STMicroelectronics STF120NF10

Overview

STF120NF10 from STMicroelectronics is an N-channel 100 V, 9.0 mΩ typ. R_DS(on), 110 A continuous drain current Power MOSFET fabricated using STripFET™ II technology. It delivers low gate charge (172 nC typ.), high dv/dt immunity (10 V/ns), and 100% avalanche tested ruggedness for primary-side switching in isolated DC-DC converters used in telecom and server power supplies.

For engineers reviewing the STF120NF10 datasheet, STF120NF10 pinout, STF120NF10 application, or STF120NF10 equivalent, key selection criteria include its 100 V V_DS, 9.0 mΩ R_DS(on) at V_GS = 10 V, 172 nC total gate charge, TO-220 package thermal resistance (R_thj-case = 0.48 °C/W), and 550 mJ single-pulse avalanche energy - all critical for high-efficiency, high-reliability hard-switched SMPS designs.

Technical Context

This MOSFET operates as a high-current, high-voltage unidirectional switch with integrated body diode optimized for fast recovery (t_rr = 152 ns, Q_rr = 760 nC) under inductive turn-off conditions. Its STripFET™ II process minimizes C_iss (5200 pF) and Crss (325 pF), enabling stable operation in high-frequency ZVS/ZCS topologies up to 500 kHz.

The device supports gate drive with standard 10 V logic-level signals and withstands repetitive unclamped inductive switching stress per JEDEC JESD24-11. Safe operating area (SOA) is defined up to 100 °C case temperature with 77 A continuous ID, supporting derated operation in convection-cooled industrial enclosures.

Key Specifications

Pinout & Package

STF120NF10 is supplied in TO-220 package (standard variant, not FP). The package features isolated tab (drain-connected), three leads: Gate (G), Drain (D), Source (S). Thermal performance relies on mechanical mounting of the tab to heatsink via insulating washer or thermal pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V Power MOSFET applications.

Compared with IXTH110N10L2 and IRFP4668PBF, STF120NF10 uniquely balances low R_DS(on), moderate Q_g, TO-220 mountability, and guaranteed avalanche ruggedness - making it optimal for space-constrained, reliability-critical telecom and server SMPS where thermal and transient margins are non-negotiable.

Availability

STF120NF10 is available at Aetrix Electronics and suitable for telecom AC-DC front-ends, server power supply primary switches, and industrial motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STF120NF10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STF120NF10 belongs to the STripFET™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power supplies in telecom infrastructure and datacenter equipment.

FAQ

Is STF120NF10 pin-compatible with STP120NF10?

Yes - STF120NF10 and STP120NF10 share identical TO-220 package outline, pin assignment (G-D-S), and mechanical dimensions per ST's DocID9522 Rev 8. Both devices use the same die and differ only in screening grade and test flow; electrical parameters and thermal characteristics are identical.

What is the maximum recommended gate resistor for reliable switching?

A 4.7 Ω gate resistor is validated in ST's datasheet test circuit (Figure 13) for 60 A resistive loads, yielding td(on) = 25 ns and tf = 68 ns. For 110 A operation, reduce to 2.2–3.3 Ω to maintain <100 ns fall time while limiting peak gate current to <4.5 A.

Does STF120NF10 require a negative gate voltage for safe turn-off?

No - STF120NF10 has a gate threshold voltage (V_GS(th)) of 2–4 V and is fully enhanced at 10 V. Turn-off is reliably achieved with 0 V gate bias; applying –5 V is unnecessary and not specified in the absolute maximum ratings (V_GS = ±20 V).

Can STF120NF10 replace STW120NF10 in TO-247-based designs?

No - STF120NF10 uses TO-220 packaging (R_thj-case = 0.48 °C/W), while STW120NF10 uses TO-247 (R_thj-case = 0.40 °C/W) and has higher thermal mass. Direct substitution would exceed junction temperature limits above 250 W dissipation due to 17% higher thermal resistance.