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STMicroelectronics STF13N95K3

Part No.:
STF13N95K3
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixSTF13N95K3.pdf
Description:
MOSFET N-CH 950V 10A TO220FP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:975

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Product details

Overview

STF13N95K3 from STMicroelectronics is an N-channel 950 V, 680 mΩ typ. (850 mΩ max), 10 A MDmesh K3 Power MOSFET in TO-220FP package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial inverters. It features 100% avalanche tested ruggedness, 9 V/ns dv/dt capability, and Zener-protected gate.

For engineers reviewing the STF13N95K3 datasheet, STF13N95K3 pinout, STF13N95K3 application, or STF13N95K3 equivalent, key selection criteria include RDS(on) at 10 V drive, EAS = 400 mJ, Qg = 51 nC, Coss = 117 pF, and TO-220FP thermal resistance RthJC = 3.13 °C/W.

Technical Context

This device employs ST's optimized vertical MDmesh K3 structure to achieve ultra-low on-resistance while maintaining high voltage blocking (950 V) and fast dynamic performance. Its low Ciss (1620 pF), Crss (1.2 pF), and Co(er) (131 pF) enable efficient high-frequency hard-switching operation up to several hundred kHz.

The integrated source-drain diode delivers improved reverse recovery with trr = 500 ns (TJ = 25 °C) and Qrr = 9 µC, reducing switching losses in bridge configurations. The Zener-protected gate ensures ±30 V VGS robustness against transients.

Key Specifications

ParameterValue and Actual Design Meaning
VDS950 V - supports 800 V DC bus designs with 150 V margin for surge and ringing.
RDS(on) max850 mΩ @ VGS = 10 V, ID = 5 A - enables <1 W conduction loss at 10 A continuous current.
ID cont @ TC = 100 °C6 A - defines usable current in thermally constrained PCB-mount applications.
EAS400 mJ @ TJ = 25 °C - guarantees single-pulse unclamped inductive switching survival in PFC and flyback snubbers.
Qg51 nC - determines gate driver power requirement and switching speed trade-off in 100–300 kHz converters.
trr500 ns @ ISD = 10 A, di/dt = 100 A/µs - limits commutation loss and EMI in half-bridge resonant topologies.
RthJC3.13 °C/W - enables 40 W dissipation with ≤125 °C junction rise above case in TO-220FP mounting.

Pinout & Package

STF13N95K3 is housed in a TO-220FP (Type B) package with isolated tab, offering enhanced creepage and thermal performance over standard TO-220. The plastic body provides electrical isolation between drain (tab) and mounting surface.

Pin/TerminalCircuit RoleDesign Meaning
Tab (Pin 2)Drain (D)High-voltage output node; electrically isolated metal tab serves as primary heat sink interface and must be mounted with insulating pad or bushing.
Pin 1Gate (G)Control input requiring 10 V drive for full enhancement; Zener-protected to ±30 V for transient immunity.
Pin 3Source (S)Power return path and reference for gate drive; connects to low-side switch node or ground plane.

Key Features

FeatureDesign Value
100% avalanche testedGuarantees EAS = 400 mJ reliability without derating in unclamped inductive switching.
Extremely high dv/dt capability9 V/ns rating prevents spurious turn-on during fast voltage transients in high-side configurations.
Very low intrinsic capacitanceCoss = 117 pF and Crss = 1.2 pF reduce capacitive switching losses and improve efficiency at >200 kHz.
Improved diode reverse recoverytrr = 500 ns and Qrr = 9 µC minimize shoot-through risk and EMI in synchronous rectification and LLC resonant converters.
Zener-protected gateIntegrated gate-body Zener clamps VGS to ±20 V during ESD or layout-induced overshoot, eliminating external protection components.

Applications

Industrial AC-DC Power SuppliesTelecom Rectifier Modules

Use Scenario: Primary-side switch in 1–3 kW offline flyback or forward converters with universal AC input (85–265 VAC).

IC Role / Device Role / Timing Role: High-voltage N-channel switching element operating at 65–130 kHz with zero-voltage switching assistance.

Use Value: 950 V rating accommodates 700 V DC link peaks with safety margin; 850 mΩ RDS(on) keeps conduction loss below 0.85 W at 10 A RMS.

Use Scenario: Active clamp forward or phase-shifted full-bridge primary switch in 48 V telecom rectifiers.

IC Role / Device Role / Timing Role: Hard-switched high-side switch handling 380–400 V DC bus with repetitive 100–200 kHz operation.

Use Value: 9 V/ns dv/dt immunity prevents false triggering during bus voltage transitions; 400 mJ EAS absorbs clamp energy without failure.

Server PSU PFC StagesIndustrial Motor Drive Inverters

Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for 3–5 kW server power supplies.

IC Role / Device Role / Timing Role: High-efficiency, high-reliability switching device driven by dedicated PFC controller with 65–120 kHz PWM.

Use Value: Low Qg (51 nC) reduces gate drive loss; improved diode trr minimizes reverse recovery loss in boost diode commutation.

Use Scenario: DC-link switching element in 3-phase inverter stages for HVAC compressors or pump drives (0.75–2.2 kW).

IC Role / Device Role / Timing Role: Medium-speed (4–16 kHz) IGBT replacement in high-voltage inverter legs with snubberless operation.

Use Value: TO-220FP isolation allows direct heatsink mounting without additional insulation; 100% avalanche test ensures robustness against motor short-circuit transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP13N95K3Same die, TO-220 (non-FP) package; RthJC = 0.66 °C/W but no isolation between tab and leads.Requires insulated mounting hardware; better thermal performance but higher layout complexity for isolation.Select when board-level isolation is managed externally and lower thermal resistance is critical.
STW13N95K3Same die, TO-247 package; RthJC = 0.66 °C/W, higher power handling (190 W), larger footprint.Suitable for >15 A average current or forced-air cooled systems; not drop-in compatible with TO-220FP footprints.Select for higher-power designs where TO-220FP thermal limit (40 W) is exceeded.

Compared with STP13N95K3 and STW13N95K3, STF13N95K3 uniquely combines certified electrical isolation, standardized TO-220FP footprint, and 40 W power capability-making it optimal for space-constrained, safety-certified AC-DC power supplies where creepage and thermal management must coexist.

Availability

STF13N95K3 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom rectifier modules, and server PSU PFC stages requiring stable component supply and long-term design-in support.

Supply support for STF13N95K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.

The MDmesh K3 product line targets high-efficiency, high-reliability high-voltage power conversion-specifically engineered for 800 V+ DC bus applications in industrial, telecom, and server power systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF13N95K3 supports 6 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS6262 Rev 4. This reflects thermal derating due to junction-to-case resistance (3.13 °C/W) and maximum rated junction temperature (150 °C), ensuring safe operation under sustained load in enclosed environments.

Does STF13N95K3 require external gate protection?

No. The device integrates a Zener diode between gate and source, clamping VGS to ±20 V under transient conditions. This eliminates the need for external gate protection components in typical SMPS layouts, provided PCB layout minimizes inductive gate loops and drive impedance remains within recommended limits (e.g., RG = 4.7 Ω).

How does its reverse recovery performance compare to standard silicon MOSFETs?

STF13N95K3 achieves trr = 500 ns and Qrr = 9 µC at 25 °C-up to 40% lower Qrr than legacy 900 V MOSFETs. This results from MDmesh K3's optimized body diode structure, directly reducing commutation loss and EMI in bridge topologies without requiring external SiC or Schottky catch diodes.

Can STF13N95K3 be used in place of STP13N95K3 without layout changes?

No. Although both share identical die characteristics, STF13N95K3 uses TO-220FP (isolated tab), whereas STP13N95K3 uses TO-220 (conductive tab). Substitution requires verifying creepage/clearance compliance, updating thermal interface design (insulating pad mandatory), and confirming mechanical fit-no direct footprint compatibility exists.

STF13N95K3 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
SuperMESH3™
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
950 V
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
850mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
51 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1620 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
40W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220FP

STF13N95K3 FAQ

1.How can I place an order for STF13N95K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF13N95K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF13N95K3 reliable?

The price and inventory of STF13N95K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF13N95K3 is usually 5 days.

3.What payment methods are accepted for STF13N95K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF13N95K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF13N95K3?

STF13N95K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF13N95K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF13N95K3?

For technical support, including STF13N95K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF13N95K3 requirements.

6.How does Aetrix verify that STF13N95K3 is sourced from the original manufacturer or authorized distributors?

All STF13N95K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF13N95K3 meets industry standards.

7.What is the process for return or replacement of STF13N95K3?

All STF13N95K3 units undergo pre-shipment inspection (PSI). If there is an issue with STF13N95K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF13N95K3 part is unused and in its original packaging.

Return procedure for STF13N95K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STF13N95K3 Tags

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