STMicroelectronics STF12N50DM2

Overview

STF12N50DM2 from STMicroelectronics is a high-voltage N-channel MDmesh DM2 Power MOSFET in TO-220FP package, rated for 500 V V_DS, 299 mΩ typ. R_DS(on), and 11 A continuous drain current at T_C = 25 °C. It integrates a fast-recovery body diode with 140 ns trr and 707 nC Q_rr, enabling high-efficiency ZVS phase-shift and bridge-topology converters.

For engineers reviewing the STF12N50DM2 datasheet, STF12N50DM2 pinout, STF12N50DM2 application, or STF12N50DM2 equivalent, key selection criteria include its 40 V/ns diode dv/dt ruggedness, 50 V/ns MOSFET dv/dt capability, 16 nC total gate charge, 100% avalanche tested reliability, and insulation withstand voltage of 2.5 kV RMS.

Technical Context

This MOSFET employs ST's MDmesh DM2 silicon technology optimized for high-voltage switching with minimized recovery losses. Its low C_iss (628 pF) and ultra-low C_rss (1.2 pF) reduce Miller effect and improve switching controllability under hard-switching conditions.

The integrated Zener-protected gate and 100% unclamped inductive avalanche testing (E_AS = 320 mJ) ensure robustness in overvoltage transients. The TO-220FP package provides insulated mounting via 2.5 kV RMS isolation between leads and heat sink, supporting safe high-side or half-bridge configurations.

Key Specifications

Pinout & Package

Supplied in TO-220FP (Type B) package with insulated tab: plastic body, vertical lead frame, and internal creepage/clearance designed for 2.5 kV RMS isolation between all three leads and external heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET switching applications.

Compared with STF12N50M2 and IPP60R190C7, STF12N50DM2 uniquely balances 500 V rating, fast-recovery diode, 2.5 kV isolation, and moderate gate charge-making it optimal for space-constrained, high-reliability bridge and ZVS designs where integrated safety and recovery performance are mandatory.

Availability

STF12N50DM2 is available at Aetrix Electronics and suitable for server power supplies, industrial UPS inverters, ZVS phase-shift converters, and EV onboard charger PFC stages requiring stable component supply and long-term lifecycle assurance.

Supply support for STF12N50DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to the MDmesh DM2 Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies demanding low recovery loss, high voltage capability, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF12N50DM2 supports 8 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10537 Rev 3. This derating reflects thermal limitations of the TO-220FP package with R_thJC = 5 °C/W; proper heatsinking is required to sustain this current without exceeding 150 °C junction temperature.

Does the body diode support bidirectional current flow in synchronous rectification?

Yes-the integrated body diode is rated for 11 A continuous source-drain current (I_SD) and 44 A pulsed (I_SDM). Its 140 ns reverse recovery time and 707 nC Q_rr are characterized per Figure 15 test circuit, making it suitable for controlled synchronous rectification in LLC and phase-shift converters where diode conduction occurs during dead-time intervals.

Can STF12N50DM2 be mounted directly to a common heatsink with other devices?

Yes-the TO-220FP package provides 2.5 kV RMS insulation between all three leads and the external heatsink surface. This allows direct mechanical mounting without insulating pads or sleeves, simplifying thermal design in multi-MOSFET half-bridge or full-bridge layouts while maintaining galvanic isolation.

Is gate threshold voltage stable across temperature?

Yes-Figure 9 shows normalized V_GS(th) remains within ±10% from –75 °C to 150 °C at I_D = 250 µA. The typical value is 4 V at 25 °C, with min/max bounds of 3 V and 5 V, ensuring predictable turn-on behavior across industrial temperature ranges without requiring adaptive gate drive compensation.