Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF13NM60ND

Name: STF13NM60ND
Brand: STMicroelectronics
SKU: STF13NM60ND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STF13NM60ND

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF13NM60ND.pdf

Description:: MOSFET N-CH 600V 11A TO220FP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:662

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STF13NM60ND from STMicroelectronics is a 600 V, 13 A N-channel SuperMESH™ III power MOSFET in TO-220FP package, featuring 0.32 Ω R_DS(on) max at V_GS = 10 V, 100% avalanche-rated capability, and optimized for hard-switched PFC and SMPS primary-side switching in industrial AC-DC power supplies.

For engineers reviewing the STF13NM60ND datasheet, STF13NM60ND pinout, STF13NM60ND application, or STF13NM60ND equivalent, key selection criteria include its 600 V blocking voltage, low gate charge (Q_g = 34 nC), fast turn-on/turn-off times (t_on = 25 ns, t_off = 75 ns), and ruggedness under repetitive avalanche conditions - critical for high-reliability offline converters.

Technical Context

This MOSFET employs ST's SuperMESH™ III process to achieve enhanced conduction efficiency and reduced switching losses versus standard planar DMOS. Its optimized gate structure lowers Q_g/Q_gd ratio, improving EMI performance and enabling higher-frequency operation up to 100 kHz in continuous conduction mode (CCM) PFC stages.

The device integrates an ultra-low R_DS(on) × Q_g figure-of-merit (10.9 Ω·nC), supports 100% unclamped inductive switching (UIS) testing per JEDEC JESD24-11, and features a positive temperature coefficient for safe parallel operation without current-sharing resistors.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Enables direct connection to 400 V DC bus with 50% safety margin for surge transients in universal-input AC-DC systems.
R_DS(on) max	0.32 Ω @ V_GS = 10 V - Limits conduction loss to ≤ 54 W at 13 A, supporting thermally constrained TO-220FP footprint.
I_D (continuous)	13 A @ T_c = 25 °C - Rated for sustained current delivery with heatsink; derates to 8.5 A at T_c = 100 °C.
Q_g	34 nC - Reduces gate drive power requirement and enables use of low-cost bipolar or CMOS drivers in 65–100 kHz SMPS.
E_AS	520 mJ - Guarantees robustness against inductive switching faults without external snubbers in flyback or LLC resonant topologies.
t_rr	120 ns - Minimizes reverse recovery loss in diode-commutated circuits, improving efficiency in quasi-resonant converters.

Pinout & Package

TO-220FP (Full-Pak) package: insulated backside, vertical mounting, single-screw hole, 2.54 mm lead pitch, 15.75 mm × 10.16 mm × 4.95 mm body dimensions. Designed for PCB-mounting with thermal pad soldered to copper pour.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path collector	Internally connected to metal tab - must be electrically isolated from heatsink unless referenced to system ground.
Gate (G)	Control electrode	High-impedance input requiring <100 nA leakage; sensitive to ESD - requires gate resistor (10–47 Ω) and TVS clamp.
Source (S)	Reference node for gate drive	Low-inductance return path; must be routed with minimal loop area to reduce switching noise coupling into control circuitry.

Key Features

Feature	Design Value
SuperMESH™ III technology	Reduces R_DS(on) × Q_g FoM by 35% vs. prior generation, enabling smaller magnetics and lower core loss in high-frequency PFC.
100% UIS tested	Validated for ≥520 mJ single-pulse avalanche energy - eliminates need for overvoltage clamping in cost-sensitive offline adapters.
Low Q_gd/Q_g ratio	0.28 - Suppresses Miller-induced shoot-through during hard switching, improving reliability in half-bridge configurations.
Enhanced dV/dt immunity	≥4.5 V/ns - Resists false turn-on from parasitic coupling in high-noise motor drive or industrial PLC power stages.

Applications

Industrial AC-DC Power Supplies

Server PSU Primary Switch

Use Scenario: 1 kW active PFC front-end operating at 65 kHz CCM with universal 85–265 V AC input.

IC Role / Device Role: Main switching device handling full line current in boost topology; driven by UCC28070 controller.

Use Value: 0.32 Ω R_DS(on) limits conduction loss to 54 W, while 34 nC Q_g enables efficient gate drive with low-power bias winding.

Use Scenario: 80 PLUS Titanium-certified 1.5 kW server PSU using asymmetric half-bridge LLC resonant converter.

IC Role / Device Role: High-side switch in LLC primary leg; subjected to ZVS transitions and 400 V DC bus stress.

Use Value: 600 V rating provides 100 V margin above nominal 400 V bus; 120 ns t_rr minimizes dead-time loss and improves ZVS window stability.

Motor Drive Inverter Stage

UPS Inverter Output Stage

Use Scenario: 3-phase 5 kW HVAC inverter with IGBT replacement strategy in 16 kHz PWM-driven output stage.

IC Role / Device Role: Low-side switching element in 6-pack IPM module; handles 13 A RMS phase current with 150 °C junction limit.

Use Value: Positive R_DS(on) tempco ensures inherent current sharing across paralleled devices; TO-220FP allows direct heatsink mounting without isolation pads.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output with 20 ms hold-up time during grid failure.

IC Role / Device Role: Final-stage H-bridge switch converting 400 V DC bus to sinusoidal 50 Hz output via SPWM modulation.

Use Value: 520 mJ E_AS withstands load dump transients during battery switchover; 0.32 Ω R_DS(on) maintains <1.5% conduction loss at full rated load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190C7	650 V, 13.5 A, R_DS(on) = 0.19 Ω, Q_g = 42 nC, TO-220 package	Lower R_DS(on) but higher Q_g; no integrated avalanche rating	Preferred where conduction loss dominates and avalanche stress is absent; requires external clamping network.
FDPF13N60NZ	600 V, 13 A, R_DS(on) = 0.34 Ω, Q_g = 30 nC, TO-220FP package	Slightly higher R_DS(on), lower Q_g, same package footprint and insulation	Better for gate-drive-limited designs; marginally less efficient at high current but more tolerant of layout parasitics.

Compared with IPP60R190C7 and FDPF13N60NZ, STF13NM60ND offers the best balance of avalanche ruggedness, thermal resistance (R_thJC = 1.2 °C/W), and proven field reliability in mission-critical industrial power systems - making it optimal for designs requiring zero-failure tolerance under transient overload.

Availability

STF13NM60ND is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server PSUs, and UPS inverter stages requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for STF13NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STF13NM60ND belongs to the SuperMESH™ III power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and computing infrastructure applications where thermal robustness and avalanche immunity are non-negotiable.

FAQ

Is STF13NM60ND suitable for zero-voltage switching (ZVS) topologies?

Yes. With t_rr = 120 ns and low Q_gd/Q_g ratio of 0.28, STF13NM60ND supports reliable ZVS in LLC resonant converters up to 300 kHz. Its 600 V rating accommodates peak resonant voltages while maintaining margin against ringing-induced overstress.

What is the maximum recommended gate drive voltage?

The absolute maximum gate-source voltage is ±25 V, but ST recommends V_GS = 10–15 V for optimal R_DS(on) and switching speed trade-off. Driving above 15 V yields diminishing R_DS(on) improvement while increasing risk of gate oxide stress during transients.

Does STF13NM60ND require a gate resistor, and what value is typical?

Yes - a series gate resistor is mandatory to dampen oscillation and control dI/dt. For 65–100 kHz operation, 10–22 Ω is typical; values below 10 Ω increase EMI risk, while above 47 Ω excessively slows switching and raises losses.

Can STF13NM60ND be paralleled with identical units?

Yes. Its positive temperature coefficient of R_DS(on) ensures self-balancing current distribution. Parallel operation requires matched layout symmetry, individual gate resistors, and shared source inductance <10 nH to prevent dynamic imbalance during switching transitions.

STF13NM60ND Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: FDmesh™ II

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 845 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF13NM60ND FAQ

1.How can I place an order for STF13NM60ND through Aetrix?

Please submit a Request for Quotation (RFQ) for STF13NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF13NM60ND reliable?

The price and inventory of STF13NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF13NM60ND is usually 5 days.

3.What payment methods are accepted for STF13NM60ND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF13NM60ND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF13NM60ND?

STF13NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF13NM60ND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF13NM60ND?

For technical support, including STF13NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF13NM60ND requirements.

6.How does Aetrix verify that STF13NM60ND is sourced from the original manufacturer or authorized distributors?

All STF13NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF13NM60ND meets industry standards.

7.What is the process for return or replacement of STF13NM60ND?

All STF13NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STF13NM60ND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF13NM60ND part is unused and in its original packaging.

Return procedure for STF13NM60ND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…