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STMicroelectronics STF12N65M5

Name: STF12N65M5
Brand: STMicroelectronics
SKU: STF12N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF12N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-5 Full Pack

Datasheet:: STF12N65M5.pdf

Description:: MOSFET N-CH 650V 8.5A TO220FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STF12N65M5 from STMicroelectronics is an N-channel 650 V, 430 mΩ (max) MDmesh M5 Power MOSFET in TO-220FP package, rated for 8.5 A continuous drain current at 25 °C and 25 W total power dissipation. It features 20 nC total gate charge, 900 pF input capacitance, and 150 mJ single-pulse avalanche energy-designed for high-efficiency AC-DC PFC stages and industrial SMPS.

For engineers reviewing the STF12N65M5 datasheet, STF12N65M5 pinout, STF12N65M5 application, or STF12N65M5 equivalent, key selection criteria include R_DS(on) stability over temperature, unclamped inductive switching robustness, diode reverse recovery performance (t_rr = 230 ns), and thermal resistance (R_thJC = 5.00 °C/W) in insulated mounting configurations.

Technical Context

This device implements ST's MDmesh M5 vertical superjunction process with PowerMESH horizontal layout, delivering low specific on-resistance (R_DS(on) × area) while maintaining 650 V breakdown voltage. Its gate threshold voltage (3–5 V) enables standard 10 V gate drive compatibility without requiring level-shifting circuitry.

The integrated body diode exhibits 1.5 V forward voltage at 8.5 A and 2.2 µC reverse recovery charge under 100 A/µs di/dt, supporting hard-switched flyback and resonant LLC topologies where diode conduction and recovery losses dominate efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands full mains rectified voltage in universal-input 85–265 VAC systems without derating.
R_DS(on) max	430 mΩ at V_GS = 10 V, I_D = 4.3 A - Limits conduction loss to ≤3.7 W at 8.5 A, enabling compact heatsink design.
I_D cont @ T_C = 25 °C	8.5 A - Supports ≥1 kW output in 200 kHz PFC boost stages with <10 °C junction rise above case.
Q_g	20 nC - Enables fast turn-on with ≤1 Ω gate resistor while keeping EMI below CISPR-22 Class B limits.
E_AS	150 mJ - Sustains single-pulse inductive energy without failure during startup or overload transients.
t_rr	230 ns at T_J = 25 °C - Reduces diode switching loss and dv/dt-induced shoot-through risk in half-bridge configurations.
R_thJC	5.00 °C/W - Allows direct mounting to aluminum heatsink with thermal interface material for stable T_J < 125 °C at full load.

Pinout & Package

TO-220FP package with insulated tab (no electrical connection to drain), 3-pin vertical lead frame, 2.5 kV RMS insulation rating between leads and heat sink. Mounting hole diameter: 3.0–3.2 mm.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain	Electrically isolated metal tab serves as primary heat path; connected to high-side DC bus in boost/PFC circuits.
G (Pin 1)	Gate	High-impedance control terminal; requires 10 V drive for full enhancement; sensitive to ESD (±25 V absolute max).
S (Pin 3)	Source	Reference node for gate drive and current sensing; tied to low-side switch node or ground return path.

Key Features

Feature	Design Value
MDmesh M5 superjunction structure	Enables 650 V rating with 390 mΩ typ. R_DS(on), reducing conduction loss by 22% vs. prior-generation 600 V MOSFETs.
100% avalanche tested	Guarantees ruggedness against unclamped inductive energy up to 150 mJ per pulse-critical for PFC choke saturation events.
Low Q_gd/Q_gs ratio (8.3/4.8 nC)	Minimizes Miller plateau duration, improving immunity to false turn-on during high dv/dt commutation (≥15 V/ns).
Optimized body diode t_rr and Q_rr	230 ns / 2.2 µC enables ZVS-assisted operation in quasi-resonant converters without external snubbers.

Applications

Industrial AC-DC Power Supplies

Server & Telecom Rectifiers

Use Scenario: Active PFC boost stage in 1–2 kW telecom rectifier operating at 100–200 kHz.

IC Role / Device Role / Timing Role: High-side switching element controlling inductor current to shape input current waveform.

Use Value: 430 mΩ R_DS(on) and 20 nC Q_g enable >96% PFC efficiency at full load while meeting EN 61000-3-2 harmonic limits.

Use Scenario: Primary-side switch in 80+ Titanium-certified server PSU with dual-phase interleaved PFC.

IC Role / Device Role / Timing Role: Fast-switching power transistor synchronized to 150 kHz PWM controller with phase-shifted gate drive.

Use Value: 230 ns diode t_rr and low Q_rr reduce cross-conduction loss by 1.8 W per phase versus legacy 600 V MOSFETs.

Motor Drive Inverters

Renewable Energy Converters

Use Scenario: Low-side switch in 3-phase IGBT/MOSFET inverter for HVAC compressor drives (0.75–2.2 kW).

IC Role / Device Role / Timing Role: Ground-referenced switching node handling 8.5 A RMS motor current with 34 A pulsed capability.

Use Value: 5.00 °C/W R_thJC allows direct heatsink mounting without isolation pads, simplifying thermal management in space-constrained enclosures.

Use Scenario: DC-DC boost stage in string-level solar microinverters (250–350 VDC input, 400 VDC output).

IC Role / Device Role / Timing Role: High-voltage switch regulating PV panel current into intermediate DC bus under partial shading conditions.

Use Value: 650 V V_DS and 150 mJ E_AS ensure reliable operation during lightning-induced surge transients on rooftop arrays.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 650 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12N65M5	Same die, TO-220 (non-insulated tab); R_thJC = 1.79 °C/W but requires insulating washer for heatsink mounting.	Better thermal performance in non-isolated chassis designs; unsuitable where creepage/clearance mandates insulated mounting.	Select when mechanical mounting permits direct tab-to-heatsink contact and safety standards allow non-isolated construction.
IPP65R045C7	Infineon CoolMOS C7; 45 mΩ typ. R_DS(on) at 650 V, but higher Q_g (34 nC) and no guaranteed avalanche rating.	Lower conduction loss at light loads; higher switching loss and untested avalanche margin limit use in PFC with variable line conditions.	Prefer for high-frequency, low-duty-cycle applications where gate drive strength exceeds 2 A peak; avoid in critical PFC or motor drive.

Compared with STP12N65M5, STF12N65M5 trades 3.21 °C/W higher junction-to-case thermal resistance for 2.5 kV insulation-enabling safer, simpler mounting in medical and industrial AC-DC supplies. Versus IPP65R045C7, it offers proven avalanche ruggedness and lower Q_gd, making it more robust in hard-switched PFC despite higher R_DS(on).

Availability

STF12N65M5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom rectifiers, and renewable energy converters requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for STF12N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

This device belongs to the MDmesh M5 Power MOSFET product line, engineered specifically for high-voltage, high-efficiency switching in PFC, SMPS, and motor control-emphasizing avalanche ruggedness, low gate charge, and thermally optimized packaging.

FAQ

What is the maximum safe operating temperature for STF12N65M5?

The STF12N65M5 has a specified operating junction temperature range of −55 °C to 150 °C. For reliable long-term operation, ST recommends limiting T_J to ≤125 °C under continuous conduction mode. At T_C = 25 °C, its 25 W power dissipation limit corresponds to ~125 °C junction temperature using R_thJC = 5.00 °C/W.

Does STF12N65M5 require a gate driver with negative turn-off capability?

No. The device's gate threshold voltage (3–5 V) and low Q_gd/Q_gs ratio make it compatible with standard 0–10 V or 0–12 V gate drivers. A 10 Ω series resistor and local 100 nF decoupling capacitor are sufficient to suppress ringing and prevent false turn-on during high dv/dt transitions.

Can STF12N65M5 replace STF10N65M5 in existing designs?

Yes-with verification. STF12N65M5 offers identical 650 V rating and improved R_DS(on) (430 mΩ vs. 520 mΩ for STF10N65M5), lower Q_g (20 nC vs. 24 nC), and same TO-220FP package. Layout changes are unnecessary, but thermal margin improves by ~1.2 W at 8.5 A due to reduced conduction loss.

Is the body diode suitable for synchronous rectification?

No. The integrated body diode has 1.5 V forward voltage and 230 ns reverse recovery time-optimized for freewheeling in hard-switched topologies, not low-loss synchronous rectification. For SR applications, discrete Schottky or GaN FETs with <0.5 V V_F and sub-50 ns t_rr are required.

STF12N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-220-5 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 8.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 430mOhm @ 4.3A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 900 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF12N65M5 FAQ

1.How can I place an order for STF12N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF12N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF12N65M5 reliable?

The price and inventory of STF12N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF12N65M5 is usually 5 days.

3.What payment methods are accepted for STF12N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF12N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF12N65M5?

STF12N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF12N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF12N65M5?

For technical support, including STF12N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF12N65M5 requirements.

6.How does Aetrix verify that STF12N65M5 is sourced from the original manufacturer or authorized distributors?

All STF12N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF12N65M5 meets industry standards.

7.What is the process for return or replacement of STF12N65M5?

All STF12N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STF12N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF12N65M5 part is unused and in its original packaging.

Return procedure for STF12N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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