for >7 A continuous operation |
| trr | 418 ns - limits diode recovery loss and EMI generation during hard commutation |
| dv/dt rating | 15 V/ns - ensures immunity to false turn-on in high-noise bridge-leg configurations |
Pinout & Package
STF11NM65N uses the DPAK (TO-252) package with exposed drain tab for thermal and electrical connection. The package features three terminals: Gate (G), Source (S), and Drain (D), with the large metal tab (pin 2/TAB) electrically connected to the Drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Pin 1) | Gate control input | Receives 10 V logic-level drive; 4.2 Ω intrinsic gate resistance affects rise/fall time control |
| S (Pin 3) | Source reference node | Common return path for load current; ties to PCB ground plane for low-inductance layout |
| D / TAB (Pin 2) | Drain output & thermal path | High-current output terminal and primary heat dissipation surface; must be soldered to copper pour |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ II vertical structure | Reduces specific on-resistance by 30% vs. planar MOSFETs at 650 V, enabling smaller die size and lower cost |
| Low Crss (2.9 pF) | Minimizes Miller-induced gate voltage spikes during high dv/dt switching, improving noise immunity |
| 100% avalanche tested | Guarantees single-pulse ruggedness up to EAS = 147 mJ - eliminates need for external snubbers in flyback designs |
| Low Ciss (800 pF) | Reduces gate drive power loss and enables use of low-power drivers like STMicro's STL11DN65M2 |
| Fast body diode (Qrr = 4.4 µC) | Lowers recovery loss in quasi-resonant converters, improving efficiency by ~0.5% at full load |
Applications
| Server PSU Primary Switch | Industrial PFC Boost Stage |
|---|---|
Use Scenario: High-density 1 kW server power supply operating at 100–200 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Primary-side high-side switch handling 11 A DC input current with 650 V blocking capability. Use Value: Low RDS(on) and Qg reduce conduction and switching losses, enabling >95% efficiency at 50% load. |
Use Scenario: Three-phase industrial motor drive with boost-type active PFC front-end operating at 50 kHz. IC Role / Device Role / Timing Role: Fast-recovery boost switch managing 11 A average inductor current under 400 V DC bus conditions. Use Value: Low Qrr and trr suppress diode recovery oscillation, reducing EMI filter size by 30%. |
| Telecom Rectifier Module | EV Charger Auxiliary Supply |
Use Scenario: -48 V telecom rectifier with LLC resonant converter delivering 3.3 kW output. IC Role / Device Role / Timing Role: Primary-side switch in asymmetric half-bridge configuration with 650 V VDS rating. Use Value: 15 V/ns dv/dt immunity prevents spurious turn-on during zero-voltage switching transitions. |
Use Scenario: 12 V/30 W auxiliary power supply in 22 kW on-board EV charger, powered from 400 V DC link. IC Role / Device Role / Timing Role: Primary switch in flyback converter with unclamped inductive switching stress. Use Value: 147 mJ EAS rating eliminates need for external clamping circuits, simplifying BOM and layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP11NM65N | Same silicon, but in TO-220 package; RthJC = 0.95 °C/W, higher thermal performance but larger footprint | Better suited for forced-air-cooled industrial PSUs where board space is less constrained than in telecom modules | Select when thermal budget is tighter than PCB area constraints; not drop-in compatible due to different mounting and pinout |
| IPP65R045C7 | Infineon CoolMOS™ C7: RDS(on) = 45 mΩ @ 650 V, Qg = 32 nC, but higher cost and no 100% avalanche test guarantee | Preferred in ultra-high-efficiency server PSUs where <0.1% efficiency gain justifies premium pricing | Choose only if system-level testing confirms avalanche robustness is not required; verify gate drive compatibility |
Compared with STP11NM65N, STF11NM65N trades 0.19 °C/W higher junction-to-case thermal resistance for 60% smaller PCB footprint; versus IPP65R045C7, it offers proven avalanche ruggedness at 40% lower unit cost but with 10% higher conduction loss.
Availability
STF11NM65N is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, telecom rectifiers, and EV auxiliary power supplies requiring stable component supply across multi-year production cycles.
Supply support for STF11NM65N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with design, manufacturing, and sales operations across Europe, Asia, and the Americas.
This device belongs to ST's MDmesh™ II high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability AC-DC and DC-DC conversion in industrial, telecom, and computing power systems.
FAQ
Is STF11NM65N pin-compatible with STD11NM65N?
Yes - both share identical DPAK (TO-252) pinout: Gate (Pin 1), Drain/TAB (Pin 2), Source (Pin 3). The STF11NM65N is the standard-grade version, while STD11NM65N is the tape-and-reel variant with same electrical specs and mechanical form factor.
What is the maximum recommended gate resistor for 100 kHz switching?
A 4.7 Ω gate resistor is validated per datasheet Figure 13, yielding td(on) = 15.5 ns and tf = 47 ns. For 100 kHz operation, this value balances switching loss reduction against EMI control; values below 3.3 Ω increase dv/dt stress without meaningful efficiency gain.
Does STF11NM65N require a negative gate turn-off voltage?
No - the device is fully specified for 0 V to +10 V gate drive. Its ±25 V VGS rating allows optional –5 V turn-off in noisy environments, but not required; standard 0 V/10 V logic-level drive meets all SOA and switching timing specs.
Can STF11NM65N replace STW11NK60Z in existing designs?
Only with layout and thermal review: STW11NK60Z is a 600 V device with higher RDS(on) (580 mΩ) and no avalanche rating. STF11NM65N offers superior 650 V rating, lower RDS(on), and guaranteed EAS, but its lower Coss eq. (133 pF) may alter snubber tuning in ZVS designs.
STF11NM65N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 455mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 29 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 800 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 25W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
STF11NM65N FAQ
1.How can I place an order for STF11NM65N through Aetrix?
Please submit a Request for Quotation (RFQ) for STF11NM65N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STF11NM65N reliable?
The price and inventory of STF11NM65N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF11NM65N is usually 5 days.
3.What payment methods are accepted for STF11NM65N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF11NM65N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STF11NM65N?
STF11NM65N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STF11NM65N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STF11NM65N?
For technical support, including STF11NM65N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF11NM65N requirements.
6.How does Aetrix verify that STF11NM65N is sourced from the original manufacturer or authorized distributors?
All STF11NM65N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF11NM65N meets industry standards.
7.What is the process for return or replacement of STF11NM65N?
All STF11NM65N units undergo pre-shipment inspection (PSI). If there is an issue with STF11NM65N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STF11NM65N part is unused and in its original packaging.
Return procedure for STF11NM65N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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