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STMicroelectronics STF13N60DM2

Name: STF13N60DM2
Brand: STMicroelectronics
SKU: STF13N60DM2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF13N60DM2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF13N60DM2.pdf

Description:: MOSFET N-CH 600V 11A TO220FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STF13N60DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh™ DM2 series, featuring a fast-recovery body diode, 600 V V_DS, 0.365 Ω max R_DS(on), and 11 A continuous drain current at T_case = 25 °C. It is engineered for high-efficiency bridge topologies and ZVS phase-shift converters.

For engineers reviewing the STF13N60DM2 datasheet, STF13N60DM2 pinout, STF13N60DM2 application, or STF13N60DM2 equivalent, key selection criteria include avalanche ruggedness (E_AS = 340 mJ), ultra-low Q_g (19 nC), fast diode recovery (t_rr = 90 ns @ T_j = 25 °C), dv/dt capability (50 V/ns), and built-in Zener-protected gate.

Technical Context

This MOSFET employs ST's MDmesh™ DM2 silicon technology to minimize conduction and switching losses simultaneously. Its optimized charge distribution yields low Q_rr (252 nC) and t_rr while maintaining robust 600 V breakdown voltage and 100% avalanche-tested reliability.

The integrated fast-recovery body diode eliminates need for external anti-parallel diodes in synchronous rectification and resonant topologies. Gate-source Zener protection (±30 V) enables direct drive without external clamping, and R_thj-case = 5 °C/W supports high-power density thermal design in TO-220FP.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in hard-switched converters with margin.
R_DS(on) max	0.365 Ω - Enables <1.5 W conduction loss at 11 A, reducing heatsink requirements.
Q_g	19 nC - Low gate charge allows efficient 100+ kHz switching with standard gate drivers.
t_rr	90 ns - Minimizes reverse recovery loss in LLC and phase-shift full-bridge circuits.
E_AS	340 mJ - Rated single-pulse avalanche energy ensures robustness during transient overloads.
dv/dt ruggedness	50 V/ns - Sustains rapid voltage transients without spurious turn-on in high-dV/dt environments.
V_(BR)GSO	±30 V - Integrated back-to-back Zener diodes protect gate oxide from ESD and overvoltage.

Pinout & Package

Supplied in TO-220FP package: insulated flange, vertical mounting, 3-pin through-hole configuration with creepage/clearance compliant to 2500 V_RMS isolation rating.

Pin/Terminal	Circuit Role	Design Meaning
D (Pin 2)	Drain	Main high-side power terminal; electrically connected to metal tab; requires heatsinking and isolation.
G (Pin 1)	Gate	Control input; Zener-protected; low C_iss (730 pF) reduces driver power demand.
S (Pin 3)	Source	Power return path; referenced to gate drive ground; carries full load current and diode reverse recovery current.

Key Features

Feature	Design Value
MDmesh™ DM2 silicon	Optimized charge balance delivers 30% lower Q_rr vs prior-generation 600 V MOSFETs.
Fully rated avalanche capability	100% production-tested for E_AS = 340 mJ, enabling reliable unclamped inductive switching.
Fast-recovery body diode	t_rr = 90 ns and Q_rr = 252 nC allow use in synchronous rectifier and resonant converter legs without external diode.
Zener-protected gate	±30 V gate-source Zener clamps transients, eliminating need for external TVS or resistor-divider protection.
Low C_oss eq.	70 pF equivalent output capacitance minimizes capacitive turn-off loss and improves ZVS initiation.

Applications

Server PSU Primary Switch

Industrial Motor Drive Inverter

Use Scenario: High-density 3.3 kW server power supply operating in asymmetric half-bridge topology with 100–200 kHz switching.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 400 V DC bus; conducts during active PWM phase and blocks during dead time.

Use Value: Low R_DS(on) (0.310 Ω typ.) and low Q_g reduce conduction and gate drive losses; fast diode enables soft-switching during dead-time commutation.

Use Scenario: 7.5 kW variable-frequency drive feeding 3-phase induction motor in HVAC blower system.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 6-pack inverter module; switches 600 V DC link under 15 kHz PWM with regenerative braking.

Use Value: Avalanche-rated operation handles inductive kickback during fault shutdown; dv/dt ruggedness prevents false triggering during fast bus transitions.

Solar Microinverter H-Bridge

EV Onboard Charger PFC Stage

Use Scenario: 300 W microinverter converting PV DC to grid-synchronized AC using full-bridge topology with transformer isolation.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge leg; conducts bidirectionally during freewheeling and reverse recovery phases.

Use Value: Ultra-low t_rr (90 ns) and Q_rr (252 nC) suppress shoot-through risk and reduce diode switching loss by >40% vs standard MOSFETs.

Use Scenario: Two-switch forward PFC stage in 6.6 kW EV onboard charger, operating at 65 kHz with 400 V output.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM); sustains high duty cycle with low conduction loss.

Use Value: R_DS(on) = 0.310 Ω typ. limits I²R loss to <1.2 W at 11 A; TO-220FP package enables direct heatsink mounting with 5 °C/W thermal resistance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF13N60M2	Same package and V_DS, but MDmesh™ M2 silicon: higher Q_rr (420 nC), slower t_rr (150 ns), no Zener gate protection.	Lacks integrated gate Zener; less suitable for ESD-prone or high-dv/dt industrial environments.	Select when cost sensitivity outweighs need for fast diode recovery or gate protection.
IPP60R190C7	650 V CoolMOS™ C7: lower R_DS(on) (0.19 Ω), higher Q_g (34 nC), no integrated Zener, TO-220FP package.	Higher gate drive power required; no avalanche rating published; not 100% avalanche tested.	Prefer for ultra-high efficiency at light loads where Q_g-related losses dominate, but verify system-level avalanche robustness.

Compared with STF13N60M2 and IPP60R190C7, STF13N60DM2 uniquely combines Zener gate protection, industry-leading t_rr/Q_rr, and production-verified avalanche capability-making it optimal for mission-critical, high-reliability ZVS and resonant converters where diode behavior and transient immunity are decisive.

Availability

STF13N60DM2 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, solar microinverters, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STF13N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MEMS, power, and microcontroller solutions for automotive, industrial, and consumer markets.

This device belongs to the MDmesh™ DM2 high-voltage Power MOSFET product line, developed specifically for high-frequency, high-efficiency resonant and soft-switching power converters demanding low Q_rr, fast t_rr, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF13N60DM2 supports 7 A continuous drain current at T_case = 100 °C, as specified in Table 1 of DS11595 Rev 3. This derating reflects thermal limits of the TO-220FP package (R_thj-case = 5 °C/W) and ensures safe operation within T_j ≤ 150 °C under sustained load conditions.

Does this MOSFET require an external gate resistor for stability?

A gate resistor is recommended to dampen ringing and control switching speed, especially in high-dV/dt applications. Typical values range from 4.7 Ω to 22 Ω depending on driver strength and layout parasitics; Figure 13 in DS11595 shows test circuit with RG = 4.7 Ω for switching time characterization.

Can STF13N60DM2 replace STF13N60M2 in existing designs?

Yes, STF13N60DM2 is a direct drop-in replacement for STF13N60M2 in most cases: same pinout, package, and voltage/current ratings. However, its faster diode (t_rr = 90 ns vs 150 ns) and Zener gate protection may alter snubber requirements and improve ESD immunity-design validation is advised.

Is the TO-220FP package electrically isolated?

Yes-the TO-220FP package provides 2500 V_RMS insulation withstand voltage between all three leads and the external heatsink (per Table 1), making it suitable for isolated topologies without additional insulating hardware, provided creepage and clearance meet end-equipment safety standards.

STF13N60DM2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 365mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 730 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF13N60DM2 FAQ

1.How can I place an order for STF13N60DM2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF13N60DM2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF13N60DM2 reliable?

The price and inventory of STF13N60DM2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF13N60DM2 is usually 5 days.

3.What payment methods are accepted for STF13N60DM2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF13N60DM2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF13N60DM2?

STF13N60DM2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF13N60DM2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF13N60DM2?

For technical support, including STF13N60DM2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF13N60DM2 requirements.

6.How does Aetrix verify that STF13N60DM2 is sourced from the original manufacturer or authorized distributors?

All STF13N60DM2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF13N60DM2 meets industry standards.

7.What is the process for return or replacement of STF13N60DM2?

All STF13N60DM2 units undergo pre-shipment inspection (PSI). If there is an issue with STF13N60DM2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF13N60DM2 part is unused and in its original packaging.

Return procedure for STF13N60DM2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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