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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF150N10F7

Name: STF150N10F7
Brand: STMicroelectronics
SKU: STF150N10F7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF150N10F7

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF150N10F7.pdf

Description:: MOSFET N-CH 100V 65A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:7,950

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Product details

Overview

STF150N10F7 from STMicroelectronics is an N-channel 100 V, 65 A Power MOSFET in TO-220FP package, featuring 3.6 mΩ typical R_DS(on), 117 nC total gate charge, and 495 mJ single-pulse avalanche energy. It delivers high-current switching for DC-DC converters, motor drives, and industrial power supplies where low conduction loss and robust transient handling are critical.

For engineers reviewing the STF150N10F7 datasheet, STF150N10F7 pinout, STF150N10F7 application, or STF150N10F7 equivalent, key selection criteria include R_DS(on) at 10 V drive, Crss/Ciss ratio for EMI resilience, thermal resistance (R_thj-case = 4.29 °C/W), and unclamped inductive switching capability.

Technical Context

This device employs STripFET™ F7 trench-gate technology to minimize R_DS(on) while reducing C_iss (8115 pF) and Crss (67 pF), enabling fast switching with reduced EMI generation. Its gate threshold voltage (2.5–4.5 V) supports standard 10 V logic-level drive.

The MOSFET sustains 260 A pulsed drain current and operates across –55 °C to +175 °C junction temperature. Avalanche ruggedness is validated at 495 mJ (V_DD = 50 V, I_D = 30 A), supporting reliable operation in inductive load switching without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports 48 V and 60 V bus systems with 20 % margin for transients
R_DS(on) typ.	3.6 mΩ @ V_GS = 10 V, I_D = 55 A - Enables <1.2 W conduction loss at 65 A continuous
I_D cont. @ T_C = 25 °C	65 A - Rated for high-current output stages in industrial SMPS and UPS inverters
Q_g	117 nC - Determines gate driver power requirement and switching speed under 10 V drive
E_AS	495 mJ - Validates safe operation during unclamped inductive turn-off events
R_thj-case	4.29 °C/W - Enables 35 W dissipation with ≤150 °C case-to-junction rise at 25 °C ambient
C_rss/C_iss	67/8115 pF - Low ratio improves noise immunity and reduces Miller-induced shoot-through risk

Pinout & Package

TO-220FP package: insulated flange, vertical mounting, single-row 3-pin configuration with drain-connected tab. Flange electrically isolated from all pins; heatsinking via screw-mount flange.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to low-side return path and PCB ground plane
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <117 nC charge for full enhancement; sensitive to ESD
Pin 3 (Drain)	Power output	Internally bonded to metal flange; carries full load current and must be routed with low-inductance layout

Key Features

Feature	Design Value
Ultra-low R_DS(on)	3.6 mΩ typ. enables >97 % efficiency in 48 V/50 A DC-DC phases at 100 kHz
Low Crss/Ciss ratio	67/8115 pF = 0.0082 - suppresses dv/dt-induced false turn-on in half-bridge configurations
High avalanche energy rating	495 mJ - eliminates need for external clamping diodes in relay drivers and solenoid controls
Enhanced thermal performance	R_thj-case = 4.29 °C/W allows 35 W dissipation with minimal heatsink in TO-220FP footprint

Applications

Motor Drive Inverter

Industrial SMPS Primary Switch

Use Scenario: 3-phase BLDC inverter stage in HVAC compressors operating at 20–25 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side and low-side N-channel switch in 6-pack topology; handles 65 A peak phase current.

Use Value: 3.6 mΩ R_DS(on) limits conduction loss to <1.5 W per device at full load, reducing heatsink mass by 35 % vs. legacy FETs.

Use Scenario: Primary-side switch in 1.5 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: Main power switch subjected to 100 V bus, 55 A average current, and repetitive unclamped inductive stress.

Use Value: 495 mJ E_AS ensures no failure over 10⁶ cycles without snubber, improving system MTBF.

UPS Output Stage

EV Onboard Charger (OBC) PFC Switch

Use Scenario: Half-bridge output stage in 3 kVA line-interactive UPS delivering clean 230 VAC sine wave.

IC Role / Device Role / Timing Role: Fast-switching power switch managing bidirectional energy flow during battery backup mode.

Use Value: 70 ns t_rr and 165 nC Q_rr of body diode enable zero-voltage switching (ZVS) in synchronous rectification, cutting reverse recovery loss by 60 %.

Use Scenario: Boost switch in 6.6 kW OBC PFC front-end operating at 100 kHz with 400 V DC link.

IC Role / Device Role / Timing Role: High-efficiency, high-reliability switch exposed to 100 V transients and 175 °C junction temperatures.

Use Value: 175 °C max T_J rating and 4.29 °C/W R_thj-case support sustained 65 A operation in sealed automotive enclosures without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1407PBF	R_DS(on) = 4.8 mΩ @ 10 V; Q_g = 120 nC; E_AS = 320 mJ	Lower avalanche ruggedness; higher conduction loss at 65 A	Acceptable where transient stress is limited and thermal margin exists
IXTH120N10L2	R_DS(on) = 3.9 mΩ @ 10 V; Q_g = 105 nC; TO-247 package	Larger footprint; lower gate charge but no flange isolation	Preferred when higher peak current (>75 A) and superior thermal spreading are needed

Compared with IRF1407PBF and IXTH120N10L2, STF150N10F7 uniquely combines flange-isolated TO-220FP packaging, industry-leading 3.6 mΩ R_DS(on), and 495 mJ avalanche rating-making it optimal for space-constrained, high-reliability industrial inverters where insulation and transient robustness are non-negotiable.

Availability

STF150N10F7 is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and uninterruptible power systems requiring stable component supply and long-term manufacturing continuity.

Supply support for STF150N10F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STripFET™ F7 product line targets high-efficiency power conversion, emphasizing ultra-low R_DS(on), fast switching, and ruggedness in compact packages for next-generation SMPS, inverters, and EV infrastructure.

FAQ

Is STF150N10F7 suitable for synchronous rectification?

Yes. Its body diode exhibits 70 ns reverse recovery time and 165 nC Q_rr at 150 °C, enabling efficient synchronous rectification in LLC and phase-shifted full-bridge topologies. Gate drive must account for 2.5–4.5 V V_GS(th) variation across temperature.

What is the maximum recommended gate resistor for hard-switching at 100 kHz?

A 4.7 Ω gate resistor is validated per Figure 13 in the datasheet for 100 kHz operation, yielding 33 ns t_d(on), 57 ns t_r, 72 ns t_d(off), and 33 ns t_f. Lower values increase switching speed but risk ringing; higher values reduce EMI but raise switching losses.

Does the TO-220FP package provide electrical isolation between flange and pins?

Yes. The TO-220FP variant features an electrically insulated flange rated to 2500 V_AC for 1 minute, confirmed in ST's mechanical drawings and ECOPACK® documentation. This allows direct heatsink mounting without insulating pads in grounded-chassis designs.

Can STF150N10F7 replace STP150N10F7 in existing designs?

Yes, with identical pinout and electrical specs, but STF150N10F7 uses the flange-isolated TO-220FP package versus TO-220FP's non-isolated variant in STP150N10F7. Layout must verify flange clearance and grounding scheme compatibility before substitution.

STF150N10F7 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VII

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 65A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.2mOhm @ 55A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 117 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8115 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF150N10F7 FAQ

1.How can I place an order for STF150N10F7 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF150N10F7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF150N10F7 reliable?

The price and inventory of STF150N10F7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF150N10F7 is usually 5 days.

3.What payment methods are accepted for STF150N10F7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF150N10F7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF150N10F7?

STF150N10F7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF150N10F7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF150N10F7?

For technical support, including STF150N10F7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF150N10F7 requirements.

6.How does Aetrix verify that STF150N10F7 is sourced from the original manufacturer or authorized distributors?

All STF150N10F7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF150N10F7 meets industry standards.

7.What is the process for return or replacement of STF150N10F7?

All STF150N10F7 units undergo pre-shipment inspection (PSI). If there is an issue with STF150N10F7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF150N10F7 part is unused and in its original packaging.

Return procedure for STF150N10F7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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