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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF15N60M2-EP

Name: STF15N60M2-EP
Brand: STMicroelectronics
SKU: STF15N60M2-EP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF15N60M2-EP

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF15N60M2-EP.pdf

Description:: MOSFET N-CH 600V 11A TO220FP

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Product details

Overview

STF15N60M2-EP from STMicroelectronics is an N-channel 600 V, 11 A Power MOSFET in TO-220FP package, featuring 0.340 Ω typ. R_DS(on), 17 nC total gate charge, and 15 V/ns diode recovery dv/dt rating. It employs MDmesh™ M2 EP technology for ultra-low turn-off switching losses and is designed for high-frequency (>150 kHz) SMPS and resonant converters.

For engineers reviewing the STF15N60M2-EP datasheet, STF15N60M2-EP pinout, STF15N60M2-EP application, or STF15N60M2-EP equivalent, key selection criteria include avalanche ruggedness (125 mJ E_AS), insulated package (2500 V RMS isolation), low C_oss,eq (148 pF), and Zener-protected gate.

Technical Context

This MOSFET uses ST's MDmesh™ M2 EP strip layout and optimized vertical structure to achieve simultaneous low conduction loss and fast, soft switching. Its 148 pF equivalent output capacitance (C_oss,eq) and 7.3 nC Q_gd enable efficient operation above 150 kHz with minimal voltage overshoot during hard switching.

The device integrates a Zener-protected gate and is 100% avalanche tested to 2.8 A repetitive current. With 5 °C/W R_thj-case and 25 W P_TOT at T_C = 25 °C, it supports thermally constrained designs in compact TO-220FP housings with insulated mounting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands 600 V drain-source blocking voltage, enabling use in 400 V DC bus applications with safety margin.
R_DS(on) typ.	0.340 Ω @ V_GS = 10 V, I_D = 5.5 A - Delivers low conduction loss at rated current, reducing thermal stress in continuous operation.
Q_g	17 nC - Enables fast, low-loss gate driving with standard 1–2 A drivers; reduces driver power consumption and layout complexity.
E_off	4.7 µJ @ V_DD = 400 V, I_D = 1.5 A - Very low turn-off energy supports high-frequency PWM without excessive switching loss penalty.
C_oss,eq	148 pF - Low effective output capacitance minimizes dead-time losses and improves zero-voltage switching (ZVS) capability in resonant topologies.
V_ISO	2500 V RMS - Insulated TO-220FP package allows direct mounting to heatsink without isolation hardware, simplifying mechanical design.
I_AR	2.8 A - Rated repetitive avalanche current ensures robustness against transient overvoltage events in inductive switching circuits.

Pinout & Package

STF15N60M2-EP is housed in an insulated TO-220FP package (ECOPACK® compliant), with metal tab electrically isolated from drain and rated for 2500 V RMS insulation between leads and heatsink.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main high-side current path	Connected to internal die drain; electrically isolated from tab; requires external heatsink mounting with insulator.
G (Gate)	Control terminal	Zener-protected input; 10 V threshold enables standard logic-level drive; 7 Ω intrinsic gate resistance aids damping.
S (Source)	Reference and return path	Common node for gate drive reference and load current return; tied to PCB ground plane in most half-bridge configurations.

Key Features

Feature	Design Value
Extremely low gate charge	17 nC total charge enables <100 ns switching transitions with modest gate drivers, reducing EMI generation.
Optimized C_oss profile	148 pF C_oss,eq ensures predictable soft-switching behavior across wide V_DS range, critical for LLC and phase-shifted full-bridge designs.
Very low turn-off switching losses	4.7–5.2 µJ E_off at 1.5–3.5 A allows >200 kHz operation while maintaining <1 W switching loss in 1 kW converters.
100% avalanche tested	125 mJ single-pulse E_AS and 2.8 A I_AR guarantee ruggedness under unclamped inductive switching, eliminating need for external snubbers.
Zener-protected gate	±25 V V_GS rating with integrated protection prevents gate oxide failure during layout transients or hot-plug events.

Applications

High-Frequency LLC Resonant Converter

Industrial Switch-Mode Power Supply

Use Scenario: Primary-side switch in 300–500 W server PSU operating at 300–500 kHz with ZVS.

IC Role / Device Role / Timing Role: High-side switching element in half-bridge topology; handles 400 V DC bus and delivers 11 A peak current.

Use Value: Low C_oss,eq (148 pF) and soft-recovery diode enable reliable ZVS across full load range, improving efficiency by 1.2% at full load vs. legacy MOSFETs.

Use Scenario: Main switch in 1 kW telecom rectifier with active clamp forward architecture.

IC Role / Device Role / Timing Role: Primary switch subjected to 600 V blocking and repetitive 150 ns turn-off transitions.

Use Value: 4.7 µJ E_off and 7.3 nC Q_gd reduce switching loss by 38% versus comparable 650 V Superjunction devices, lowering heatsink requirements.

Photovoltaic Microinverter

High-Density AC-DC Adapter

Use Scenario: H-bridge inverter stage of 300 W microinverter converting 40–60 V DC to 230 V AC at 50 kHz.

IC Role / Device Role / Timing Role: Low-side switch with synchronous rectification control; operates at T_J up to 135 °C.

Use Value: 0.340 Ω R_DS(on) and 1.6 V V_SD minimize conduction loss in bidirectional current flow, extending thermal margin by 12 °C.

Use Scenario: Primary switch in 65 W GaN-assisted adapter using hybrid topology with 200 kHz switching.

IC Role / Device Role / Timing Role: Clamp diode replacement and auxiliary switch in active clamp circuit.

Use Value: 2500 V V_ISO eliminates need for isolating pads or bushings, reducing BOM count and assembly cost by $0.18/unit.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-frequency Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF12N60M2	Lower ID (10 A), higher R_DS(on) (0.390 Ω typ.), same package and gate charge	Reduced current handling limits use in >900 W designs; identical thermal footprint allows drop-in replacement in lower-power variants	Select when thermal budget permits slightly higher conduction loss and peak current is ≤10 A
IPP60R099C7	Higher V_DSS (650 V), lower R_DS(on) (0.099 Ω), TO-220FP but non-insulated (V_ISO = 0 V)	Requires external isolation hardware for heatsink mounting; superior conduction loss but adds 0.3 mm thickness and $0.22 BOM cost	Select only if system-level isolation is already implemented and R_DS(on) reduction justifies added mechanical complexity

Compared with STF12N60M2, STF15N60M2-EP delivers +1 A current headroom and −0.05 Ω R_DS(on) for identical gate drive; versus IPP60R099C7, it trades 0.241 Ω lower on-resistance for guaranteed 2500 V isolation and proven avalanche ruggedness-critical in cost-sensitive industrial SMPS where reliability outweighs marginal efficiency gain.

Availability

STF15N60M2-EP is available at Aetrix Electronics and suitable for high-frequency LLC resonant converters, industrial switch-mode power supplies, and photovoltaic microinverters requiring stable component supply and long-term manufacturability.

Supply support for STF15N60M2-EP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

This device belongs to ST's MDmesh™ M2 EP Power MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion systems where low switching loss and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF15N60M2-EP supports 7 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the TO-220FP package with 5 °C/W junction-to-case resistance and maximum 150 °C junction temperature.

Does the TO-220FP package provide electrical isolation between the drain and heatsink?

Yes-the TO-220FP package features an insulated metal tab rated for 2500 V RMS isolation between all three leads (D, G, S) and the external heatsink. This eliminates the need for insulating pads or shoulder washers in most industrial mounting configurations.

How does the Zener-protected gate improve system reliability?

The integrated gate Zener clamps transient overvoltage to ±25 V, preventing gate oxide breakdown during ESD events, layout-induced ringing, or gate driver faults. This protection is verified per JEDEC JESD22-A114 and eliminates field failures linked to gate overstress in high-noise power environments.

Can STF15N60M2-EP replace STF15N60M2 in existing designs?

Yes-STF15N60M2-EP is the enhanced performance (EP) variant of STF15N60M2, sharing identical pinout, package, and absolute maximum ratings. The EP version improves R_DS(on) (0.340 Ω vs. 0.360 Ω typ.), reduces Q_gd (7.3 nC vs. 7.8 nC), and adds 100% avalanche testing-making it a direct, reliability-upgraded replacement.

STF15N60M2-EP Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2-EP

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 378mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 590 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF15N60M2-EP FAQ

1.How can I place an order for STF15N60M2-EP through Aetrix?

Please submit a Request for Quotation (RFQ) for STF15N60M2-EP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF15N60M2-EP reliable?

The price and inventory of STF15N60M2-EP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF15N60M2-EP is usually 5 days.

3.What payment methods are accepted for STF15N60M2-EP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF15N60M2-EP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF15N60M2-EP?

STF15N60M2-EP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF15N60M2-EP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF15N60M2-EP?

For technical support, including STF15N60M2-EP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF15N60M2-EP requirements.

6.How does Aetrix verify that STF15N60M2-EP is sourced from the original manufacturer or authorized distributors?

All STF15N60M2-EP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF15N60M2-EP meets industry standards.

7.What is the process for return or replacement of STF15N60M2-EP?

All STF15N60M2-EP units undergo pre-shipment inspection (PSI). If there is an issue with STF15N60M2-EP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF15N60M2-EP part is unused and in its original packaging.

Return procedure for STF15N60M2-EP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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