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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF12PF06

Name: STF12PF06
Brand: STMicroelectronics
SKU: STF12PF06
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF12PF06

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF12PF06.pdf

Description:: MOSFET P-CH 60V 8A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:5,996

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Product details

Overview

STF12PF06 from STMicroelectronics is a P-channel enhancement-mode power MOSFET in TO-220FP package, rated for 60 V V_DSS, 12 A continuous drain current at T_C = 25 °C, and typical R_DS(on) of 0.18 Ω at V_GS = −10 V. It features 100% avalanche tested ruggedness, low gate charge (16 nC), and exceptional dv/dt capability (6 V/ns), enabling reliable operation in motor control and DC-DC converter high-side switching.

For engineers reviewing the STF12PF06 datasheet, STF12PF06 pinout, STF12PF06 application, or STF12PF06 equivalent, key selection criteria include verified P-channel polarity, TO-220FP thermal resistance (5.35 °C/W), unclamped inductive energy rating (200 mJ), and source-drain diode forward voltage (2.5 V at 12 A).

Technical Context

This device operates as a high-side switch in DC-DC converters and H-bridge motor drivers, leveraging its negative gate threshold (2–4 V) and symmetrical safe operating area up to 100 °C case temperature. Its STripFET™ II process delivers high cell density and reduced gate-drain charge (Q_gd = 6 nC), supporting fast turn-off (t_f = 10 ns) with minimal Miller effect.

The integrated body diode supports synchronous rectification in buck converters, with reverse recovery time (t_rr = 100 ns) and peak recovery current (I_RRM = 5.2 A) characterized under 100 A/µs di/dt and 150 °C junction conditions - critical for snubberless flyback and half-bridge designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - maximum blocking voltage before avalanche conduction in high-side configuration
R_DS(on)	0.18 Ω (typ.) at V_GS = −10 V - determines conduction loss and thermal rise at 12 A load
I_D (T_C = 25 °C)	12 A - continuous current capability with heatsink; derates to 5.6 A at 100 °C case
E_AS	200 mJ - single-pulse avalanche energy rating ensures robustness against inductive switching transients
Q_g	16 nC - total gate charge defining drive strength requirement for <100 ns switching transitions
dv/dt	6 V/ns - minimum voltage slew rate tolerance preventing false turn-on during high-noise commutation
V_SD	2.5 V at I_SD = 12 A - forward voltage drop of integrated body diode affecting freewheeling efficiency

Pinout & Package

STF12PF06 uses the TO-220FP (Full-Pak) package: insulated plastic case with internal metal tab, no external heatsink mounting hole, and lead-free plating compliant with RoHS. Thermal resistance junction-to-case is 5.35 °C/W.

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	High-side power node	Internally connected to metal tab; must be electrically isolated from heatsink unless referenced to system ground
2 (Gate)	Control input	Requires negative V_GS (−10 V typical) for full enhancement; sensitive to ESD (±20 V max rating)
3 (Source)	Reference node / return path	Connected to load side in high-side switch; defines V_GS reference and carries full load current

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse ruggedness up to 200 mJ without parameter shift or failure
Low Q_g/Q_gd ratio	16 nC total / 6 nC gate-drain charge enables clean turn-off with minimal shoot-through risk in bridge legs
Exceptional dv/dt immunity	6 V/ns rating prevents spurious turn-on during fast voltage transients across drain-source
STripFET™ II process	Delivers 0.18 Ω R_DS(on) in TO-220FP while maintaining tight parametric distribution (±15% R_DS(on) spread)

Applications

Motor Control

DC-DC Converters

Use Scenario: High-side switch in brushed DC motor H-bridge for industrial actuators.

IC Role / Device Role / Timing Role: P-channel MOSFET controlling power delivery to motor winding; operates in linear or saturated mode depending on PWM duty cycle.

Use Value: 0.18 Ω R_DS(on) limits I²R loss to ≤26 W at 12 A, enabling compact heatsinking in space-constrained enclosures.

Use Scenario: Synchronous rectifier in non-isolated buck converter for 24 V to 5 V conversion.

IC Role / Device Role / Timing Role: Body diode provides freewheeling path; MOSFET channel conducts during low-side conduction phase to reduce conduction loss.

Use Value: 2.5 V V_SD and 100 ns t_rr minimize reverse recovery losses versus Schottky alternatives in 200 kHz switching applications.

Power Supplies

Industrial Automation

Use Scenario: Input hot-swap protection circuit limiting inrush current into 48 V telecom power systems.

IC Role / Device Role / Timing Role: High-side current limiter with gate-driven soft-start; configured with external RC timing network.

Use Value: 60 V V_DSS and 12 A rating support 48 V nominal bus with 20 % overvoltage margin and transient surge handling.

Use Scenario: Solenoid driver in programmable logic controller (PLC) output module.

IC Role / Device Role / Timing Role: Switching inductive load (100–500 mH) with controlled turn-off to suppress back-EMF spikes.

Use Value: 200 mJ E_AS rating absorbs stored inductive energy without external clamping diodes or snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540N	R_DS(on) = 0.2 Ω (typ.), higher Q_g = 27 nC, TO-220 package without insulation	Requires isolated mounting hardware; less suitable for surface-mount heatsink integration	Prefer when cost sensitivity outweighs thermal performance and isolation needs
IXTP12P06T	R_DS(on) = 0.19 Ω (typ.), lower E_AS = 120 mJ, TO-220 package with standard tab	Limited avalanche robustness in unclamped inductive loads; requires external TVS or clamp	Select only with verified SOA derating and added protection circuitry

Compared with IRF9540N and IXTP12P06T, STF12PF06 offers superior thermal interface via TO-220FP insulation, tighter R_DS(on) distribution, and guaranteed 200 mJ avalanche energy - making it preferred for high-reliability motor and power supply designs where layout space and transient immunity are constrained.

Availability

STF12PF06 is available at Aetrix Electronics and suitable for motor control, DC-DC converters, and industrial power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for STF12PF06 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

The STP/STFxxPFxx product line delivers rugged, high-voltage P-channel MOSFETs optimized for high-side switching in motor drives, power supplies, and industrial controls - emphasizing avalanche reliability, low gate charge, and thermally efficient packaging.

FAQ

Is STF12PF06 pin-compatible with STP12PF06?

Yes - both share identical pinout (Drain-Gate-Source) and TO-220/TO-220FP mechanical compatibility. However, STF12PF06 uses the insulated TO-220FP package, eliminating need for insulating washers when mounted to grounded heatsinks, unlike STP12PF06's conductive TO-220 tab.

What is the maximum recommended gate drive voltage for reliable operation?

The absolute maximum V_GS is ±20 V, but STMicroelectronics specifies −10 V for full enhancement and optimal R_DS(on). Driving below −8 V increases R_DS(on) significantly; exceeding −12 V yields diminishing returns and risks gate oxide stress over repeated cycles.

Can STF12PF06 replace N-channel MOSFETs in high-side configurations?

No - it is a P-channel device designed specifically for high-side switching without level-shifting circuitry. Replacing an N-channel high-side switch would require redesigning gate drive to deliver negative V_GS relative to source, not direct substitution.

Does STF12PF06 require a gate resistor for stability?

Yes - a series gate resistor (typically 4.7–10 Ω) is required to dampen ringing caused by gate-drain capacitance (C_rss = 75 pF) and PCB inductance. Omission risks oscillation during switching, increased EMI, and accelerated gate oxide degradation.

STF12PF06 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 200mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 850 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 225W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF12PF06 FAQ

1.How can I place an order for STF12PF06 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF12PF06 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF12PF06 reliable?

The price and inventory of STF12PF06 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF12PF06 is usually 5 days.

3.What payment methods are accepted for STF12PF06?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF12PF06 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF12PF06?

STF12PF06 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF12PF06 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF12PF06?

For technical support, including STF12PF06 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF12PF06 requirements.

6.How does Aetrix verify that STF12PF06 is sourced from the original manufacturer or authorized distributors?

All STF12PF06 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF12PF06 meets industry standards.

7.What is the process for return or replacement of STF12PF06?

All STF12PF06 units undergo pre-shipment inspection (PSI). If there is an issue with STF12PF06, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF12PF06 part is unused and in its original packaging.

Return procedure for STF12PF06:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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