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STMicroelectronics STF11NM80
- Part No.:
- STF11NM80
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
STF11NM80.pdf
- Description:
- MOSFET N-CH 800V 11A TO220FP
- Quantity:
- Payment:
- Shipping:
Inventory:954
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Product details
Overview
STF11NM80 from STMicroelectronics is an N-channel 800 V, 380 mΩ typ., 11 A MDmesh™ Power MOSFET in TO-220FP package, engineered for high-voltage switching in offline SMPS, PFC stages, and industrial motor drives. It delivers 44 A pulsed drain current, 30 V/ns dv/dt capability, and 400 mJ single-pulse avalanche energy - enabling robust operation under inductive load transients and unclamped inductive switching.
For engineers reviewing the STF11NM80 datasheet, STF11NM80 pinout, STF11NM80 application, or STF11NM80 equivalent, this device is selected for high-reliability 800 V primary-side switching where low gate charge (50 nC), low input capacitance (1630 pF), and 100% avalanche-tested ruggedness are critical design requirements.
Technical Context
This MOSFET employs ST's MDmesh™ technology - a multi-drain process combined with PowerMESH™ horizontal layout - to achieve ultra-low RDS(on) while maintaining high voltage blocking. Its strip-based cell structure enhances dynamic performance and thermal stability across wide temperature ranges.
The device features a fast intrinsic body diode with 612 ns reverse recovery time (TJ = 25 °C) and 7.22 µC Qrr, optimized for hard-switched topologies. Gate threshold voltage is tightly specified at 3–5 V (VGS(th)), ensuring reliable turn-on with standard 10 V gate drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 800 V - supports full mains rectified voltage in universal-input 85–265 VAC systems without derating. |
| RDS(on) max | 400 mΩ - limits conduction loss to ≤4.84 W at 11 A DC, enabling compact heatsink design. |
| Qg | 50 nC - reduces gate drive power requirement and enables efficient operation at 100 kHz+ switching frequencies. |
| EAS | 400 mJ - withstands unclamped inductive switching events without failure, eliminating need for external snubbers in many designs. |
| dv/dt | 30 V/ns - prevents spurious turn-on during high-slew-rate voltage transients in bridge configurations. |
| TJ max | 150 °C - allows sustained operation in enclosed industrial enclosures with ambient up to 85 °C. |
| Ciss | 1630 pF - balances switching speed and EMI control; lower than comparable 800 V MOSFETs in same RDS(on) class. |
Pinout & Package
STF11NM80 uses the TO-220FP (Full-Pak) package - a variant of TO-220 with insulated tab, enabling direct mounting to heatsinks without insulating washers. The plastic body isolates the drain (tab) from the mounting surface, rated for 2.5 kV RMS insulation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Left lead) | Gate (G) | Low-impedance control input; requires <2.7 Ω gate resistance to damp ringing and limit peak current during switching. |
| 2 (Tab) | Drain (D) | High-voltage power terminal; electrically isolated from heatsink via molded plastic, simplifying thermal/mechanical design. |
| 3 (Right lead) | Source (S) | Power return path and gate reference; connects directly to PCB ground plane for stable switching node control. |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ technology | Enables 380 mΩ RDS(on) at 800 V rating - 30% lower on-resistance than conventional planar MOSFETs in same package. |
| 100% avalanche tested | Guarantees single-pulse EAS ≥400 mJ - eliminates screening failures in production and ensures field reliability under fault conditions. |
| Low Qgd/Qg ratio | 21 nC / 50 nC = 0.42 - improves hard-switching efficiency and reduces Miller-induced shoot-through risk in half-bridge layouts. |
| Fast body diode | trr = 612 ns, Qrr = 7.22 µC - minimizes commutation loss and voltage overshoot during freewheeling in flyback and LLC resonant converters. |
| TO-220FP insulation | 2.5 kV RMS isolation between tab and leads - permits direct heatsink mounting without mica pads or silicone grease barriers. |
Applications
| Industrial AC-DC Power Supplies | Server & Telecom Rectifiers |
|---|---|
|
Use Scenario: Primary-side switch in 500–1000 W active clamp forward or asymmetrical half-bridge converters operating from 3-phase 400 VAC input. IC Role / Device Role / Timing Role: High-voltage power switch handling 800 V DC bus, switching at 70–120 kHz with synchronous rectification control. Use Value: Low RDS(on) and high dv/dt immunity reduce conduction and switching losses by 18% versus legacy 800 V MOSFETs, improving system efficiency to >94%. |
Use Scenario: Boost PFC stage in 3 kW telecom rectifier modules requiring continuous 11 A output at 400 VDC bus. IC Role / Device Role / Timing Role: Critical switching element in continuous conduction mode (CCM) boost converter, driven by dedicated PFC controller IC. Use Value: 44 A pulsed current rating and 150 W power dissipation (TC = 25 °C) support high peak-load capability without thermal throttling. |
| Motor Drive Inverters | Induction Heating Systems |
|
Use Scenario: Upper-leg IGBT replacement in 7.5 kW HVAC inverter drives operating at 400 VDC bus with 16 kHz PWM carrier. IC Role / Device Role / Timing Role: High-side power switch in three-phase inverter leg, subject to high dV/dt and shoot-through stress during dead-time transitions. Use Value: 30 V/ns dv/dt rating and low Qgd suppress false triggering, reducing gate driver complexity and improving short-circuit robustness. |
Use Scenario: Half-bridge switch in 10–20 kW resonant induction heating inverters using series-loaded topology at 20–50 kHz. IC Role / Device Role / Timing Role: Fast-switching power device managing high di/dt currents (>100 A/µs) and reverse recovery stress during zero-voltage switching transitions. Use Value: Optimized body diode trr and Qrr minimize switching node voltage spikes and EMI generation, easing EMI filter design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP11NM80 | Same die, TO-220 (non-insulated tab); RthJC = 0.83 °C/W vs. 3.6 °C/W for STF11NM80. | Requires insulating pad/heatsink isolation; higher thermal performance but added assembly cost and reliability risk. | Select when maximum thermal efficiency is prioritized and mechanical isolation can be assured via design controls. |
| IPP60R190C6 | 650 V rating, 190 mΩ RDS(on), CoolMOS™ C6; lower VDS but insufficient for 800 V bus designs. | Not suitable for universal-input offline SMPS above 450 VDC; limited to 650 V systems like 380 VDC industrial buses. | Choose only if system DC bus is confirmed ≤650 V and lower conduction loss justifies voltage margin reduction. |
Compared with STP11NM80, STF11NM80 trades thermal resistance for safety-certified insulation - critical in medical and industrial equipment requiring reinforced isolation. Versus IPP60R190C6, it provides essential 800 V headroom for surge-tolerant designs but with higher RDS(on) and gate charge.
Availability
STF11NM80 is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifiers, and induction heating systems requiring stable component supply and long-term manufacturing continuity.
Supply support for STF11NM80 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.
STF11NM80 belongs to the MDmesh™ II family - a line of high-voltage superjunction MOSFETs specifically developed for energy-efficient, high-reliability offline power conversion in industrial and telecom infrastructure.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STF11NM80 supports 8 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS3013 Rev 12. This rating reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be validated against actual PCB layout and heatsink performance.
Does STF11NM80 require a negative gate voltage for reliable turn-off?
No - STF11NM80 has a gate threshold voltage range of 3–5 V and is fully enhanced with 0 V gate-source bias. A negative gate voltage is not required for turn-off; however, applying –5 V to –10 V improves noise immunity in high-dv/dt environments and reduces Miller-induced turn-on risk in bridge configurations.
Can STF11NM80 replace STP11NM80 in an existing TO-220 footprint?
No - STF11NM80 uses the TO-220FP package with a different lead frame geometry and insulated tab, requiring PCB footprint revision. While both share identical pinout (G-D-S), the TO-220FP has longer leads and altered mounting hole spacing; mechanical compatibility must be verified using ST's AM01475v1_noZen drawing.
Is the body diode suitable for synchronous rectification in LLC resonant converters?
No - the intrinsic body diode has trr = 612 ns and Qrr = 7.22 µC, which is too slow for efficient synchronous rectification above 200 kHz. For LLC SR, discrete Schottky or GaN FETs with sub-100 ns recovery are recommended; STF11NM80 is intended for primary-side switching only.
STF11NM80 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 800 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 400mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 43.6 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1630 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
STF11NM80 FAQ
1.How can I place an order for STF11NM80 through Aetrix?
Please submit a Request for Quotation (RFQ) for STF11NM80 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STF11NM80 reliable?
The price and inventory of STF11NM80 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF11NM80 is usually 5 days.
3.What payment methods are accepted for STF11NM80?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF11NM80 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STF11NM80?
STF11NM80 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STF11NM80 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STF11NM80?
For technical support, including STF11NM80 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF11NM80 requirements.
6.How does Aetrix verify that STF11NM80 is sourced from the original manufacturer or authorized distributors?
All STF11NM80 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF11NM80 meets industry standards.
7.What is the process for return or replacement of STF11NM80?
All STF11NM80 units undergo pre-shipment inspection (PSI). If there is an issue with STF11NM80, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STF11NM80 part is unused and in its original packaging.
Return procedure for STF11NM80:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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