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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF13NM50N

Name: STF13NM50N
Brand: STMicroelectronics
SKU: STF13NM50N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF13NM50N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF13NM50N.pdf

Description:: MOSFET N-CH 500V 12A TO220FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STF13NM50N from STMicroelectronics is an N-channel 500 V, 12 A MDmesh™ II Power MOSFET in TO-220FP package, featuring 0.25 Ω typical R_DS(on), 30 nC total gate charge, and 100% avalanche tested robustness. It serves as a high-efficiency primary-side switch in offline SMPS, PFC stages, and industrial DC-DC converters operating up to 150 °C junction temperature.

For engineers reviewing the STF13NM50N datasheet, STF13NM50N pinout, STF13NM50N application, or STF13NM50N equivalent, key selection criteria include its 500 V V_DSS, low 0.32 Ω max R_DS(on), 30 nC Q_g, 15 V/ns dv/dt capability, and TO-220FP thermal resistance of 5 °C/W (junction-to-case).

Technical Context

This MOSFET employs ST's second-generation MDmesh™ vertical structure with strip layout, delivering industry-leading conduction and switching loss trade-offs for hard-switched topologies. Its 960 pF C_iss, 50 pF C_oss, and 5 pF C_rss support fast, controlled turn-on/turn-off with minimal Miller effect.

The device integrates a robust body diode with 1.3 V forward voltage at 12 A and 300 ns reverse recovery time at 100 V, enabling reliable operation in flyback and resonant converters without external snubbing in many cases.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - Withstands full mains rectified voltage in universal-input 85–265 VAC SMPS designs
R_DS(on) max	0.32 Ω @ V_GS = 10 V, I_D = 6 A - Enables <1.5 W conduction loss at 12 A continuous drain current
Q_g	30 nC - Reduces gate drive power and enables use with standard 1–2 A peak gate drivers
T_j max	150 °C - Supports high-temperature operation in enclosed industrial power supplies
R_thj-case	5 °C/W - Allows 100 W dissipation with modest heatsinking in TO-220FP package
E_AS	200 mJ - Withstands single-pulse inductive energy without failure under unclamped switching
dv/dt rating	15 V/ns - Resists false turn-on during high-speed switching in noisy high-voltage environments

Pinout & Package

STF13NM50N uses the TO-220FP (Full-Pak) package: insulated plastic case with integral heatsink tab, 3-pin vertical mounting, and creepage/clearance optimized for high-voltage isolation. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 10 V logic-level signal; requires ≤5 Ω series gate resistor to damp ringing and limit peak current
Pin 2 (Drain)	High-voltage power terminal	Connected to primary winding or bulk capacitor; electrically tied to metal tab for direct heatsinking
Pin 3 (Source)	Power return / reference node	Serves as local ground reference for gate driver; must be low-inductance path to minimize switching noise

Key Features

Feature	Design Value
MDmesh™ II technology	Combines ultra-low R_DS(on) × Q_g figure-of-merit (7.5 Ω·nC) for optimal efficiency in 65–100 kHz SMPS
100% avalanche rated	Guarantees ruggedness against inductive kickback without derating-critical for PFC and flyback reliability
Low C_oss (50 pF)	Minimizes turn-off losses and improves light-load efficiency in quasi-resonant and LLC converters
ECOPACK® compliant	Lead-free second-level interconnect meets RoHS and JEDEC JESD97 standards for green manufacturing
TO-220FP insulation	Plastic-isolated tab eliminates need for insulating pads or shoulder washers in heatsink mounting

Applications

Industrial AC-DC Power Supplies

Server & Telecom Rectifiers

Use Scenario: 500 W open-frame power supply for PLC controllers with universal AC input and active PFC stage.

IC Role / Device Role / Timing Role: Primary-side switching transistor in boost PFC and forward converter power stage.

Use Value: 0.25 Ω R_DS(on) reduces conduction loss by >25% vs. legacy 550 V MOSFETs, improving full-load efficiency to >94%.

Use Scenario: Hot-swap capable 12 V/48 V intermediate bus converter in 19-inch rack-mounted telecom equipment.

IC Role / Device Role / Timing Role: High-side switch in synchronous rectified forward topology operating at 100 kHz.

Use Value: 30 nC Q_g allows clean 20 ns rise/fall times with low-power gate drivers, reducing EMI filtering cost.

LED Streetlight Drivers

Industrial Motor Drives

Use Scenario: Constant-current 150 W LED driver with dimming, operating outdoors at -40 °C to +85 °C ambient.

IC Role / Device Role / Timing Role: Main switch in isolated flyback controller with primary-side regulation.

Use Value: 150 °C T_j max and 15 V/ns dv/dt rating ensure stable operation under lightning surge and thermal cycling stress.

Use Scenario: 3-phase inverter stage in HVAC variable-frequency drive for centrifugal pumps.

IC Role / Device Role / Timing Role: Low-side switch in IGBT gate driver auxiliary supply and braking chopper circuit.

Use Value: 200 mJ E_AS withstands regenerative energy spikes during rapid deceleration without clamping diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP13NM50N	Same die, TO-220 (non-isolated tab); R_thj-case = 1.25 °C/W vs. 5 °C/W	Requires insulating pad and shoulder washer; better for lower-power or forced-air-cooled designs	Select when higher thermal performance justifies added mechanical complexity and isolation risk
FDPF13N50	ON Semiconductor SuperFET II; 0.30 Ω R_DS(on), 32 nC Q_g, TO-220FP	Higher gate charge increases driver loss; slightly lower V_DSS margin (500 V nominal)	Choose if cross-qualified for dual-sourcing with identical footprint and thermal profile

Compared with STP13NM50N, STF13NM50N trades 4× higher junction-to-case thermal resistance for electrical isolation and simplified mounting; versus FDPF13N50, it offers lower Q_g and tighter V_DSS distribution, improving efficiency and design margin in high-reliability systems.

Availability

STF13NM50N is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server rectifiers, and LED streetlight drivers requiring stable component supply and long-term manufacturability.

Supply support for STF13NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The MDmesh™ Power MOSFET product line targets high-efficiency, high-voltage switching applications-including SMPS, PFC, lighting, and motor control-where low R_DS(on) × Q_g and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current for STF13NM50N at 100 °C case temperature?

The maximum continuous drain current is 6 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This reflects thermal derating due to reduced heat dissipation capability at elevated temperatures, while maintaining safe SOA operation and 150 °C maximum junction temperature.

Does STF13NM50N require a negative gate voltage for reliable turn-off?

No. STF13NM50N has a gate threshold voltage (V_GS(th)) of 2–4 V and is fully enhanced at V_GS = 10 V. A gate drive of 0 V is sufficient for turn-off; applying –5 V is unnecessary and not recommended per ST's application guidance for this device family.

Can STF13NM50N be used in synchronous rectification topologies?

No. STF13NM50N is an N-channel high-voltage MOSFET optimized for primary-side switching, not secondary-side synchronous rectification. Its 500 V V_DSS and 0.32 Ω R_DS(on) are mismatched for low-voltage, high-current output stages where 30–100 V, <10 mΩ devices are required.

Is STF13NM50N suitable for use in automotive under-hood applications?

No. STF13NM50N is not qualified to AEC-Q101 and lacks automotive-grade screening, temperature range extension beyond 150 °C, or guaranteed parametric stability over automotive qualification life cycles. It is intended for industrial and commercial power applications only.

STF13NM50N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 320mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 960 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF13NM50N FAQ

1.How can I place an order for STF13NM50N through Aetrix?

Please submit a Request for Quotation (RFQ) for STF13NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF13NM50N reliable?

The price and inventory of STF13NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF13NM50N is usually 5 days.

3.What payment methods are accepted for STF13NM50N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF13NM50N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF13NM50N?

STF13NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF13NM50N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF13NM50N?

For technical support, including STF13NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF13NM50N requirements.

6.How does Aetrix verify that STF13NM50N is sourced from the original manufacturer or authorized distributors?

All STF13NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF13NM50N meets industry standards.

7.What is the process for return or replacement of STF13NM50N?

All STF13NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STF13NM50N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF13NM50N part is unused and in its original packaging.

Return procedure for STF13NM50N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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