Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF13NM60N-H

Name: STF13NM60N-H
Brand: STMicroelectronics
SKU: STF13NM60N-H
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STF13NM60N-H

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF13NM60N-H.pdf

Description:: MOSFET N-CH 600V 11A TO220FP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,568

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STF13NM60N-H from STMicroelectronics is an N-channel 600 V, 11 A, 0.28 Ω (typ) MDmesh™ II Power MOSFET in TO-220FP package, designed for high-efficiency switching converters operating up to 150 °C junction temperature with 100% avalanche tested ruggedness and low gate charge (30 nC).

For engineers reviewing the STF13NM60N-H datasheet, STF13NM60N-H pinout, STF13NM60N-H application, or STF13NM60N-H equivalent, key selection criteria include R_DS(on) at 10 V, unclamped inductive switching capability, dv/dt immunity (45 V/ns), and thermal resistance (5 °C/W junction-to-case) in high-power SMPS and PFC stages.

Technical Context

This device implements ST's second-generation MDmesh™ vertical structure with strip layout, delivering ultra-low on-resistance and gate charge while maintaining robust 600 V blocking capability. Its 150 °C max junction temperature and 2500 V RMS insulation withstand voltage support operation in compact, thermally constrained industrial power supplies.

The MOSFET features a fast, soft-recovery body diode (t_rr = 230 ns @ T_j = 25 °C) and low C_iss (790 pF) enabling high-frequency hard-switching up to 100 kHz. Gate input resistance of 4.7 Ω supports stable drive without external damping.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Sustains full bridge or boost converter DC bus voltages up to 400 VAC input with margin
R_DS(on) max	0.36 Ω @ V_GS = 10 V, I_D = 5.5 A - Enables <1.5 W conduction loss at 11 A continuous current
Q_g	30 nC - Reduces gate driver power requirement and switching transition time in high-frequency designs
E_AS	200 mJ - Supports reliable unclamped inductive switching in flyback or LLC resonant converters
R_thj-case	5 °C/W - Allows 25 W dissipation with ≤125 °C case-to-ambient delta, enabling heatsink-free operation below 15 W
dv/dt immunity	45 V/ns - Prevents spurious turn-on during fast voltage transients in high-side configurations
I_D (T_C = 100 °C)	6.93 A - Defines usable current derating in enclosed, convection-cooled enclosures

Pinout & Package

TO-220FP package: insulated tab, vertical mounting, single-row 3-pin configuration with integral heatsink interface. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (left)	Gate	High-impedance control terminal requiring <30 nC charge for full enhancement; sensitive to ESD
Pin 2 (center)	Drain	Internally bonded to metal tab - electrically connected to heatsink; carries full load current and high-voltage stress
Pin 3 (right)	Source	Power return path and gate reference; must be low-inductance routed to minimize switching noise coupling

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse energy handling up to 200 mJ without parameter shift or failure
Low gate charge (Q_g = 30 nC)	Reduces gate driver losses and enables use of cost-effective 1-A drivers in 65–100 kHz SMPS
Low input capacitance (C_iss = 790 pF)	Minimizes Miller effect and improves controllability during high-dv/dt transitions
ECOPACK® halogen-free construction	Meets RoHS and JEDEC J-STD-020 reflow compliance for lead-free manufacturing
Soft-recovery body diode	t_rr = 230 ns with low Q_rr (2 µC) reduces EMI and snubber losses in discontinuous conduction mode

Applications

Server PSU Primary Switch

Industrial AC-DC Front-End

Use Scenario: High-density 1U server power supply operating at 92% efficiency with 3.3/5/12 V outputs.

IC Role / Device Role / Timing Role: Main switch in active clamp forward or LLC resonant topology, switching at 100–300 kHz.

Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses, enabling >500 W/in³ power density without forced air.

Use Scenario: 1 kW industrial motor drive front-end with universal AC input (85–265 VAC) and PFC stage.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC controller with 65 kHz fixed frequency.

Use Value: Avalanche ruggedness ensures reliability under line surge and overload conditions; 150 °C rating supports sealed enclosure operation.

Solar Microinverter DC-Link

Medical Imaging Power Supply

Use Scenario: Single-phase microinverter converting PV panel output (30–60 VDC) to 230 VAC grid.

IC Role / Device Role / Timing Role: High-side switch in H-bridge inverter stage, driven by isolated gate driver.

Use Value: 2500 V isolation rating allows direct mounting to grounded heatsink without insulating pads, reducing thermal impedance by 1.2 °C/W.

Use Scenario: Compact CT scanner power module supplying kV-level X-ray tube bias with strict EMI limits.

IC Role / Device Role / Timing Role: Primary side switch in resonant high-voltage DC-DC converter with synchronous rectification.

Use Value: Soft-recovery diode minimizes voltage overshoot and radiated emissions during zero-current switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NM60ND	R_DS(on) = 0.42 Ω (higher), Q_g = 32 nC, TO-220 (non-FP) package	No insulated tab - requires isolation pad for heatsink mounting; lower thermal performance (R_thj-case = 6.2 °C/W)	Select when cost sensitivity outweighs thermal or isolation requirements and board space permits larger heatsink interface.
FDPF12N50	V_DSS = 500 V (lower), R_DS(on) = 0.44 Ω, Q_g = 27 nC, TO-220FP	Not rated for 600 V bus applications; unsuitable for 400 VAC input systems without derating	Acceptable only in 230 VAC-only designs where peak DC bus remains ≤380 V and avalanche margin is not required.

Compared with STP12NM60ND and FDPF12N50, STF13NM60N-H delivers superior conduction efficiency (28% lower R_DS(on) vs. STP12NM60ND), certified insulation for direct heatsink mounting, and guaranteed avalanche energy - critical for medical and industrial systems demanding long-term reliability under transient stress.

Availability

STF13NM60N-H is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC front-ends, and solar microinverters requiring stable component supply across multi-year production cycles.

Supply support for STF13NM60N-H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ II high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies and PFC circuits operating above 300 W.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF13NM60N-H supports 6.93 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This value reflects thermal derating due to reduced heat transfer at elevated ambient temperatures and must be used with appropriate heatsinking to maintain T_j ≤ 150 °C.

Does this MOSFET require a gate resistor for stability?

Yes - a gate resistor (typically 4.7 Ω, per Figure 16 test circuit) is recommended to dampen ringing caused by PCB trace inductance and gate input capacitance. The device's 4.7 Ω gate input resistance (Table 5) is intrinsic and insufficient alone; external series resistance ensures controlled turn-on/turn-off and prevents oscillation.

Can STF13NM60N-H replace STF10NM60N in existing designs?

Yes, with validation: STF13NM60N-H offers lower R_DS(on) (0.28 Ω vs. 0.38 Ω), higher I_D (11 A vs. 9 A), and identical TO-220FP package and pinout. However, its higher gate charge (30 nC vs. 22 nC) may increase driver losses; verify gate drive strength and switching waveform integrity before drop-in replacement.

Is the TO-220FP package lead-free and RoHS compliant?

Yes - the STF13NM60N-H meets ECOPACK® standards, defined by ST as halogen-free and fully compliant with RoHS Directive 2011/65/EU. The device is qualified for standard lead-free reflow profiles (JEDEC J-STD-020) with peak temperature up to 260 °C and is marked "H" to indicate halogen-free construction.

STF13NM60N-H Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 360mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 790 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF13NM60N-H FAQ

1.How can I place an order for STF13NM60N-H through Aetrix?

Please submit a Request for Quotation (RFQ) for STF13NM60N-H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF13NM60N-H reliable?

The price and inventory of STF13NM60N-H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF13NM60N-H is usually 5 days.

3.What payment methods are accepted for STF13NM60N-H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF13NM60N-H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF13NM60N-H?

STF13NM60N-H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF13NM60N-H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF13NM60N-H?

For technical support, including STF13NM60N-H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF13NM60N-H requirements.

6.How does Aetrix verify that STF13NM60N-H is sourced from the original manufacturer or authorized distributors?

All STF13NM60N-H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF13NM60N-H meets industry standards.

7.What is the process for return or replacement of STF13NM60N-H?

All STF13NM60N-H units undergo pre-shipment inspection (PSI). If there is an issue with STF13NM60N-H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF13NM60N-H part is unused and in its original packaging.

Return procedure for STF13NM60N-H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…