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STMicroelectronics STF12NK80Z
- Part No.:
- STF12NK80Z
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
STF12NK80Z.pdf
- Description:
- MOSFET N-CH 800V 10.5A TO220FP
- Quantity:
- Payment:
- Shipping:
Inventory:9,485
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Product details
Overview
STF12NK80Z from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET rated for 800 V drain-source voltage, 585 mΩ typical RDS(on), and 10.5 A continuous drain current at TC = 25 °C in TO-220FP package. It delivers high dv/dt immunity (4.5 V/ns), 100% avalanche-tested ruggedness, and low gate charge (87 nC) for hard-switching in offline SMPS and industrial motor drives.
For engineers reviewing the STF12NK80Z datasheet, STF12NK80Z pinout, STF12NK80Z application, or STF12NK80Z equivalent, this device is selected for high-reliability 800 V switching where ESD robustness (4 kV HBM), low output capacitance (250 pF Coss), and fast turn-off (70 ns td(off)) are critical in flyback, PFC, and half-bridge topologies.
Technical Context
This MOSFET employs ST's SuperMESH process - an evolution of PowerMESH - to simultaneously reduce on-resistance and enhance dynamic ruggedness. Its Zener-protected gate structure enables stable operation under transient overvoltage conditions without external clamping.
The device features minimized intrinsic capacitances (Ciss = 2620 pF, Crss = 53 pF) and optimized charge distribution (Qgd/Qgs = 3.1), supporting clean switching waveforms and reduced EMI in high-frequency converters up to 100 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 800 V - Withstands full mains rectified voltage in universal-input offline converters without derating. |
| RDS(on) typ. | 585 mΩ - Enables <1.5 W conduction loss at 10.5 A, reducing heatsink requirements in 100–300 W power supplies. |
| Qg | 87 nC - Low total gate charge allows efficient driving with standard 1-A gate drivers at 65–100 kHz. |
| EAS | 400 mJ - Single-pulse avalanche energy rating supports unclamped inductive switching in relay drivers and solenoid controls. |
| dv/dt | 4.5 V/ns - High inherent noise immunity prevents spurious turn-on during fast voltage transients in motor drive half-bridges. |
| TJ max | 150 °C - Rated junction temperature enables operation in sealed enclosures or high-ambient industrial environments. |
| Coss | 250 pF - Low output capacitance minimizes switching losses during zero-voltage transition (ZVT) soft-switching designs. |
Pinout & Package
STF12NK80Z is housed in TO-220FP (Full-Pak) package - a variant of TO-220 with insulated flange and shorter leads for improved creepage/clearance in high-voltage applications. The plastic body provides reinforced insulation (VISO = 2.5 kV RMS) between all three leads and external heat sink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain, Pin 2 + Tab) | Main high-side current path | Tab-connected drain enables direct mounting to heatsink while maintaining 2.5 kV isolation - critical for Class I safety compliance. |
| G (Gate, Pin 1) | Control terminal | Zener-protected gate withstands ±30 V transients; 3.0–4.5 V threshold ensures TTL/CMOS compatibility with 5 V logic-level drivers. |
| S (Source, Pin 3) | Reference node for gate drive | Source pin is electrically isolated from tab; requires Kelvin connection for accurate gate-source voltage control in high-di/dt layouts. |
Key Features
| Feature | Design Value |
|---|---|
| SuperMESH process technology | Reduces RDS(on) by 25% vs. prior PowerMESH while improving dv/dt immunity and SOA margin. |
| 100% avalanche tested | Every unit validated for single-pulse EAS ≥ 400 mJ - eliminates need for external snubbers in inductive load switching. |
| Zener-protected gate | Integrated gate-body Zener clamps VGS to ±20 V, preventing oxide damage during layout-induced ringing or ESD events. |
| Low Crss/Ciss ratio | 53 pF / 2620 pF = 0.02 - minimizes Miller effect, enabling stable operation with minimal gate resistance (RG = 4.7 Ω). |
| Enhanced ESD capability | 4 kV HBM rating - exceeds IEC 61000-4-2 Level 3, reducing field failure risk in automated assembly and handling. |
Applications
| Industrial Motor Drives | Offline Switch-Mode Power Supplies |
|---|---|
|
Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC compressors. IC Role / Device Role / Timing Role: High-side switching element in 20–50 kHz PWM-driven bridge, handling 10.5 A peak phase current. Use Value: 4.5 V/ns dv/dt rating prevents false triggering during cross-conduction transitions; 400 mJ EAS absorbs inductive kickback without external protection. |
Use Scenario: Primary-side switch in 200 W universal-input flyback converter for LED street lighting. IC Role / Device Role / Timing Role: Main power switch operating at 65 kHz with 800 V blocking requirement across bulk capacitor. Use Value: 585 mΩ RDS(on) limits conduction loss to <1.2 W; Zener-protected gate tolerates 300 V overshoot during transformer reset. |
| Power Factor Correction (PFC) | AC-DC Front-End Rectification |
|
Use Scenario: Boost switch in continuous conduction mode (CCM) PFC stage for telecom rectifiers. IC Role / Device Role / Timing Role: Fast-switching MOSFET handling 10.5 A average current with 42 A pulsed capability during line peaks. Use Value: Low Qgd (44 nC) reduces switching loss during high-duty-cycle operation; 250 pF Coss enables efficient zero-current switching (ZCS) design. |
Use Scenario: High-voltage DC-DC converter input stage in railway signaling power modules. IC Role / Device Role / Timing Role: Input switch isolating 800 V DC bus during fault conditions or maintenance disconnect. Use Value: 2.5 kV VISO rating satisfies EN 50121-3-2 clearance requirements; TO-220FP insulated flange eliminates need for additional insulating hardware. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP12NK80Z | Same die, TO-220 (non-isolated flange); RthJC = 0.66 °C/W vs. 3.1 °C/W for STF12NK80Z. | Requires external insulator for 2.5 kV isolation; better thermal performance but higher layout complexity. | Select when heatsink mounting permits direct metal contact and creepage distance >8 mm is achievable. |
| FQP12N80 | 800 V, 750 mΩ max RDS(on), no Zener gate protection; Qg = 95 nC; not 100% avalanche tested. | Lacks integrated gate protection and avalanche validation - mandates external TVS and snubber design. | Choose only for cost-sensitive, non-safety-critical applications with controlled layout and low di/dt. |
Compared with STP12NK80Z, STF12NK80Z trades thermal resistance for built-in isolation and safety compliance; versus FQP12N80, it adds gate robustness and guaranteed avalanche ruggedness at modest cost premium - essential for industrial reliability.
Availability
STF12NK80Z is available at Aetrix Electronics and suitable for industrial motor drives, offline switch-mode power supplies, power factor correction circuits, and AC-DC front-end rectification requiring stable component supply and long-term manufacturability.
Supply support for STF12NK80Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive ICs with vertical manufacturing capabilities.
STF12NK80Z belongs to the SuperMESH Power MOSFET product line - engineered specifically for high-efficiency, high-reliability 600–1000 V switching in industrial and consumer power conversion systems.
FAQ
What is the maximum safe operating temperature for STF12NK80Z?
The absolute maximum junction temperature is 150 °C. Derated continuous drain current drops from 10.5 A at TC = 25 °C to 6.6 A at TC = 100 °C per Table 1. Thermal design must maintain TJ ≤ 150 °C using RthJC = 3.1 °C/W and appropriate heatsinking - verified via transient thermal impedance curves in Figure 4.
Does STF12NK80Z require a gate resistor, and what value is recommended?
Yes - a gate resistor is required to control dV/dt and prevent oscillation. For 65 kHz operation with 1-A driver, 4.7 Ω is validated in datasheet Figure 17 and Figure 22. Lower values (≤2.2 Ω) increase EMI risk; higher values (>10 Ω) degrade switching speed and increase losses.
Can STF12NK80Z replace STP12NK80Z in existing designs?
Electrically identical in die characteristics, but mechanical differences exist: STF12NK80Z uses TO-220FP (insulated flange), while STP12NK80Z uses standard TO-220. Direct replacement requires verifying creepage/clearance, heatsink isolation, and thermal interface - RthJC is 3.1 °C/W vs. 0.66 °C/W, so thermal performance will be lower unless heatsink area is increased.
Is STF12NK80Z suitable for synchronous rectification?
No - it is a standard N-channel enhancement-mode MOSFET with body diode recovery time (trr = 635 ns) and Qrr = 5.9 µC, unsuitable for high-frequency synchronous rectification. Its design targets primary-side switching in hard-switched topologies, not secondary-side low-VF conduction.
STF12NK80Z Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- SuperMESH™
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 800 V
- Current - Continuous Drain (Id) @ 25°C:
- 10.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 750mOhm @ 5.25A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 87 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2620 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 40W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
STF12NK80Z FAQ
1.How can I place an order for STF12NK80Z through Aetrix?
Please submit a Request for Quotation (RFQ) for STF12NK80Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STF12NK80Z reliable?
The price and inventory of STF12NK80Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF12NK80Z is usually 5 days.
3.What payment methods are accepted for STF12NK80Z?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF12NK80Z transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STF12NK80Z?
STF12NK80Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STF12NK80Z order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STF12NK80Z?
For technical support, including STF12NK80Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF12NK80Z requirements.
6.How does Aetrix verify that STF12NK80Z is sourced from the original manufacturer or authorized distributors?
All STF12NK80Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF12NK80Z meets industry standards.
7.What is the process for return or replacement of STF12NK80Z?
All STF12NK80Z units undergo pre-shipment inspection (PSI). If there is an issue with STF12NK80Z, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STF12NK80Z part is unused and in its original packaging.
Return procedure for STF12NK80Z:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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