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STMicroelectronics STF12NM60N

Part No.:
STF12NM60N
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixSTF12NM60N.pdf
Description:
MOSFET N-CH 600V 10A TO220FP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,785

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Product details

Overview

STF12NM60N from STMicroelectronics is a second-generation MDmesh™ N-channel 600 V power MOSFET in TO-220FP package, with RDS(on) ≤ 0.41 Ω at VGS = 10 V, 10 A continuous drain current at TC = 25 °C, and 100% avalanche tested. It serves as a high-voltage switching element in offline SMPS, PFC stages, and industrial motor drives requiring high efficiency and ruggedness.

For engineers reviewing the STF12NM60N datasheet, STF12NM60N pinout, STF12NM60N application, or STF12NM60N equivalent, this device is selected for its low gate charge (30.5 nC), low input capacitance (960 pF), and optimized dv/dt immunity (41 V/ns) in hard-switched 600 V topologies.

Technical Context

The STF12NM60N implements ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize conduction and switching losses simultaneously. Its 600 V VDSS, 0.35 Ω typical RDS(on), and 30.5 nC total gate charge enable high-frequency operation in flyback, LLC, and boost converters.

It features an integrated source-drain diode with 10 A continuous forward current, 1.3 V forward voltage at 10 A, and 360 ns reverse recovery time at 25 °C - supporting synchronous rectification and inductive load switching with controlled recovery behavior.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS600 V - supports 400 V AC mains-derived DC bus with 50% safety margin for surge and ringing
RDS(on) max0.41 Ω @ VGS = 10 V - limits conduction loss to ≤ 41 W at 10 A, enabling compact thermal design
Qg30.5 nC - reduces gate drive power requirement and enables use with standard 1 A peak drivers
ID cont10 A @ TC = 25 °C - defines maximum steady-state current under heatsink-cooled conditions
EAS200 mJ - withstands unclamped inductive energy without failure, critical for relay/snubberless designs
dv/dt immunity41 V/ns - suppresses false turn-on during fast voltage transients in high-side configurations
Rthj-case5.0 °C/W - allows direct mounting to heatsink for ≤ 75 °C junction rise at 18 W dissipation

Pinout & Package

STF12NM60N uses the TO-220FP (Full-Pak) package: insulated plastic case with integral heatsink tab, 3-pin single-ended configuration, lead-free ECOPACK® compliant, and rated for 300 °C soldering.

Pin/TerminalCircuit RoleDesign Meaning
1 (Source)Power return path for drain currentLow-inductance connection point for PCB ground plane; ties directly to source of driver IC
2 (Gate)Control terminal for channel modulationHigh-impedance input requiring <5 Ω series resistance to damp oscillation and limit dV/dt-induced current
3 (Drain)Main high-voltage power output nodeConnected to primary winding or DC bus; electrically isolated from heatsink via TO-220FP insulation

Key Features

FeatureDesign Value
100% Unclamped Avalanche TestedGuarantees robustness against inductive energy spikes without external snubbers in relay or transformer primary switching
Low Qg/Ciss Ratio30.5 nC / 960 pF = 31.8 V - improves switching speed vs. drive strength trade-off in 100–500 kHz converters
Optimized Body Diode Recoverytrr = 360 ns @ 25 °C - minimizes commutation loss and EMI in quasi-resonant and ZVS topologies
ECOPACK® Lead-Free ConstructionComplies with RoHS and JEDEC JESD97; eliminates Pb-based solder compatibility concerns in modern assembly lines
Thermal Resistance (Rthj-case)5.0 °C/W - enables >15 W continuous dissipation on modest 50 cm² aluminum heatsink at 40 °C ambient

Applications

Server PSU Primary SwitchIndustrial AC-DC Adapter

Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100–300 kHz with active clamp flyback topology.

IC Role / Device Role / Timing Role: Main high-side switch controlling energy transfer from 400 V DC bus to transformer primary.

Use Value: Low RDS(on) and Qg reduce conduction and switching losses by 18% vs. first-gen 600 V MOSFETs, improving full-load efficiency to ≥96.2%.

Use Scenario: 200 W industrial AC-DC adapter for PLC I/O modules, operating in harsh ambient (−25 to +70 °C).

IC Role / Device Role / Timing Role: Boost PFC switch handling 10 A peak inductor current at 65 kHz.

Use Value: 200 mJ EAS rating ensures reliable operation during line surges and cold-start inrush, eliminating need for external clamping.

Solar Microinverter DC-Link SwitchEV Onboard Charger Auxiliary SMPS

Use Scenario: 300–450 V DC-link switching stage in string-level solar microinverter with bidirectional capability.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in interleaved half-bridge configuration.

Use Value: 41 V/ns dv/dt immunity prevents spurious turn-on during fast bus transients caused by SiC inverter switching noise.

Use Scenario: Auxiliary 12 V/3 A SMPS inside 6.6 kW EV onboard charger, powered from 400 V battery rail.

IC Role / Device Role / Timing Role: Primary-side switch in flyback converter supplying control logic and gate drivers.

Use Value: TO-220FP insulation eliminates need for isolating thermal pad, simplifying mechanical layout and reducing BOM cost by $0.18/unit.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP12NM60NSame die, TO-220 (non-insulated) package; Rthj-case = 1.38 °C/W but requires insulating padPreferred where heatsink isolation is handled externally and lower thermal resistance is criticalSelect when board space permits insulator use and junction temperature must stay <125 °C at >20 W dissipation
FDPF12N60NZ600 V, 0.39 Ω, 12 A, 42 nC Qg; higher gate charge increases driver lossUsed in consumer-grade adapters where cost sensitivity outweighs 5% efficiency penaltyChoose only if existing design uses Fairchild footprint and driver can support 42 nC without overheating

Compared with STP12NM60N, STF12NM60N trades 3.6× higher thermal resistance for elimination of insulating hardware and simplified assembly; versus FDPF12N60NZ, it delivers 27% lower gate drive loss and superior dv/dt immunity at identical voltage rating.

Availability

STF12NM60N is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, solar microinverters, and EV onboard charger auxiliary SMPS requiring stable component supply across multi-year production cycles.

Supply support for STF12NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching applications up to 600 V with minimal external components.

FAQ

What is the maximum safe operating temperature for STF12NM60N?

The STF12NM60N has a specified operating junction temperature range of −55 °C to +150 °C. Its absolute maximum rating assumes proper heatsinking to maintain Tj ≤ 150 °C under worst-case power dissipation. At TC = 100 °C, continuous drain current drops to 6.3 A per datasheet Table 1.

Does STF12NM60N require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control switching speed and suppress oscillation. For typical 100–300 kHz operation with a 1 A peak gate driver, a 4.7 Ω series resistor is recommended (per Figure 17 test circuit). Lower values increase EMI risk; higher values raise switching losses disproportionately due to Qg = 30.5 nC.

Can STF12NM60N replace STP12NM60N in an existing TO-220 footprint?

No - STF12NM60N uses TO-220FP (insulated tab), which has different mechanical dimensions and pin spacing than standard TO-220. The TO-220FP variant requires revised PCB cutouts and mounting holes; direct replacement would cause shorting or mechanical interference unless the heatsink interface is redesigned.

Is STF12NM60N suitable for use in automotive applications?

No - STF12NM60N is not qualified to AEC-Q101 and is not specified as automotive grade. ST explicitly states in its datasheet disclaimer that non-automotive-grade products may only be used in automotive applications at the user's own risk, with no warranty for life-sustaining or safety-critical functions.

STF12NM60N Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
MDmesh™ II
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
410mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
30.5 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
960 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
25W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220FP

STF12NM60N FAQ

1.How can I place an order for STF12NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STF12NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF12NM60N reliable?

The price and inventory of STF12NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF12NM60N is usually 5 days.

3.What payment methods are accepted for STF12NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF12NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF12NM60N?

STF12NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF12NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF12NM60N?

For technical support, including STF12NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF12NM60N requirements.

6.How does Aetrix verify that STF12NM60N is sourced from the original manufacturer or authorized distributors?

All STF12NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF12NM60N meets industry standards.

7.What is the process for return or replacement of STF12NM60N?

All STF12NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STF12NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF12NM60N part is unused and in its original packaging.

Return procedure for STF12NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STF12NM60N Tags

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