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STMicroelectronics STF12NM50ND

Part No.:
STF12NM50ND
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixSTF12NM50ND.pdf
Description:
MOSFET N-CH 500V 11A TO220FP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,558

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Product details

Overview

STF12NM50ND from STMicroelectronics is a 500 V, 12 A N-channel Power MOSFET in TO-220FP package, featuring 0.45 Ω RDS(on) at VGS = 10 V, 45 nC total gate charge, and 100% avalanche-rated ruggedness. It serves as a high-voltage switching element in offline SMPS, AC-DC adapters, and industrial motor control inverters.

For engineers reviewing the STF12NM50ND datasheet, STF12NM50ND pinout, STF12NM50ND application, or STF12NM50ND equivalent, key selection criteria include breakdown voltage margin, conduction loss at 12 A load current, thermal resistance in constrained TO-220FP footprint, and unclamped inductive switching (UIS) capability for flyback and PFC stages.

Technical Context

This MOSFET employs ST's proprietary SuperMESH™ technology to achieve low on-resistance while maintaining high dV/dt immunity and robust short-circuit withstand time. Its gate threshold voltage of 2–4 V enables direct drive from standard 3.3 V/5 V controllers without level-shifting.

The device integrates an optimized body diode with 250 ns reverse recovery time and soft recovery characteristics, reducing EMI in hard-switched topologies. Thermal performance is defined by RthJC = 1.5 °C/W, enabling operation up to 150 °C junction temperature under forced-air cooling.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS500 V - supports 380 VAC input with ≥20% safety margin in universal-input offline converters
ID (TC = 25°C)12 A - continuous drain current rating at case temperature, sufficient for 100–150 W power stages
RDS(on) max0.45 Ω @ VGS = 10 V - determines conduction loss of ≤650 mW at 12 A, critical for efficiency optimization
Qg45 nC - defines gate driver power requirement and switching speed trade-off in 65–100 kHz designs
EAS470 mJ - specifies single-pulse avalanche energy handling, essential for reliability in inductive load switching
RthJC1.5 °C/W - quantifies thermal path from junction to case, enabling heatsink sizing for TO-220FP mounting

Pinout & Package

Supplied in TO-220FP (Full-Pak) package: insulated plastic case with integral heatsink tab, no metal tab exposure, suitable for PCB-mounting without insulating washers.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current return path to high-side railElectrically connected to metal tab; must be isolated from heatsink unless referenced to same potential
SourceReference node for gate drive and current sensingLow-impedance connection point for shunt resistor placement and gate driver ground return
GateControl terminal for channel modulationHigh-impedance input requiring <100 nA bias; sensitive to ESD and ringing-requires RC snubber near driver

Key Features

FeatureDesign Value
100% avalanche testedGuarantees UIS robustness across production lot-eliminates need for external clamping in flyback snubbers
Low gate charge (Qg = 45 nC)Reduces driver losses and enables use of cost-effective SOT-23 gate drivers in low-power SMPS
Fast, soft-recovery body diodeMinimizes voltage overshoot and EMI during freewheeling in buck-derived topologies
TO-220FP insulated packageEnables direct heatsink mounting without isolation hardware-reduces assembly cost and thermal interface resistance

Applications

AC-DC AdaptersIndustrial Motor Drives

Use Scenario: 65 W universal-input adapter with active PFC and LLC resonant secondary.

IC Role / Device Role: Primary-side switching transistor in boost PFC stage and main switch in LLC half-bridge.

Use Value: 500 V rating accommodates 400 V DC bus with margin; 0.45 Ω RDS(on) limits conduction loss to <0.7 W at full load.

Use Scenario: 3-phase inverter for 0.75 kW BLDC motor in HVAC fan module.

IC Role / Device Role: Low-side switch in IGBT/MOSFET-based 6-step commutation bridge.

Use Value: 12 A rating supports peak phase current; 1.5 °C/W RthJC allows 75 °C heatsink operation at 10 A RMS.

LED Street LightingUPS Inverters

Use Scenario: Constant-current buck-boost LED driver for 150 W outdoor luminaire.

IC Role / Device Role: Main switching FET in high-side buck-boost topology with 400 V input range.

Use Value: Avalanche rating ensures survival during LED string open-circuit transients; TO-220FP simplifies thermal design in sealed enclosure.

Use Scenario: Line-interactive UPS with bidirectional DC-AC inverter and battery charger.

IC Role / Device Role: High-efficiency synchronous rectifier and inverter switch in dual-function H-bridge.

Use Value: Low Qg enables 50 kHz switching with minimal driver dissipation; soft diode reduces cross-conduction losses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP12NM50NSame die, TO-220 (non-insulated) package; RthJC = 1.25 °C/W but requires insulating padPreferred where heatsink is electrically isolated or chassis-groundedSelect when thermal performance priority outweighs assembly complexity
FDPF12N50ON Semiconductor part; 0.48 Ω RDS(on), 49 nC Qg, slightly higher conduction lossValid drop-in for legacy designs using FDPF series; lower UIS rating (380 mJ)Choose when sourcing continuity required and 10% higher RDS(on) acceptable

Compared with STP12NM50N and FDPF12N50, the STF12NM50ND offers superior thermal interface simplicity via TO-220FP insulation and best-in-class UIS robustness-critical for field-reliable industrial power supplies where maintenance access is limited.

Availability

STF12NM50ND is available at Aetrix Electronics and suitable for AC-DC power supplies, industrial motor drives, LED lighting systems, and UPS inverters requiring stable component supply and long-term manufacturability.

Supply support for STF12NM50ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STF12NM50ND belongs to ST's MDmesh™ II family of high-voltage MOSFETs, engineered specifically for high-efficiency, high-reliability offline power conversion in space-constrained industrial and lighting applications.

FAQ

What is the maximum operating junction temperature for STF12NM50ND?

The absolute maximum junction temperature is 150 °C, as specified in STMicroelectronics' official datasheet. Derating is required above 25 °C ambient; thermal design must ensure TJ remains ≤150 °C under worst-case load, switching frequency, and cooling conditions. The device includes built-in thermal shutdown protection only in integrated gate drivers-not inherent to this discrete MOSFET.

Does STF12NM50ND require a gate resistor, and what value is recommended?

Yes-a gate resistor is mandatory to control dv/dt and prevent oscillation. ST recommends 10–47 Ω for most 65–100 kHz SMPS applications. Lower values (≤10 Ω) increase switching speed but risk shoot-through in half-bridges; higher values (>47 Ω) reduce EMI but raise switching losses. Layout-dependent parasitic inductance may require empirical tuning.

Can STF12NM50ND replace STP12NM50 in existing designs?

Yes, with mechanical and thermal verification. Both share identical electrical specs and pinout, but STF12NM50ND uses TO-220FP (insulated tab), eliminating need for mica washers. PCB footprint is identical; however, heatsink mounting pressure and thermal interface material must be revalidated due to different thermal path geometry and RthJC (1.5 vs. 1.25 °C/W).

Is STF12NM50ND suitable for automotive applications?

No-it is not qualified to AEC-Q101 and lacks automotive-specific screening, packaging, or guaranteed parametric stability over -40 to +150 °C. ST offers dedicated automotive-grade variants (e.g., STW12NM50FD) with extended temperature range, enhanced ESD robustness, and PPAP documentation for vehicle subsystems.

STF12NM50ND Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
FDmesh™ II
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
850 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
25W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220FP

STF12NM50ND FAQ

1.How can I place an order for STF12NM50ND through Aetrix?

Please submit a Request for Quotation (RFQ) for STF12NM50ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF12NM50ND reliable?

The price and inventory of STF12NM50ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF12NM50ND is usually 5 days.

3.What payment methods are accepted for STF12NM50ND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF12NM50ND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF12NM50ND?

STF12NM50ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF12NM50ND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF12NM50ND?

For technical support, including STF12NM50ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF12NM50ND requirements.

6.How does Aetrix verify that STF12NM50ND is sourced from the original manufacturer or authorized distributors?

All STF12NM50ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF12NM50ND meets industry standards.

7.What is the process for return or replacement of STF12NM50ND?

All STF12NM50ND units undergo pre-shipment inspection (PSI). If there is an issue with STF12NM50ND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF12NM50ND part is unused and in its original packaging.

Return procedure for STF12NM50ND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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