STMicroelectronics STF13N65M2

Overview

STF13N65M2 from STMicroelectronics is an N-channel 650 V, 10 A Power MOSFET in TO-220FP package, fabricated with MDmesh M2 technology. It delivers 370 mΩ typical R_DS(on), 17 nC total gate charge, and 100% avalanche-tested ruggedness for high-efficiency SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STF13N65M2 datasheet, STF13N65M2 pinout, STF13N65M2 application, or STF13N65M2 equivalent, key selection criteria include its low C_oss profile (27.5 pF), Zener-protected gate, 50 V/ns dv/dt ruggedness, and 2.5 kV insulation withstand voltage - all critical for reliable high-voltage switching in compact converters.

Technical Context

This device uses a strip-based MDmesh M2 vertical structure to minimize conduction loss while optimizing dynamic performance. Its 168.5 pF equivalent output capacitance (C_oss,eq) and 7.8 ns rise time enable fast, low-loss hard-switching up to 100 kHz in continuous conduction mode topologies.

The integrated Zener-protected gate ensures ±25 V V_GS tolerance, while the 1.8 A repetitive avalanche current rating and 350 mJ single-pulse E_AS support unclamped inductive load robustness without external snubbers in flyback or LLC resonant designs.

Key Specifications

Pinout & Package

TO-220FP (Type B) package with insulated tab: thermally conductive but electrically isolated mounting surface rated for 2.5 kV RMS insulation. Compact footprint (L3 = 28.6–30.6 mm) optimized for forced-air-cooled industrial PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STF12N65M2, STF13N65M2 trades 2 A current headroom for tighter R_DS(on) tolerance and lower gate charge; versus IPP65R420CFD7, it offers superior dv/dt ruggedness (50 vs. 35 V/ns) and higher E_AS, making it more suitable for unclamped inductive loads despite slower diode recovery.

Availability

STF13N65M2 is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, and solar microinverter DC-DC stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for STF13N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, delivering automotive, industrial, power, and analog solutions with vertical manufacturing and broad IP portfolio.

This device belongs to the MDmesh M2 Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switched-mode power supplies where low R_DS(on), controlled C_oss, and avalanche robustness are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF13N65M2 supports 6.3 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10586 Rev 3. This derating reflects thermal limits imposed by the TO-220FP package's 5 °C/W junction-to-case resistance and safe operating area constraints at elevated temperatures.

Does the device include an integrated body diode, and what are its recovery characteristics?

Yes, STF13N65M2 features a monolithic source-drain body diode with 312 ns reverse recovery time (trr) and 2.7 µC reverse recovery charge (Qrr) at T_J = 25 °C, per Table 7. At 150 °C, trr increases to 464 ns and Qrr to 4.1 µC, indicating strong temperature dependence that must be accounted for in high-temperature PFC designs.

Can STF13N65M2 be used in avalanche mode, and what are the rated limits?

Yes - STF13N65M2 is 100% avalanche tested with a rated repetitive avalanche current (I_AR) of 1.8 A and single-pulse avalanche energy (E_AS) of 350 mJ at T_J = 25 °C. These values assume V_DD = 50 V and are pulse-width limited by junction temperature; operation beyond these limits risks permanent degradation.

Is the TO-220FP package electrically insulated, and what is its isolation rating?

Yes - the TO-220FP (Type B) package provides electrical insulation between all three leads and the external heatsink, rated at 2.5 kV RMS for 1 second at T_C = 25 °C (Table 1, V_ISO). This allows direct mounting to grounded metal chassis without additional insulating hardware in safety-critical industrial systems.