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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF13NK50Z

Name: STF13NK50Z
Brand: STMicroelectronics
SKU: STF13NK50Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF13NK50Z

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF13NK50Z.pdf

Description:: MOSFET N-CH 500V 11A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:1,745

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Product details

Overview

STF13NK50Z from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET rated for 500 V drain-source voltage, 480 mΩ maximum R_DS(on), and 11 A continuous drain current at T_C = 25 °C. It delivers high dv/dt capability (4.5 V/ns), 100% avalanche tested ruggedness (E_AS = 240 mJ), and gate charge minimization (Q_g = 47 nC) for hard-switching SMPS primary-side switching.

For engineers reviewing the STF13NK50Z datasheet, STF13NK50Z pinout, STF13NK50Z application, or STF13NK50Z equivalent, key selection criteria include its TO-220FP package thermal resistance (R_thJC = 4.17 °C/W), Zener-protected gate, unclamped inductive avalanche rating, and source-drain diode recovery performance (Q_rr = 3.4 µC, t_rr = 380 ns).

Technical Context

This device implements ST's SuperMESH process-a refined iteration of PowerMESH-optimized to reduce on-resistance while preserving high-voltage robustness. Its Zener-protected gate structure enables ±30 V V_GS tolerance and intrinsic ESD immunity (2.5 kV HBM), critical for industrial power supply startup transients.

The MOSFET supports unclamped inductive switching with guaranteed repetitive avalanche capability (I_AR = 11 A) and exhibits low Crss (45 pF) and Coss_eq (50 pF), enabling fast, low-loss turn-off in flyback and resonant converters operating up to 100 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Supports 400 V DC bus designs with 25% margin for line surges and ringing.
R_DS(on) max	480 mΩ - Limits conduction loss to ≤3.2 W at 9 A RMS in 25 °C ambient with heatsink.
I_D cont @ T_C=25°C	11 A - Enables ≥150 W output in single-switch forward or flyback topologies.
E_AS	240 mJ - Withstands single-pulse energy from transformer leakage inductance without failure.
dv/dt capability	4.5 V/ns - Suppresses false turn-on during high-slew-rate switching in noisy EMI environments.
Q_g	47 nC - Reduces gate drive power requirement and allows use of low-current drivers like STMicro's STGAP2S.
t_r/t_f	23 ns / 24 ns - Enables clean, low-EMI transitions with minimal overlap loss in hard-switched operation.

Pinout & Package

Supplied in TO-220FP (Full-Pak) package: insulated plastic case with integral heat sink tab, 3-pin vertical mounting, creepage distance optimized for 2.5 kV RMS isolation between leads and heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate	Control terminal; Zener-clamped to ±30 V; requires <2.3 Ω series gate resistor for optimal dv/dt immunity.
D (Pin 2)	Drain	High-voltage output node; electrically connected to metal tab; must be isolated from heatsink unless floating design.
S (Pin 3)	Source	Power return path; referenced to driver ground; carries full load current and reverse diode conduction.

Key Features

Feature	Design Value
Zener-protected gate	Integrated bidirectional Zener clamps gate-to-source at ±30 V, eliminating need for external TVS in most SMPS gate drive circuits.
100% avalanche tested	Every unit validated for unclamped inductive switching at I_AR = 11 A, ensuring field reliability in transformer-coupled topologies.
SuperMESH technology	Reduces R_DS(on) by ~15% vs prior PowerMESH generation while maintaining identical 500 V breakdown and thermal footprint.
Low Crss (45 pF)	Minimizes Miller-induced gate oscillation and improves noise immunity during high-dv/dt commutation events.
TO-220FP insulation	2.5 kV RMS isolation between all three leads and external heatsink enables direct mounting without insulating pads in Class II AC/DC adapters.

Applications

AC/DC Adapter Primary Switch

Industrial Flyback PSU

Use Scenario: 65 W universal-input offline adapter for medical auxiliary supplies.

IC Role / Device Role / Timing Role: Main switch in discontinuous conduction mode (DCM) flyback converter operating at 65 kHz.

Use Value: Zener protection eliminates external gate clamp; 240 mJ E_AS absorbs leakage spike without snubber redesign.

Use Scenario: 120 W open-frame flyback supplying 24 V/5 A to PLC I/O modules.

IC Role / Device Role / Timing Role: Primary-side power switch handling 400 V DC bus with 100 kHz PWM control.

Use Value: 4.5 V/ns dv/dt rating prevents spurious turn-on during EFT bursts; TO-220FP isolation simplifies safety certification.

LED Driver Bulk Switch

UPS Inverter Half-Bridge

Use Scenario: Constant-current LED driver for street lighting with 350 V DC link.

IC Role / Device Role / Timing Role: High-side switch in buck-derived topology with 10–25 kHz dimming frequency.

Use Value: Low Q_gd/Q_gs ratio (28 nC / 9 nC) ensures sharp turn-off edge, reducing LED current ripple.

Use Scenario: Auxiliary half-bridge in 1 kVA online UPS inverter stage.

IC Role / Device Role / Timing Role: Low-side switch in 50 Hz–1 kHz sinusoidal PWM bridge driving transformer-coupled output.

Use Value: 100% avalanche-tested ruggedness sustains repeated short-circuit events during battery transfer switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP13NK50Z	Same die, TO-220 (non-insulated) package; R_thJC = 3.5 °C/W but requires insulating washer for heatsink mounting.	Lacks 2.5 kV isolation; unsuitable for double-insulated AC/DC adapters without additional creepage measures.	Select when cost-sensitive and mechanical isolation can be implemented externally.
FQP13N50CT	500 V, 450 mΩ typ., 13 A; no Zener gate protection; higher Q_g (65 nC); not avalanche-rated.	Requires external gate clamp and snubber tuning; not recommended for unclamped inductive loads.	Select only in non-avalanche, low-noise environments with robust gate drive design.

Compared with STP13NK50Z, STF13NK50Z trades 0.67 °C/W higher junction-to-case thermal resistance for certified isolation and simplified safety compliance; versus FQP13N50CT, it adds gate robustness and avalanche guarantee at modest R_DS(on) penalty.

Availability

STF13NK50Z is available at Aetrix Electronics and suitable for AC/DC adapters, industrial flyback PSUs, LED driver bulk switches, and UPS inverter stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for STF13NK50Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

The SuperMESH Power MOSFET product line targets high-efficiency, high-reliability offline switching applications where avalanche ruggedness, gate protection, and thermal performance are critical system requirements.

FAQ

What is the maximum safe operating temperature for STF13NK50Z?

The device has an operating junction temperature range of –55 °C to 150 °C. For reliable long-term operation, peak T_J should be limited to 130 °C under continuous conduction, based on SOA curve derating and thermal cycling endurance data in DS5422 Figure 1.

Does STF13NK50Z require an external gate resistor?

Yes - a series gate resistor (typically 10–47 Ω) is required to dampen ringing, limit peak gate current, and ensure controlled dv/dt during turn-on. The internal gate resistance is 2.3 Ω; omitting external resistance risks overshoot and parasitic oscillation.

Can STF13NK50Z replace STW13NK50Z in existing designs?

No - STW13NK50Z uses TO-247 package with lower R_thJC (1.5 °C/W) and higher I_D (13 A), while STF13NK50Z is TO-220FP with different thermal and mechanical interfaces. PCB layout and heatsink interface must be redesigned.

Is the source-drain diode suitable for synchronous rectification?

No - the body diode has t_rr = 380–425 ns and Q_rr = 3.4–3.9 µC, making it unsuitable for high-frequency synchronous rectification. It is intended only for freewheeling in flyback/foward converters below 100 kHz.

STF13NK50Z Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 480mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF13NK50Z FAQ

1.How can I place an order for STF13NK50Z through Aetrix?

Please submit a Request for Quotation (RFQ) for STF13NK50Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF13NK50Z reliable?

The price and inventory of STF13NK50Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF13NK50Z is usually 5 days.

3.What payment methods are accepted for STF13NK50Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF13NK50Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF13NK50Z?

STF13NK50Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF13NK50Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF13NK50Z?

For technical support, including STF13NK50Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF13NK50Z requirements.

6.How does Aetrix verify that STF13NK50Z is sourced from the original manufacturer or authorized distributors?

All STF13NK50Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF13NK50Z meets industry standards.

7.What is the process for return or replacement of STF13NK50Z?

All STF13NK50Z units undergo pre-shipment inspection (PSI). If there is an issue with STF13NK50Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF13NK50Z part is unused and in its original packaging.

Return procedure for STF13NK50Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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